Technical Explanations

SEMiX® - Technical Explanations
SEMiX
®
IGBT Modules & Bridge Rectifier Family
Technical Explanations
Version 3.0 / October 2009
Martin May
1
Version 3.0 2009-10-14
© by SEMIKRON
SEMiX® - Technical Explanations
Content
1
Introduction ...................................................................................................................................... 3
1.1
Features ................................................................................................................................... 3
1.2
Advantages and Benefits ......................................................................................................... 4
2
Housing Sizes and Available Topologies ........................................................................................ 5
3
Chip Technologies and Product Ranges ......................................................................................... 7
3.1
Safe Operating Area for IGBTs ............................................................................................... 7
3.2
Surge Current Characteristics of CAL Diodes ......................................................................... 9
3.3
Selection Guide ....................................................................................................................... 9
4
Thermal Resistances ..................................................................................................................... 10
4.1
Measuring Thermal Resistance Rth(j-c) and Rth(c-s) .................................................................. 10
4.2
Transient Thermal Impedance ............................................................................................... 11
5
Integrated Temperature Sensor Specifications ............................................................................. 13
5.1
Electrical Characteristic ......................................................................................................... 13
6
Spring Contact System Specifications........................................................................................... 15
6.1
Spring and Contact Specifications......................................................................................... 15
6.2
PCB Specifications (Landing Pads for Springs) .................................................................... 15
6.3
Storage Conditions ................................................................................................................ 15
7
Reliability ....................................................................................................................................... 16
7.1
Standard Tests for Qualification ............................................................................................ 16
7.2
Reliability of Spring Contacts ................................................................................................. 17
8
Design Recommendations for SEMiX ........................................................................................... 18
8.1
Printed Circuit Board Design ................................................................................................. 18
8.2
Paralleling SEMiX IGBT Modules .......................................................................................... 22
8.3
DC-Link Bus Bars, Snubber Capacitors ................................................................................ 23
8.4
Thermal Management ........................................................................................................... 24
9
Mounting Instructions .................................................................................................................... 25
9.1
Preparation, Surface Specifications ...................................................................................... 25
9.2
Assembly ............................................................................................................................... 25
9.3
ESD Protection ...................................................................................................................... 29
10
Laser Marking ............................................................................................................................ 30
10.1 Laser Marking on Modules .................................................................................................... 30
10.2 Data Matrix Code ................................................................................................................... 30
11
Packing Specifications ............................................................................................................... 31
11.1 Packing Box ........................................................................................................................... 31
11.2 Marking Packing Boxes ......................................................................................................... 32
12
Type Designation System .......................................................................................................... 33
13
Figure Captions in the Datasheets ............................................................................................ 34
13.1 IGBT Modules ........................................................................................................................ 34
13.2 Thyristor/Diode and Rectifier Modules .................................................................................. 35
14
Disclaimer .................................................................................................................................. 36
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SEMiX® - Technical Explanations
1 Introduction
SEMiX was introduced as part of SEMIKRON’s new line of IGBT modules at PCIM 2003. SEMiX
modules are now available as a complete module family featuring different housing sizes and adapted
bridge rectifiers (Fig. 1-1). Thanks to its features, this product line has become a standard for new
developments.
1.1 Features
IGBT Modules
SEMiX 1
SEMiX 2
SEMiX 13
SEMiX 3
SEMiX 4
Rectifier Modules
Fig. 1-1 SEMiX family concept: IGBT modules and matching input rectifiers
The low-profile housing design of SEMiX modules offers several advantageous features:

Solder-free mounting for the driver with no additional wiring or connectors (Fig. 1-2)

Spring contacts for the auxiliary contacts

Family concept, meaning a similar package design for both input rectifiers and IGBT modules

Complete product line from IC, max = 100 A to 900 A in 600 V, 1200 V and 1700 V

Separate AC, DC terminals and control unit

17-mm-high main terminals
Fig. 1-2 SEMiX housing size 3 with SKYPER driver core and adapter board
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SEMiX® - Technical Explanations
1.2 Advantages and Benefits
The above-mentioned features allow for a compact, flat and low-inductance inverter design (see Fig.
1-3 and Fig. 1-4). The DC-link connections can be short and very low inductive, resulting in reduced
voltage overshoots. In the case of paralleled IGBT modules, even and balanced current sharing can
be achieved.
Thanks to the directly mounted driver (see Fig. 1-2) optimum IGBT control can be achieved and noise
on gate wires or loose connectors can be ruled out.
With SEMiX modules, the entire inverter design can be simplified. Furthermore, the assembly
processes involved in inverter production for the units are less complex (e.g. no manual or additional
wave soldering). As a result, quality is boosted, while the overall system costs decrease.
Fig. 1-3 Possible inverter design with SEMiX for input rectifier and inverter (concept study)
Fig. 1-4 Possible inverter design with SEMiX for input rectifier and inverter (concept study)
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SEMiX® - Technical Explanations
2 Housing Sizes and Available Topologies
SEMiX 1
84 x 62 x 17 mm³
SEMiX 2
117 x 62 x 17 mm³
SEMiX 3
150 x 62 x 17 mm³
SEMiX 4
183 x 62 x 17 mm³
SEMiX 13
138 x 62 x 17 mm³
SEMiX 33c
150 x 162 x 17 mm³
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SEMiX® - Technical Explanations
Tab. 2-1 Overview of SEMiX housing sizes and available topologies
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SEMiX® - Technical Explanations
3 Chip Technologies and Product Ranges
3.1 Safe Operating Area for IGBTs
Safe Operating Areas are not included in the datasheets. They are given as standardized figures.
These figures apply to 600 V, 1200 V and 1700 V.
Safe Operating Area
IGBT modules must not be used in linear mode.
10
IC/ICRM
SOA-SEMiX.xls
Tc ≤ 25 °C
Tj ≤ 150 °C
single pulse
tpulse =
0,1 ms
1,0 ms
10 ms
1
1/1
DC
0,1
1/10
0,01
1/100
0,001
0,001
0,01
1/100
0,1
1/10
VCE/V
10
CES
1
1/1
Fig. 3-1 Safe Operating Area (SOA)
Reverse Bias Safe Operating Area
The maximum VCES value must never be exceeded. Due to the internal stray inductance of the
module, a small voltage will be induced during switching. The maximum voltage at the terminals
VCE max, T must therefore be smaller than VCE max (see dotted line in Fig. 3-2). This value can be
calculated using the formula (3-1) given below. The value for tf(IC) can be taken from figure 7 of the
data sheets.
I  0.8 
VCEmax, T  VCES  L CE   C

