MMBF170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · SOT-23 Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage A D TOP VIEW Mechanical Data · · · · · G C S D E Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K6Z Weight: 0.008 grams (approx.) B G H M K J L Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol MMBF170 Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS £ 1.0MW VDGR 60 V Gate-Source Voltage Continuous Pulsed VGSS ±20 ±40 V Drain Current (Note 1) Continuous Pulsed ID 500 800 mA Pd 225 1.80 mW mW/°C RqJA 556 K/W Tj, TSTG -55 to +150 °C Total Power Dissipation (Note 1) Derating above TA = 25°C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 70 ¾ V VGS = 0V, ID = 100mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 1.0 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS ¾ ¾ ±10 nA VGS = ±15V, VDS = 0V 3.0 V VDS = VGS, ID =-250mA VGS = 10V, ID = 200mA OFF CHARACTERISTICS (Note 2) ON CHARACTERISTICS (Note 2) VGS(th) 0.8 2.1 RDS (ON) ¾ ¾ 5.0 W gFS 80 ¾ ¾ mS Input Capacitance Ciss ¾ 22 40 pF Output Capacitance Coss ¾ 11 30 pF Reverse Transfer Capacitance Crss ¾ 2.0 5.0 pF Turn-On Delay Time tD(ON) ¾ ¾ 10 ns Turn-Off Delay Time tD(OFF) ¾ ¾ 10 ns Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 10V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50W Note:1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width £ 300ms, duty cycle £ 2%. DS30104 Rev. C-2 1 of 2 MMBF170 0.8 ID, DRAIN-SOURCE CURRENT (A) 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 0.6 Tj = 25°C RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.0 5.5V 5.0V 0.4 0.2 6 5 VGS = 5.0V 4 3 VGS = 10V 2 1 0 0 0 1 3 2 0 5 4 0.8 1.0 6 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics VGS = 10V, ID = 0.5A VGS = 5.0V, ID = 0.05A 1.0 0.5 0 0.4 0.2 -55 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs Junction Temperature DS30104 Rev. C-2 5 4 ID = 500mA ID = 50mA 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 2 of 2 MMBF170