ROHM RF05VA2STR

Data Sheet
Super Fast Recovery Diode
RF05VA2S
Series
Standard Fast Recovery
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.1
0.17±0.1
0.05
1.3±0.05
0.8 0.5
1.9±0.1
2.5±0.2
2.0
Applications
High Frequency rectification
TUMD2
Features
1)Small mold type.（TUMD2）
2)high switching speed
3)Low forward voltage
Structure
0.8±0.05
0.6±0.2
ROHM : TUMD2
0.1
dot (year week factory) + day
Construction
Silicon epitaxial planer
Taping dimensions (Unit : mm)
φ1.55±0.1
0
0.25±0.05
8.0±0.2
2.75
1.43±0.05
Absolute maximum ratings (TI=25C)
Parameter
Symbol
VRM
Repetitive peak reverse voltage
VR
Reverse voltage
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
Reverse recovery time
IR
trr
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4.0±0.1
2.8±0.05
1.75±0.1
2.0±0.05
3.5±0.05
4.0±0.1
φ1.0±0.2
0
Conditions
Direct voltage
Glass epoxy substrate mounted
60Hz half sin wave,resistive load
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
0.9±0.08
Limits
200
200
Unit
V
V
0.5
A
6
A
150
55 to 150
C
C
Conditions
Min.
Typ.
Max.
IF=0.5A
－
0.85
0.98
V
VR=200V
IF=0.5A,IR=1A,Irr=0.25×I R
－
0.01
10
μA
－
11
25
ns
1/4
Unit
2011.10 - Rev.A
Data Sheet
RF05VA2S
10
10000
Tj=150°C
1
Tj=125°C
Tj=25°C
0.1
0.01
Tj=75°C
100
Tj=75°C
10
Tj=25°C
1
0
300 400 500 600 700 800 900 1000 1100 1200 1300
0
50
100
150
200
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100
900
f=1MHz
IF=0.5A
890
FORWARD VOLTAGE : VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Tj=125°C
1000
REVERSE CURRENT: IR(nA)
FORWARD CURRENT: IF(A)
Tj=150°C
10
880
870
860
850
840
830
AVE:848.8mV
820
810
1
0
5
10
15
20
25
800
30
VF DISPERSION MAP
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
30
100
f=1MHz
VR=0V
10
AVE:1.8nA
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT : IR(nA)
VR=200V
1
25
AVE:24.3pF
20
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
30
30
1cyc
Ifsm
25
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
Data Sheet
RF05VA2S
8.3ms
20
15
10
AVE:13.7A
IF=0.5A
IR=1A
Irr=0.25×IR
25
20
15
AVE:10.2ns
10
5
5
0
0
trr DISPERSION MAP
IFSM DISPERSION MAP
100
100
8.3ms
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
IFSM
8.3ms
1cyc.
10
1
1
10
IFSM
10
1
100
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
30
15
AVE:5.9kV
5
C=200pF
R=0Ω
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
AVE:28.2kV
20
0
100
1000
25
10
time
C=100pF
R=1.5kΩ
100
Rth(j-c)
10
1
0.001
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Rth(j-a)
3/4
2011.10 - Rev.A
D.C.
0.4
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
FORWARD POWER
DISSIPATION:Pf(W)
0.35
D=0.5
0.3
half sin wave
0.25
D=0.2
0.2
0V
0.8
D=0.8
D=0.1
D=0.05
0.7
0.5
half sin wave
D=0.1
0.05
0.1
0.4
0.6
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0
0.8
Io
0A
0V
T
0.8
D=0.05
0
30
60
90
120
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
VR
t
0.9
D=t/T
VR=160V
Tj=150°C
0.4
0.2
0.2
T
D=0.5
0.1
0
t
D=0.8
0.6
D=0.2
0
VR
D.C.
0.3
0.15
Io
0A
0.9
0.45
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Data Sheet
RF05VA2S
D=t/T
VR=160V
Tj=150°C
D.C.
0.7
D=0.8
0.6
D=0.5
0.5
half sin wave
0.4
D=0.2
0.3
D=0.1
0.2
D=0.05
0.1
0
0
30
60
90
120
150
CASE TEMPERATURE:Tl(°C)
DERATING CURVE (Io-Tl)
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4/4
2011.10 - Rev.A
Notice
Notes
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R1120A