 t f (IC ) 
(3-1)
SOA-SEMiX.xls
1,2/
IC,pulse
ICRM
1
Tc ≤ 25 °C
Tj ≤ 150 °C
tpulse ≤ 1 ms
0,8
0,6
0,4
0,2
0
0
0,2
0,4
0,6
0,8
1
VCE/VCES
1,2
1,4
Fig. 3-2 Reverse Bias Safe Operating Area (RBSOA)
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SEMiX® - Technical Explanations
Short Circuit Safe Operating Area
The number of short circuits must not exceed 1000. The time between short circuits must be > 1 s.
The duration time of the short circuit pulse tpsc is limited. Please refer to the maximum values for tpsc
given in the data sheet.
IC,sc
12/
IC,nom
SOA-SEMiX.xls
10
Tj ≤ 150 °C
VGE = ± 15 V
di/dt ≤ 2500 A/µs
8
6
4
2
0
0
0,2
0,4
0,6
0,8
1
VCE/VCES
1,2
1,4
Fig. 3-3 Short Circuit Safe Operating Area (SCSOA)
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SEMiX® - Technical Explanations
3.2 Surge Current Characteristics of CAL Diodes
When the CAL diode operates as a rectifier diode in an “IV-Q” application, it is necessary to know the
ratio of the permissible overload on-state current IF(OV) to the surge on-state current IFSM as a function
of the load period t and the ratio of VR / VRRM. VR denotes the reverse voltage applied between the
sinusoidal half waves. VRRM is the peak reverse voltage.
IFSM-CAL-Diode.xls
2
IF(OV)
1,8
IFSM
1,6
Applicable to sinusodial pulses (50 Hz)
1,4
0VRRM
0,5VRRM
1VRRM
1,2
1
IF
IF(OV)
0,8
0,6
0,4
1
t
10
100
ms 1000
10
20
30
40
t [ms]
Fig. 3-4 Surge overload current vs. time
3.3 Selection Guide
Selecting the right IGBT modules depends very much on the application itself. A lot of different
parameters and conditions have to be taken into account: Vin, Iin, Vout, Iout, fswitch, fout, overload, load
cycles, cooling conditions, etc. Given this huge variety of parameters, providing a simplified selection
guide is hardly feasible.
For this reason SEMIKRON’s SEMISEL calculation and simulation tool (http://semisel.semikron.com)
can be used to make the right choices for specific applications. With SEMISEL virtually any design
parameter can be modified for various input or output conditions. Different cooling conditions can be
chosen and specific design needs can be determined effectively.
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SEMiX® - Technical Explanations
4 Thermal Resistances
4.1 Measuring Thermal Resistance Rth(j-c) and Rth(c-s)
The thermal resistance is defined as given in the following equation (4-1)
R th(1-2) 
ΔT T1  T2

PV
PV
(4-1)
The data sheet values for the thermal resistances are based on measured values. As can be seen in
equation (4-1), the temperature difference ΔT has a major influence on the Rth value. As a result, the
reference points and the measurement methods will have a major influence, too.
SEMIKRON measures the Rth(j-c) and Rth(c-s) in SEMiX modules using method A shown in Fig. 4-1. This
means the reference points are as follows:
 For Rth(j-c) they are the junction of the chip (T j) and the bottom side of the module (T c), measured
directly beneath the chip via a drill hole in the heat sink. Reference point 1 in Fig. 4-1.
 For Rth(c-s) once again the bottom side of the module (T c), measured as described above. The heat
sink temperature Ts is measured on the top of the heat sink surface as close to the chip as
possible. See reference point 2 in Fig. 4-1.
2 = Reference point Ts (heat sink)
Reference point Tj
(junction), silicon chip,
hot spot
Reference point Tj
(junction), silicon chip,
hot spot
DBC substrate
Copper baseplate
2
Copper baseplate
DBC substrate
Thermal grease
Thermal grease
2 mm
1
1
2
Heat sink
1 = Reference point Tc (case)
1 = Reference point Tc (case)
Heat sink
Fig. 4-1 Method A as used for SEMiX, location of
reference points for Rth measurement
2 = Reference point Ts (heat sink)
Fig. 4-2 Method B, location of reference points for Rth
measurement
As explained above, the measurement method and the reference points have a significant influence
on the Rth value. Some competitors use method B, as shown in Fig. 4-2. The main difference is the
second reference point for the measurement of Rth(c-s). See reference point 2 in Fig. 4-2. This
reference point is very close to the bottom side of the module inside the heat sink, i.e. in a drill hole.
Due to the temperature distribution inside the heat sink (as shown in Fig. 4-3), the temperature
difference ΔT (= Tc-Ts) is very small, meaning that Rth(c-s) will be very small, too.
Fig. 4-3 shows the temperature distribution and the location of the reference points for the different
measurement methods. If equation (4-1) is taken into consideration, it is clear that R th(c-s) in method B
must be smaller. That said, the physics cannot be cheated, and the reduction in Rth(c-s) must ultimately
be added to Rth(s-a) (see Fig. 4-4), meaning that at least the thermal resistance Rth(j-a) between junction
and the ambient turns out to be the same, regardless of what measurement method is used.
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SEMiX® - Technical Explanations
100 %
Rth(j-a)
Rth(j-c)
Rth(c-s)
Rth(s-a)
Method „A“
Fig. 4-3 Thermal distribution and positions of different reference
points for Tj, Tc, Ts and Ta for the methods A and B
Method „B“
Fig. 4-4 Comparison of the resulting Rth
values for the different methods
For further information on the measurement of thermal resistances please refer to:
 M. Freyberg, U. Scheuermann, “Measuring Thermal Resistance of Power Modules “; PCIM
Europe, May, 2003
4.2 Transient Thermal Impedance
When switching on a “cold” module, the thermal resistance R th appears smaller than the static value
as given in the data sheets. This phenomenon occurs due to the internal thermal capacities of the
package (refer also to Fehler! Verweisquelle konnte nicht gefunden werden.Fig. 2-19). These
thermal capacities are “uncharged” and will be charged with the heating energy resulting from the
losses during operation. In the course of this charging process the R th value seems to increase. During
this time it is therefore called transient thermal impedance Zth. When all thermal capacities are
charged and the heating energy has to be emitted to the ambience, the transient thermal resistance
Zth has reached static data sheet value Rth.
The advantage of this behaviour is the short-term overload capability of the power module.
Zth /1,20
Rth
1,00
0,80
0,60
0,40
0,20
0,00
0,001
0,010
0,100
t [sec]
1,000
Fig. 4-5 Transient Thermal Impedance
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SEMiX® - Technical Explanations
During SEMIKRON’s module approval process the transient thermal behaviour is measured. On the
basis of this measurement mathematical model is derived, resulting in the following equation (4-2):


