COMCHIP General Purpose Silicon Rectifiers SMD Diodes Specialist 1N4001-G Thru. 1N4007-G Voltage: 50 to 1000 V Current: 1.0 A RoHS Device Features DO-41 -Low cost construction. -Fast forward voltage drop. -Low reverse leakage. -High forward surge current capability. 1.0(25.40) Min. O -High soldering temperature guarantee: 260 C/10 seconds, 0.375”(9.5mm) lead length at 5lbs(2.3kg) tension. 0.205(5.20) 0.160(4.20) Mechanical data 0.107(2.70) 0.080(2.00) -Case: transfer molded plastic, DO-41 1.0(25.40) Min. -Epoxy: UL 94V-0 rate flame retardant -Polarity: Indicated by cathode band -Lead: Plated axial lead, solderable per MIL-STD202E, method 208C 0.034(0.90) 0.028(0.70) -Mounting position: Any Dimensions in inches and (millimeter) -Weight: 0.012ounce, 0.33 grams O Electrical Characteristics (at TA=25 C unless otherwise noted) O Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. Symbol 1N4001 -G 1N4002 -G 1N4003 -G 1N 4004 -G 1N4005 -G 1N4006 -G 1N4007 -G Unit Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current 0.375"(9.5mm) Lead Length @TA=55 OC I(AV) 1.0 A Peak Forward Surge Current, 8.3mS single half sine-wave superimposed on rated load (JEDEC method) IFSM 30 A Maximum Instantaneous Forward Voltage @1.0A VF 1.1 V Parameter Maximum DC Reverse Current at Rated DC Blocking voltage per element TA=25 OC TA=100 OC Maximum Full Load Reverse Current,full cycle average 0.375”(9.5mm)lead length at TL=75 OC Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Ttemperature Range IR 5.0 μA 50 IR(AV) 30 CJ 15 μA PF O C/W RθJA 60 TJ -55 ~ +150 O C -55 ~ +150 O C TSTG NOTES: 1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. 2. Thermal Resistance from junction to terminal 6.0mm2 copper pads to each terminal. REV:A Page 1 QW-BG013 Comchip Technology CO., LTD. COMCHIP General Purpose Silicon Rectifiers SMD Diodes Specialist Rating and Characteristic Curves ( 1N4001 -G Thru. 1N4007-G ) Fig.1 Typical Forward Current Derating Curve Fig.2 Maximum. Non-Repetitive Peak Forward Surge Current 35 ΙFSM, Peak Forward Surge Current (A) I(AV), Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 Single phase Half wave, 60Hz Resistive or inductive load 0.2 30 25 20 15 10 5 0 0 0 25 50 75 100 125 TA, Ambient Temperature ( 150 O 175 1 0.1 Pulse width=300μs. 1% duty cycle O TJ=25 C 0.01 1.0 1.2 1.4 1.6 1.8 10 20 50 100 Fig.4 Typical Reverse Characteristics IR, Instantaneous Reverse Current (mA) 1.0 0.8 5 Number of Cycles at 60Hz 10 0.6 2 C) Fig.3 Typical Instantaneous Forward Characteristics IF, Instantaneous Forward Current (A) 8.3mS, single half sine-wave, JEDEC method. TJ=TJmax 2.0 10 TJ=100 OC 1.0 0.1 TJ=25 OC 0.01 0 VF, Instantaneous Forward Voltage (V) 20 40 60 80 100 120 140 Percent of Peak Reverse Voltage (%) Fig.5 Typical Junction Capacitance 100 CJ, Capacitance (pF) f=1MHz O TJ=25 C 10 10 0.1 1 10 100 VR, Reverse Voltage (V) REV:A Page 2 QW-BG013 Comchip Technology CO., LTD.