LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002M3T5G S-L2N7002M3T5G N–Channel SOT–723 3 • Pb−Free Package is Available. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 1 ORDERING INFORMATION Device Marking L2N7002M3T5G S-L2N7002M3T5G 72 SOT-723 Shipping 8000 Tape & Reel N - Channel MAXIMUM RATINGS Rating 3 Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.) – – Continuous Pulse t < 10us ID ±115 mAdc IDM ±800 Gate–Source Voltage – Continuous VGS ±20 1 2 Vdc MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 Characteristic Total Device Dissipation FR–5 Board (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 150 1.2 mW mW/°C RθJA 833 °C/W TJ, Tstg –55 to +150 72 1 Gate 72 M M THERMAL CHARACTERISTICS 2 Source = Device Code = Month Code °C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. FR–5 = 1.0 x 0.75 x 0.062 in. 3. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. Rev .O 1/4 LESHAN RADIO COMPANY, LTD. L2N7002M3T5G , S-L2N7002M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 60 – – Vdc IDSS – – – – 1.0 500 µAdc Gate–Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF – – 100 nAdc Gate–Body Leakage Current, Reverse (VGS = – 20 Vdc) IGSSR – – –100 nAdc VGS(th) 1.0 1.8 2.2 Vdc ID(on) 500 – – mA – – – – 3.75 0.375 – – 4 – – 4 gFS 80 – – mmhos Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss – 17 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss – 10 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss – 2.5 5.0 pF td(on) – 7 20 ns td(off) – 11 40 ns VSD – – –1.5 Vdc IS – – –115 mAdc ISM – – –800 mAdc OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25°C TJ = 125°C ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) On–State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Static Drain–Source On–State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) VDS(on) Static Drain–Source On–State Resistance (VGS = 10 V, ID = 500 mAdc) rDS(on) (VGS = 5.0 Vdc, ID = 50 mAdc) Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) Vdc Ohms DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–Off Delay Time (V DD = 25 Vdc , ID ^ 500 mAdc, RG = 25 Ω, RL = 50 Ω, Vgen = 10 V) BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage (IS = 115 mAdc, V GS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. Rev .O 2/4 LESHAN RADIO COMPANY, LTD. L2N7002M3T5G , S-L2N7002M3T5G TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25°C 1.6 1.4 9V 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 0.8 VGS = 10 V ID, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 125°C 0.6 0.4 0.2 0 10 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -ā60 -ā20 +ā20 +ā60 T, TEMPERATURE (°C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics VGS(th), THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) Figure 1. Ohmic Region 2.0 25°C -ā55°C +ā100 Figure 3. Temperature versus Static Drain–Source On–Resistance +ā140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -ā60 -ā20 +ā20 +ā60 T, TEMPERATURE (°C) +ā100 +ā140 Figure 4. Temperature versus Gate Threshold Voltage Rev .O 3/4 LESHAN RADIO COMPANY, LTD. L2N7002M3T5G , S-L2N7002M3T5G SOT−723 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L C MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 mm Ǔ ǒinches Rev .O 4/4