 t 
 t
Z th (t )  R1 1  exp     R 2 1  exp 
 1 
 2



 


(4-2)
For SEMiX modules, the coefficients R1, 1, and R2, 2 can be determined using the data sheet values
as given in Tab. 4-1.
IGBT, CAL diode
Thyristor, rectifier diode
R1
[K/W]
0.9 x Rth(j-c)
0.85 x Rth(j-c)
R2
[K/W]
0.1 x Rth(j-c)
0.15 x Rth(j-c)
1
[sec]
0.03
0.055
2
[sec]
0.0005
0.0035
Tab. 4-1 Parameters for Zth(j-c) calculation using equation (4-2)
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SEMiX® - Technical Explanations
5
Integrated Temperature Sensor Specifications
All SEMiX IGBT modules feature a temperature-dependent resistor for temperature measurement.
The resistor is soldered onto a separate DBC ceramic substrate close to the IGBT and diode chips
and reflects the actual case temperature.
Since the cooling conditions have a significant influence on the temperature distribution inside the
SEMiX module, it is necessary to evaluate the dependency between the temperatures of interest (e.g.
chip temperature) and the signal from the integrated temperature sensor.
Rectifier modules do not include temperature sensors, because rectifiers are usually chosen with
regard to pulse currents, meaning that they do not reach critical temperatures during normal operation.
A sensor would be too slow in detecting short-term overloads.
5.1 Electrical Characteristic
The temperature sensor has a nominal resistance of 5 kΩ at 25 °C and 0.493 kΩ at 100 °C. The
sensor is most accurate at 100 °C with a tolerance of ± 5 %. The measuring current should be 1 mA;
the maximum value is 3 mA.
The built-in temperature sensor in SEMiX modules is a resistor with a negative temperature coefficient
(NTC). Its characteristic is given in Fig. 5-1 and Fig. 5-2. The ohmic resistance values of the sensor
(min., typ., max.) are given as a function of temperature in Tab. 5-1.
A mathematical expression for the sensor resistance as a function of temperature R(T) is given by:

