Model A150N50X4B Chip Termination 150 Watts, 50Ω Description The A150N50X4B is high performance Aluminum Nitride (AlN) chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling makes the part ideal for terminating circulators, and for use in power combiners. The termination is also RoHS compliant! General Specifications Features: • RoHS Compliant • 150 Watts • DC - 2.7 GHz • AlN Ceramic Tolerance is ±0.010”, unless otherwise specified. Designed to meet or exceed applicable portions of MIL-E-5400. All dimensions in inches. Electrical Specifications • Non-Nichrome Resistive Element Resistance Value: Power: Frequency Range: • Low VSWR Return Loss • 100% Tested Thick film AlN Ceramic Matte Tin over Nickel Barrier -55 to +200°C (see de rating chart) Resistive Element Substrate Terminal Finish Operating Temperature 50 Ohms, ± 2% 150 Watts DC – 2.7 GHz >26dB to 2.0 GHz >20dB to 2.7 GHz Specification based on unit properly installed using suggested mounting instructions and a 50 ohm nominal impedance. Specifications subject to change. Outline Drawing UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES 1 of 2 Available on Tape and Reel For Pick and Place Manufacturing. USA/Canada: Toll Free: Europe: (315) 432-8909 (800) 544-2414 +44 2392-232392 Model A150N50X4B Typical Performance: A150N50X4B A150N50X4B Power De-rating: Mounting Footprint and Procedure: *Actual performance could be limited by the solder properties of the application Mounting Footprint and Procedure: 2 of 2 USA/Canada: Toll Free: Europe: (315) 432-8909 (800) 544-2414 +44 2392-232392 Available on Tape and Reel For Pick and Place Manufacturing.