COMCHIP CEFB201-G_12

SMD Efficient Fast Recovery Rectifiers
CEFB201-G Thru. CEFB205-G
Reverse Voltage: 50 to 600 Volts
Forward Current: 2.0 Amp
RoHS Device
Features
DO-214AA (SMB)
-Ideal for surface mount applications.
-Easy pick and place.
0.185(4.70)
0.160(4.06)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.155(3.94)
0.130(3.30)
0.083(2.11)
0.075(1.91)
-Super fast recovery time for high efficient.
-Built-in strain relief.
-Low forward voltage drop.
0.220(5.59)
0.200(5.08)
Mechanical data
-Case: JEDEC DO-214AA, molded plastic.
0.012(0.31)
0.006(0.15)
0.096(2.44)
0.083(2.13)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.050(1.27)
0.030(0.76)
0.008(0.20)
0.004(0.10)
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.093 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Symbol
CEFB201-G CEFB202-G CEFB203-G CEFB204-G CEFB205-G
Units
Max. repetitive peak reverse voltage
VRRM
50
100
200
400
600
V
Max. DC blocking voltage
VDC
50
100
200
400
600
V
Max. RMS voltage
VRMS
35
70
140
280
420
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
45
35
A
Max. average forward current
IO
Max. instantaneous forward voltage at
2.0A
VF
0.875
1.1
1.25
V
Reverse recovery time
Trr
25
35
50
nS
Max. DC reverse current at TA=25
rated DC blocking voltage TA=100
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
O
C
C
O
2.0
A
IR
5.0
250
RθJL
15
TJ
150
O
C
TSTG
-55 to +150
O
C
μA
O
C/W
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm copper2 pad area.
REV:A
Page 1
QW-BE004
Comchip Technology CO., LTD.
SMD Efficient Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CEFB201-G thru CEFB205-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
100
10
CEFB201-G~203-G
CEFB204-G
1
F o r w a rd C u rren t(A)
Rever s e C urr e n t (μA )
10
O
TJ=125 C
1
TJ=75 OC
TJ=25 OC
CEFB205-G
0.1
0.01
0.1
O
TJ=25 C
Pulse width 300μS
4% duty cycle
0.01
0.001
0
20
40
60
80
100
120
0
140
0.4
0.8
1.6
1.2
2.0
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Junction Capacitance
Fig.4 Non-repetitive Forward Surge Current
200
50
Peak F or ward Surge C ur re nt A
( )
O
J u n c ti o n C apacian
t ce(p F )
100
10
TJ=25 OC
f=1MHz and applied
4VDC reverse voltage
TJ=25 C
8.3ms single half sine
wave, JEDEC method
40
30
20
10
0
2
0.1
1
10
100
1
10
100
Number of Cycles at 60Hz
Reverse Voltage (V)
Fig.6 Current Derating Curve
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
2.8
trr
10Ω
NONINDUCTIVE
Average Forward Current (A)
50Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
1Ω
NONINDUCTIVE
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
(+)
OSCILLLISCOPE
(NOTE 1)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
2.4
2.0
1.6
1.2
Single phase
Half wave 60Hz
0.8
0.4
0
0
1cm
Set time base for
50 / 10nS / cm
25
50
75
100
125
Ambient Temperature (
150
O
175
C)
REV:A
Page 2
QW-BE004
Comchip Technology CO., LTD.