1
1  

R(T )  R100  exp B100 / 125   

 T T100  

With
R100
= 0.493 kΩ
(± 5 %)
B100/125 = 3550 K
(± 2 %)
T100
= 100 °C = 373.15 K

1
1

R(T )  0.493k  exp 3550K   
 
 T 373.15K  

200
Resistance Value [kOhm]
175
150
125
100
75
50
25
0
-50
-25
0
25
50
75
100
125
150
Temperature [°C]
Fig. 5-1 Typical characteristic of the NTC temperature sensor included in SEMiX modules
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SEMiX® - Technical Explanations
1,00
0,90
Resistance Value [kOhm]
0,80
0,70
0,60
0,50
0,40
0,30
0,20
0,10
0,00
80
90
100
110
120
130
140
150
Temperature [°C]
Fig. 5-2 NTC temperature sensor characteristic incl. tolerances
Temperature
[°C]
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
Resistance Value
minimum
[kΩ]
148.183
83.924
49.348
30.019
18.832
12.151
8.044
5.452
3.776
2.668
1.920
1.406
1.046
0.789
0.604
0.468
0.364
0.286
0.227
0.183
0.148
standard
[kΩ]
177.265
99.034
57.508
34.582
21.465
13.713
8.995
6.045
4.153
2.913
2.082
1.514
1.119
0.840
0.639
0.493
0.385
0.304
0.243
0.196
0.159
maximum
[kΩ]
211.525
116.572
66.850
39.738
24.404
15.438
10.034
6.685
4.557
3.172
2.251
1.626
1.195
0.891
0.675
0.518
0.406
0.322
0.258
0.209
0.171
Tolerance
maximum
deviation
[%]
20.2
18.5
16.2
14.9
13.7
12.6
11.6
10.6
9.7
8.9
8.1
7.4
6.8
6.1
5.6
5.0
5.5
6.0
6.5
7.0
7.4
Tab. 5-1 Resistance values and tolerance as given by the supplier
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SEMiX® - Technical Explanations
6
Spring Contact System Specifications
6.1 Spring and Contact Specifications
Rating / Specification
Material
Copper: DIN 2076-CuSn6
With silver surface: Abrasiveness 75 to
95 HV, thickness 3 to 5 µm, tarnish
protection ‘silverbrite W ATPS’– thickness
< 0.1 µm
Contact force
3 to 5 N
Maximum contact
resistance including
ageing
- 200 mΩ (current ≤ 1A)
- 25 mΩ (current > 1A)
Comment
For one spring,
tested according to IEC
600068-2-43 (10 days,
10 ppm H2S, 75 % RH,
25°C)
Tab. 6-1 SEMiX contact springs specifications
6.2 PCB Specifications (Landing Pads for Springs)
Rating / Specification
Comment
Chem. Sn
(Chemically applied)
No min. thickness
Intermetallic phases may
be contacted
HAL Sn
(Hot Air Levelling)
No min. thickness
Intermetallic phases may
be contacted
NiAu
Ni ≥ 3µm, Au ≥ 20nm
(Electro-less nickel, immersion gold)
Tight Ni diffusion barrier
required
SnPb
No min. thickness
Intermetallic phases may
be contacted
Tab. 6-2 Specifications for the surface metallization of landing pads for SEMiX contact springs
6.3 Storage Conditions
Rating / Specification
Comment
Unassembled
20 000 h / 60 °C 95% RH
Assembled
20 000 h / 60 °C 95% RH
After extreme humidity
the reverse current limits
may be exceeded but do
not degrade the
performance of the
SEMiX
Tab. 6-3 Storage conditions for SEMiX modules with silver-plated contact springs
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SEMiX® - Technical Explanations
7 Reliability
7.1 Standard Tests for Qualification
The objectives of the test programme (refer to Tab. 7-1) are:
1. To ensure general product quality and reliability.
2. To evaluate design limits by performing stress tests under a variety of test conditions.
3. To ensure the consistency and predictability of the production processes.
4. To appraise process and design changes with regard to their impact on reliability.
Reliability Test
Standard Test Conditions for
MOS / IGBT Products:
Diode / Thyristor Products:
High Temperature Reverse Bias
(HTRB)
IEC 60747
1000 h, 95% VDSmax/VCEmax,
125°C ≤ Tc ≤ 145°C
1000 h, DC,
66% of voltage class,
105°C ≤ Tc ≤ 120°C
High Temperature Gate Bias
(HTGB)
IEC 60747
1000 h,
VGSmax/VGEmax,
Tvjmax
not applicable
High Humidity High Temperature
Reverse Bias
(THB)
IEC 60068-2-67
1000 h, 85°C, 85% RH,
VDS/VCE = 80%,
VDSmax/VCEmax, max. 80V,
VGE = 0V
1000 h, 85°C, 85% RH,
VD/VR = 80% VDmax/VRmax,
max. 80V
High Temperature Storage
(HTS)
IEC 60068-2-2
1000 h, Tstg max
1000 h, Tstg max
Low Temperature Storage
(LTS)
IEC 60068-2-1
1000 h, Tstg min
1000 h, Tstg min
Thermal Cycling
(TC)
IEC 60068-2-14 Test Na
100 cycles,
Tstg max – Tstg min
25 cycles
Tstg max – Tstg min
Power Cycling
(PC)
IEC 60749-34
20.000 load cycles,
ΔTj = 100 K
10.000 load cycles
ΔTj = 100 K
Sinusoidal sweep, 5g,
2 h per axis (x, y, z)
Sinusoidal sweep, 5g,
2 h per axis (x, y, z)
Half sine pulse, 30g, 3 times
each direction (x, y, z)
Half sine pulse, 30g, 3 times
each direction (x, y, z)
Vibration
IEC 60068-2-6 Test Fc
Mechanical Shock
IEC 60068-2-27 Test Ea
Tab. 7-1 SEMIKRON standard tests for product qualification
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SEMiX® - Technical Explanations
7.2 Reliability of Spring Contacts
The SEMiX spring contact for the auxiliaries is a solder-free contact. It can therefore be compared with
other solder-free contacts such as screw terminals or plug connectors. Fig. 7-1 shows these
“connections” for comparison.
Screwed main terminals
Plug connectors
Spring contacts
pressure force
typically 50 N/mm²
pressure force
typically 10 N/mm²
pressure force
typically 20 - 100 N/mm²
Fig. 7-1 Comparison of non-soldered electrical connections
The surface materials used for the spring contacts as given in Tab. 6-1 and Tab. 6-2 (silver-plated
spring and, for example, tin surface for PCB landing pads) are based on “state of the art” knowledge
as gained from long-term experience with plug connectors and SEMIKRON’s long-term experience
with spring connections. Compared to a plug connector, the spring contact has a much higher
pressure and contact force, which accounts for the even better reliability of this connection.
To verify this reliability, several harsh tests were performed on the spring contacts: “Temperature
Cycling”, “Temperature Shock”, “Fretting Corrosion” (= “Micro Vibration”), “Electromigration”, and a
corrosive atmosphere test in accordance with IEC 60068-2-43:
 Atmosphere:
10 ppm H2S

Temperature:

Relative humidity: 75 %

Volume flow:
> volume x 3 per hour

Duration:
10 days
25 °C
 No current load during storage
All of these tests were passed successfully and demonstrated the outstanding reliability of
SEMIKRON’s spring contacts.
It goes without saying that SEMiX modules passed all SEMIKRON standard reliability tests as given in
Tab. 7-1.
For further information on the reliability of spring contacts please refer to:
 F. Lang, Dr. U. Scheuermann, “Reliability of spring pressure contacts under environmental stress”,
Proc. Microelectronics Reliability Volume 47, Issues 9-11, September-November 2007, (18th
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis)
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SEMiX® - Technical Explanations
8 Design Recommendations for SEMiX
The following recommendations are hints only and do not constitute a complete set of design rules.
The responsibility for proper design remains with the user of the SEMiX modules. SEMIKRON
recommends using SKYPER or SKYPER PRO drivers. Detailed information on this state-of-the-art
driver core can be found on the SEMIKRON website at http://www.semikron.com/.
8.1 Printed Circuit Board Design
8.1.1 PCB Specifications
Recommendations for the printed circuit board:

“FR 4” material can be used as a material for the printed circuit board.

