KEC 2N7002K

SEMICONDUCTOR
2N7002K
TECHNICAL DATA
N Channel MOSFET
ESD Protected 2000V
INTERFACE AND SWITCHING APPLICATION.
FEATURES
ESD Protected 2000V.
E
B
L
L
High density cell design for low RDS(ON).
D
Voltage controlled small signal switch.
2
A
G
Rugged and reliable.
3
H
High saturation current capablity.
1
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
300
IDP
1200
Drain Power Dissipation (Note 2)
PD
300
Junction Temperature
Tj
150
Tstg
-55 150
Pulsed (Note 1)
Storage Temperature Range
Note 1) Pulse Width 10
, Duty Cycle
B
C
1.30+0.20/-0.15
1.30 MAX
D
0.45+0.15/-0.05
E
G
2.40+0.30/-0.20
1.90
H
J
K
L
M
N
P
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
M
V
2. GATE
3. DRAIN
mA
mW
SOT-23
1%
Note 2) Package mounted on a glass epoxy PCB(100mm2
EQUIVALENT CIRCUIT
MILLIMETERS
_ 0.20
2.93+
1. SOURCE
20
ID
Continuous
Drain Current
K
CHARACTERISTIC
J
)
C
MAXIMUM RATING (Ta=25
P
N
P
DIM
A
1mm)
D
Marking
Lot No.
G
WC
Type Name
S
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=10 A
60
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
-
-
1
A
Gate-Body Leakage, Forward
IGSSF
VGS=20V, VDS=0V
-
-
10
A
Gate-Body Leakage, Reverse
IGSSR
VGS=-20V, VDS=0V
-
-
-10
A
2009. 11. 17
Revision No : 2
1/4
2N7002K
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 3)
CHARACTERISTIC
SYMBOL
Vth
Gate Threshold Voltage
RDS(ON)
Drain-Source ON Resistance
VDS(ON)
Drain-Source ON Voltage
ID(ON)
On State Drain Current
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VDS=VGS, ID=250 A
1.1
-
2.35
V
VGS=10V, ID=500mA
-
1.2
1.8
VGS=5V, ID=50mA
-
1.5
2.1
VGS=10V, ID=500mA
-
0.6
0.9
VGS=5V, ID=50mA
-
0.075
0.105
VGS=10V, VDS= 2 VDS(ON)
500
-
-
mA
200
580
-
mS
-
760
1150
mV
MIN.
TYP.
MAX.
UNIT
-
52.1
-
-
3.9
-
-
7.7
-
V
Forward Transconductance
gFS
VDS=10V, ID=500mA
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=200mA (Note1)
Note 3) Pulse Test : Pulse Width 80
, Duty Cycle 1%
DYNAMIC CHARACTERISTICS
CHARACTERISTIC
SYMBOL
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
TEST CONDITION
VDS=25V, VGS=0V, f=1MHz
Turn-On Time
ton
VDD=30V, RL=155 , ID=190mA,
-
11.1
-
Turn-Off Time
toff
VGS=10V
-
22.5
-
Switching Time
pF
nS
SWITCHING TIME TEST CIRCUIT
ton
td(on)
VDD
td(off)
tr
90%
toff
tf
90%
RL
VIN
VOUT
D
OUTPUT
VOUT 10%
VGS
INVERTED
G
90%
50%
50%
S
INPUT
VIN 10%
PULSE WIDTH
2009. 11. 17
Revision No : 2
2/4
ID - VDS
1.5 COMMON SOURCE
DRAIN CURRENT ID (A)
Ta = 25 C
5V
10V
1.2
6V
7V
0.9
4V
0.6
0.3
VGS = 3V
0.0
0.0
1.0
2.0
3.0
4.0
5.0
DRAIN SOURCE ON - RESISTANCE RDS ( )
2N7002K
RDS(ON) - ID
6.0
COMMON SOURCE
Ta = 25 C
5.0
4.0
VGS = 3V
3.0
2.0
4V
5V
1.0
6V 7V 10V
0.0
0.1
0.2
DRAIN-SOURCE VOLTAGE VDS (V)
0.3
3.0
VGS=5V
ID=50mA
1.5
1.0
VGS=10V
ID=500mA
0.0
-100
-50
0
50
100
150
1.1
1
0.9
0.8
0.7
0.6
-100
-50
0
50
100
I S - V SD
REVERSE DRAIN CURRENT I S (A)
DRAIN CURRENT ID (A)
1.2
ID - VGS
-55 C
0.8
25 C
125 C
0.6
0.4
0.2
1
2
3
4
DRAIN-SOURCE VOLTAGE VGS (V)
2009. 11. 17
Common Source
VGS=VDS
ID=250 µA
1.3
JUNCTION TEMPERATURE Tj ( C)
COMMON SOURCE
VDS =10V
0
1.4
JUNCTION TEMPERATURE Tj ( C)
1.0
0.0
NORMALIZED GATE GATE
SOURCE THRESHOLDVOLTAGE Vth (V)
DRAIN SOURCE ON - RESISTANCE
RDS ( )
3.5
0.5
Revision No : 2
0.6
Vth - Tj
4.0
2.0
0.5
DRAIN-CURRENT ID (A)
RDS(ON) - Tj
2.5
0.4
5
150
1
VGS=1V
0.1
VGS=0V
0.01
0.0
0.3
0.6
0.9
1.2
1.5
BODY DIODE FORWARD VOLTAGE VSD (V)
3/4
2N7002K
VGS - Q g
1000
COMMON SOURCE
VDS=30V
ID=0.3A
Ta=25 C
8
CAPACITANCE C (pF)
GATE-SOURCE VOLTAGE VGS (V)
10
C - V DS
6
4
2
COMMON SOURCE
VGS =0V
f=1MHz
Ta=25 C
100
C iss
C oss
10
C rss
1
0
0
2
4
6
8
10
0
GATE CHARGE Q g (nC)
5
10
PW
10
0.1
PW =1ms
PW =10ms
PW =100ms
DC
0.001
0.1
1
10
DRAIN-SOURCE VOLTAGE V DS (V)
2009. 11. 17
Revision No : 2
100
DRAIN POWER DISSIPATION P D (mW)
DRAIN CURRENT I D (A)
Tj=150 C , Ta=25 C ,Single
Pulse,Package mounted
1 on a a glass epoxy
PCB(100mm2 1mm)
0.01
25
P D - Ta
10
0.0001
0.001
20
DRAIN-SOURCE VOLTAGE V DS (V)
SOA
0.01
15
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
4/4