The thickness of copper layers should be compliant with IEC 326-3.

The landing pads must not contain plated-through holes (“VIAs”) to prevent any deterioration in
contact. In the remaining area VIAs can be used as desired.

The landing pads for the auxiliary contacts must have a diameter of Ø = 3.5 mm ± 0.2 mm.

As stated in chapter 6.2, pure tin (Sn) is an approved interface for use with SEMiX spring contacts.
Sufficient plating thickness must be guaranteed in accordance with the PCB manufacturing
process. The tin surface is normally applied to the PCB chemically or in a hot-air levelling process.
A second approved surface for the landing pads is electro-less nickel with a final immersion gold
layer (Ni + Au).
Not recommended for use are boards with “organic solder ability preservative” (OSP) passivation,
because OSP is not suitable for guaranteeing long-term corrosion-free contact. The OSP
passivation disappears during soldering or after approximately 6 months of storage.

During the solder processes the landing pads for SEMiX spring contacts need to be covered and
protected from contamination. This is particularly crucial for wave soldering. No residue of the
cover material must be left on the landing pads, as this could lead to deterioration of the electrical
contact in the long term.

If SEMiX is used with a PCB for the main DC and AC currents, i.e. a PCB will be screwed to the
main terminals (Fig. 8-1), it is necessary to use “press-in bushes” here (in accordance with
EN 50178 - A7.1.8.5). These “press-in bushes” must be able to permanently withstand the forces
that occur from mounting, as described in chapter 9.2.3.
Fig. 8-1 Mounting of PCB on main terminals
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SEMiX® - Technical Explanations
8.1.2 Gate and Emitter Connections
Inside a SEMiX module, substrates with IGBT dice are paralleled as shown in Fehler! Verweisquelle
konnte nicht gefunden werden.Fig. 2-1. The main terminals are already connected and paralleled
inside the module. The auxiliary terminals for gate and emitter are freely accessible for every single
IGBT. On account of this feature, every single chip can be controlled and the switching behaviour of
the entire module can be optimised. This is advantageous in individual use as well as in parallel use of
SEMiX IGBT modules.
Examples of PCB layouts can be found on the SEMIKRON website at http://www.semikron.com/.
Please refer to: “Products”  “Electronics”  “Evaluations Boards”.
The gate contacts are not connected internally in any of the SEMiX modules. For this reason, all of the
gates have to be connected via the control board.
To achieve optimum and smooth switching behaviour for all paralleled IGBT chips, it is necessary to
ensure gate signals decoupling. To achieve this, every single gate needs its own gate resistor R G,x
(≥ 2 Ω), as shown in Fig. 8-2.
The integrated gate resistors on the IGBT chips of the “126” product line are able to perform
acceptable decoupling. Even in these cases, the circuit shown in Fig. 8-2 offers advantages.
The different SEMiX IGBT modules display different spring pin layouts. For the different SEMiX
product lines not all possible emitter spring positions are equipped with springs. (Please refer to the
Pin Out drawings in the data sheet for details). Inside, the emitters are connected and coupling inside
the module via the main connections influences the switching behaviour of the individual paralleled
chips. All emitter springs must be connected via the control board, because only then good switching
behaviour can be ensured.
In the “12E4” product line all emitter positions are equipped with springs. In Fig. 8-2 resistors RE,x
(≥ 0.5 Ω) at every emitter contact can be seen. These resistors are necessary to ensure homogeneous
switching of the paralleled IGBTs inside the module. Additionally, these resistors dampen cross
currents in the network resulting from the main and the auxiliary emitter paralleling.
The additional Schottky diode (100 V, 1 A) parallel to RE,x ensures safe turn-off of high currents (e.g. in
the event of a short-circuit).
To achieve similar parasitic inductances and homogeneous switching behaviour, the conductor
lengths form the supply point to the individual gate and emitter connections should be identical for all
paralleled IGBTs.
C
RG,1
RG,2
RG,n
RE,1
RE,2
RE,n
DE,1
DE,2
DE,n
RGon,main
Gon
RGoff,main
Goff
E
E
Fig. 8-2 Circuit with RG,x and RE,x for signal decoupling.
If the data sheet values should be measured with the circuit shown in Fig. 8-2, the values for RGon,main,
RGoff,main, RG,x and RE,x are given under “Remarks”.
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SEMiX® - Technical Explanations
8.1.3 Data Sheet Values for RG
The data sheet value for the gate resistors RG,on and RG,off refers to a resistor between the driver and
the module, as shown in Fig. 8-3. With regard to Fig. 8-2, RG,on and RG,off are each the sum of all
parallel and serial connected resistors given in the equations (8-1) and (8-2).
IGBT Driver
RG,on
Gon
RG,off
Goff
E
Fig. 8-3 How to understand the value for RG as given in the data sheets
RG,on  RGon,main 
1
1
1
1


RG,1  RE,1 RG,2  RE,2
RG,n  RE,n
RG,off  RGoff,main 
1
1
1
1


RG,1  RE,1 RG,2  RE,2
RG,n  RE,n
(8-1)
(8-2)
The RG value given in the data sheet is determined under laboratory conditions, taking into account
optimum losses and short-circuit capabilities without any snubber circuit. In the final application fine
tuning of the resistor network and further optimisation are possible and recommended. This might
include the introduction of different RG,on and RG,off. A further possible optimisation possibility is the use
of an additional resistor for short-circuit turn-off.
Nowadays, most IGBT chips have an integrated gate resistor (refer to Fig. 8-4). Since this resistor,
and hence its influence on the switching behaviour, cannot be modified, it is not taken into regard
when determining the values for RG,on and RG,off. To calculate the necessary driver output power this
value is necessary, which is why RG,int is given in the data sheet as a separate value. RG,int given in the
data sheet is already the sum of the paralleled RGint,x inside the SEMiX module.
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SEMiX® - Technical Explanations
C
RG,x
RGint,x
RGon,main
Gon
RGoff,main
RE,x
Goff
DE,x
E
E
Fig. 8-4 How to understand the value for RG,int given in the data sheets
8.1.4 Gate Clamping
To ensure that the gate voltage VGE does not exceed the maximum value as stated in the data sheet,
the use of an appropriate gate clamping circuit (e.g. two anti-serial Z-diodes DGE, VZ = 16 V, as shown
in Fig. 8-5) is recommended. This circuit has to be placed as close to the auxiliary contacts as
possible.
It is necessary to ensure that the IGBT is always in a defined state, especially in cases where the
driver is not able to deliver a defined gate voltage VGE. A suitable solution to this problem is to use a
resistor between gate and emitter RGE (≈ 20 kΩ).
This circuit is meant as an addition to the circuit shown in Fig. 8-2
RGE
DGE
Fig. 8-5 Gate clamping circuit
8.1.5 General Design Rules
The following general design rules should be taken into account when developing an IGBT driver
circuit:
 To suppress interference in the gate signals, magnetic coupling of any kind between the main
current and the gate circuits has to be avoided. This can be achieved, for example, by using short
gate and emitter connections, whose tracks should be led parallel and very close to each other,
i.e. “no open loops”. Furthermore, the tracks should be in line with the main magnetic field = 90°
to the main current flow IC.

IGBT modules need to be turned off by a negative gate voltage VGEoff. Otherwise unwanted switchon via Miller capacitance Cres may occur.

For short-circuit switch-off, a soft-switch-off circuit in the gate drive circuit (e.g. increased R Goff) is
recommended to decrease the voltage overshoots in this particular case. SEMIKRON’s SKYPER
PRO offers this feature.
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8.2 Paralleling SEMiX IGBT Modules
When paralleling SEMiX IGBT modules it is necessary to ensure a gate signal decoupling as well as
homogeneous and low inductance AC and DC connections.
To get the maximum power out of the modules thermal management should be optimised. For more
details on this please refer to chapter 8.4.
8.2.1 Paralleling Gate and Emitter Connections
If paralleled IGBT modules are used, it follows that the IGBT chips are also paralleled. Consequently,
control signal decoupling (as described in chapter 8.1.2) is needed and the circuit as given in Fig. 8-2
should be continued. This leads to a circuit as shown in Fig. 8-6.
Paralleled IGBT modules must be controlled by one driver, also shown in Fig. 8-6. If a separate driver
is used for every paralleled module it is not possible to ensure that all of the IGBTs switch
simultaneously, meaning that the current sharing between these modules will not be even.
Modul n
IGBT Driver
Gon
Goff
E
Modul n+1
Fig. 8-6 Principle gate-control circuit for paralleled SEMiX IGBT modules
8.2.2 Paralleling Main Terminals
For optimum current sharing all parasitic stray inductances have to be the same for every module. The
same loop length for all connections is a good indicator of the same inductance. Fig. 8-7 shows an
optimised AC connection: the length from all module terminals to the output is identical and all
terminals are shorted very close to the module, keeping them on the same voltage potential.
The same rules apply to the DC connection. In this case, a further important point is that the point of
supply from the rectifier should be central and not from one side. This ensures very similar stray
inductances at the DC terminals, too.
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SEMiX® - Technical Explanations
Note: an additional mechanical support is recommended to prevent mechanical overloading of the
terminals – also refer to chapter 9.2.3
supporting
poles
Fig. 8-7 Paralleled SEMiX with low-inductance DC-link and symmetric AC-link for optimised current sharing
8.3 DC-Link Bus Bars, Snubber Capacitors
Due to stray inductances in the DC link, voltage overshoots as shown in Fig. 8-8 occur during IGBT
switch-off (caused by the energy which is stored in the stray inductances). These voltage overshoots
may destroy the IGBT module because they are added to the DC-link voltage and may lead to VCE >
VCES.
First of all, the stray inductances have to be reduced to the lowest possible limit. This includes lowinductance DC-link design as well as the use of low-inductance DC-link capacitors. The use of
snubber capacitors with a very low stray inductance, low Equivalent Series Resistance (ESR) and a
high “IR” Ripple Current Capability is recommended.
IGBT-switch-off.xls
VCE
∆V1
ΔV22 
∆V2
VCC
ΔV1  L stray  snubber  di C /dt
Lstray DCbus  iC2
Csnubber
iC
diC/dt
= operating current
= during switch-off
VCC
= DC-link voltage
0
0
t
Fig. 8-8 Voltage overshoots caused by parasitic inductances
Furthermore, a pulse capacitor (see Fig. 8-9 and Fig. 8-10) should be placed between the +/- DC
terminals of the SEMiX as a snubber. This snubber works as a low-pass filter and “absorbs” the
voltage overshoot.
Typical values for these capacitors are from 0.1 µF to 1.0 µF. The choice of the right snubber should
be determined by proper measurements.
© by SEMIKRON
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Recommended snubber capacitor
Non-recommended snubber capacitor, due to
too high stray inductance
Fig. 8-9 SEMiX inverter with snubber capacitors
mounted directly at the +/- DC main terminals
Fig. 8-10 Different snubber capacitors
8.4 Thermal Management
Optimum positioning of SEMiX modules on the heat sink can help to improve thermal management
significantly. Using three SEMiX half bridges with between 20 mm and 30 mm clearance between the
modules (Fig. 8-12) reduces the thermal resistance by approximately 15 % compared to the Rth of a
six-pack in a SEMiX 33c case (Fig. 8-11).
This decrease in thermal resistance results directly in a higher maximum output current I C.
Fig. 8-11 SEMiX “33c” six-pack module
24
Fig. 8-12 3 x SEMiX “3” module for optimised thermal
management
Version 3.0 2009-10-14
© by SEMIKRON
SEMiX® - Technical Explanations
9
Mounting Instructions
9.1 Preparation, Surface Specifications
To obtain maximum thermal conductivity the underside of the module must be free from grease and
particles. Furthermore, to ensure long-term reliable electrical contacts the contact springs have to be
kept clean at all times and should never be touched by hand.
The heat sink must fulfil the following specifications:
 50 µm per 100 mm
Heat sink
Rz  10 µm
> 10 µm
Fig. 9-1Heat sink surface specifications

The heat sink must be free from grease and particles

Unevenness of heat sink mounting area must be  50 µm per 100 mm (DIN EN ISO 1101)

Roughness “Rz”  10 µm (DIN EN ISO 4287)

No steps > 10 µm (DIN EN ISO 4287)
9.2 Assembly
9.2.1 Applying Thermal Paste
A thin layer of thermal paste has to be applied onto the heat sink surface or the underside of the
module. A layer thickness of 50 µm – 100 µm is recommended for silicone paste P12 from WACKER
CHEMIE or silicone-free paste HTC from ELECTROLUBE.
The thickness of the layer can be determined using a measurement gauge as shown in Fig. 9-2.
SEMIKRON recommends screen printing to apply thermal paste. In certain cases a hard rubber roll
might be suitable for the application of thermal paste.
Supplier:
ELCOMETER Instruments GmbH
Ulmer Strasse 68
D-73431 Aalen
Germany
phone: +49-7361-52806-0
web: www.elcometer.de
Fig. 9-2 Wet Film Thickness Gauge 5 – 150 µm
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SEMiX® - Technical Explanations
9.2.2 Mounting a SEMiX module to the Heat Sink
The SEMiX has to be placed on the appropriate heat sink area. Then the screws have to be pretightened with max. 1.0 Nm. Finally, the mounting torque Ms (as given in the data sheets) has to be
applied. During the assembly process the thermal paste shall spread evenly, ensuring that good and
homogeneous thermal contact is achieved.
SEMIKRON recommends using the following type of screw:
 M5 - 8.8
 Strength of screw: 8.8
= Tensile strength
- Rm = 800 N / mm²
= Yield point
- Re = 640 N / mm²
 The mounting torque Ms has to be between min. 3.0 Nm and max. 5.0 Nm, respectively
4.0 Nm ± 25% (unless otherwise specified in the data sheet)
 To comply with the creepage and clearance distances, the height of the screw and washer must
not exceed 6 mm + 1 mm. Refer also to Fig. 9-3.
Total height ≤ 6 mm + 1 mm
Fig. 9-3 Maximum height of screw plus washer
For modules with four screws the screws must be assembled in diagonal (crosswise) order. For sixpack modules in the “SEMiX 33c” case the screws have to be assembled in the order described in Fig.
9-4.
7
1
3
5
6
4
2
8
Fig. 9-4 Assembly order of screws for “SEMiX 33c” case (for assembly to the heat sink)
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SEMiX® - Technical Explanations
9.2.3 Mounting to the Main Terminals of SEMiX
Since SEMiX is a power-electric module and not part of the mechanical construction, the maximum
mechanical forces on the main terminals as given in Fig. 9-5 must not be exceeded throughout the
entire assembly procedure.
For the DC-link connection it is better to apply a slight pressure force in the –Z direction rather than
pull forces in the +Z direction. In addition, the SEMiX module is not meant to support the DC-link,
which is why additional mechanical components have to be arranged. Mechanical support is also
needed for the AC-connection (e.g. motor cables) in order to keep mechanical forces and unnecessary
vibration stress away from the module.
F+ Z ≤ 100 N
F± Y ≤ 100 N
F± X ≤ 100 N
F- Z ≤ 500 N
Fig. 9-5 Maximum forces at the main terminals
SEMIKRON recommends using the following type of screw:
 M6 - 8.8
 Strength of screw: 8.8
= Tensile strength
- Rm = 800 N / mm²
= Yield point
- Re = 640 N / mm²
 The depth of the screw in the module has to be between min. 6.5 mm and max. 10.0 mm.
 The mounting torque Mt has to be between min. 2.5 Nm and max. 5.0 Nm, respectively
3.75 Nm ± 30% (unless otherwise specified in the data sheet).
Internal paralleling of AC-Terminals
Inside the SEMiX module the two AC-terminals are paralleled as shown in Fig. 9-6. This means it is
not necessary to connect both terminals. Even with just one screw at the terminal the maximum
terminal current It(RMS) as given in the data sheets can be achieved.
Fig. 9-6 Detail: AC terminal of SEMiX
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SEMiX® - Technical Explanations
9.2.4 Mounting the Printed Circuit Board to the SEMiX
Mounting domes /
Screw ducts
Guiding pins
Fig. 9-7 SEMiX mounting domes and guiding pins
SEMIKRON recommends to use the following types of EJOT self-tapping screws (with A2F surface;
www.ejot.de) with an automated screw driver (see also 9.2.5 Automated Screw Driver) at the defined
mounting torques to assemble the printed circuit board on SEMiX modules:
housing material
Makrolon (PC +
20% glass fibre)
Crastin (PBT +
30% glass fibre)
housing type
SEMiX 2
SEMiX 3
SEMiX 4
SEMiX 4s
SEMiX 13
SEMiX 33c
SEMiX 1s
SEMiX 1R
SEMiX 2s
SEMiX 2R
SEMiX 3s
mounting torque [Nm]
EJOT DELTA PT EJOT PT 25x10
25x10 TX8
TX6
------------0.60 ± 0.10
0.60 ± 0.10
0.60 ± 0.10
0.60 ± 0.10
0.60 ± 0.10
0.60 ± 0.10
0.45 ± 0.10
0.40 ± 0.10
0.45 ± 0.10
0.40 ± 0.10
0.45 ± 0.10
0.40 ± 0.10
0.45 ± 0.10
0.40 ± 0.10
0.45 ± 0.10
0.40 ± 0.10
EJOT DELTA PT
25x8 TX8P
0.75 ± 0.10
0.75 ± 0.10
0.75 ± 0.10
0.55 ± 0.10
0.55 ± 0.10
0.55 ± 0.10
0.40 ± 0.10
0.40 ± 0.10
0.40 ± 0.10
0.40 ± 0.10
0.40 ± 0.10
Tab. 9-1 Torques for different screw types to mount a printed circuit board on SEMiX
The depth of the screw in the module has to be between min. 6.0 mm and max. 8.5 mm. Please refer
to the data sheet drawings for the detailed depth of the screw ducts.
The number of times the driver may be assembled and disassembled depends very much on the
screw surface and mounting torque. Under the aforementioned conditions, a driver can normally be
assembled and disassembled three times.
The “SEMiX 3s” housing has 7 mounting domes (Fig. 9-7): four domes at the corners, one in the
centre and two additional domes at the edges of the module. These two additional domes are meant
for better resistance to shock and vibration. The use of these domes is optional.
For all other SEMiX modules it is necessary to use all available mounting domes to ensure a reliable
connection between the contact springs and the PCB.
For the “SEMiX 33c” case (Fig. 9-4), the auxiliary contacts have to be soldered. During the solder
process a maximum soldering temperature T solder = 265 °C and a maximum soldering time
tsolder = 10 sec must not be exceeded. For reasons of ESD protection, all soldering tools (e.g. soldering
iron) have to be conductive grounded (refer also to chapter 9.3). Wave soldering is a valid soldering
process in this context.
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SEMiX® - Technical Explanations
Since the electrical connections of SEMiX are made using spring contacts (SEMiX 33c has spring
contacts inside), it is necessary to mount the module onto the heat sink (or a similar plate) before
performing any electrical test. This also applies to any kind of incoming inspection.
9.2.5 Automated Screw Driver
The use of torque wrenches with automatic release is strongly recommended. These should be
calibrated regularly.
For power screw drivers it is recommend to use an electric power screw driver. With pneumatic
systems, the behaviour of the clutch can lead to a shock and a torque overshoot which would damage
the SEMiX module.
The screwing speed has to be limited to a maximum speed of 300 rpm to gain the torques listed in
Tab. 9-1.
9.3 ESD Protection
SEMiX IGBT modules are sensitive to electrostatic discharge, because discharge of this kind can
damage or destroy the sensitive MOS structure of the gate. All SEMiX modules are ESD protected in
the shipment box by conductive plastic trays.
When handling and assembling the modules it is recommended to wear a conductive grounded
wristlet and to use a conductive grounded workplace. All staff should be suitably trained for correct
ESD handling.
29
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SEMiX® - Technical Explanations
10 Laser Marking
10.1 Laser Marking on Modules
All SEMiX modules are laser marked. The marking contains the following items (see Fig. 10-1):
1
2
3
4
5
XXXX
6
7
Fig. 10-1 Typical laser marking of SEMiX module
1
2
3
4
5
6
7
®
SEMIKRON logo, with product line designation SEMiX
UL logo, SEMiX is UL recognised, file name: E63532
internal tracking number (optional)
Circuit diagram
Data Matrix Code (refer also to chapter 10.2)
Type designation, for details refer to chapter 12 “Type Designation System”
Date code – 5 digits: YYWWL (YearYearWeekWeekLot; Lot of same type per week,
counting starts with 0)
The date code might be followed by
 “R” to indicate that the module complies with the RoHS directive

“E” for engineering sample
Additionally SEMiX modules may have an internal tracking number and an internal Data Matrix Code
located on the reverse module side of the above shown laser marking.
10.2 Data Matrix Code
The Data Matrix Code is described as follows:
 Type:
EEC 200

Standard:
ISO / IEC 16022

Cell size:
0.33 mm

Field size:
24 x 24

Dimensions:
8 x 8 mm plus a guard zone of 1 mm (circulating)

The following data is coded:
1
2
SEMiX503GB126HDs
1
2
3
4
5
6
16
1
10
12
1
1
digits
digit
digits
digits
digit
digit
3
4
27160012
6DE020381201
type designation
blank
part number
production tracking number
blank
measurement number
5
7
8
9
10
11
1
1
4
1
5
6
7
0
1
digit
digit
digits
digit
digits
8
9
0001
10
11
06130
line identifier (production)
blank
continuous number
blank
date code
Total: 53 digits
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SEMiX® - Technical Explanations
11 Packing Specifications
11.1 Packing Box
Standard packing boxes for SEMiX modules:
Fig. 11-1 Cardboard box with SEMiX in transparent ESD tray; dimensions: 350 x 280 x 50 mm³ (l x w x h)
Quantities per package SEMiX 1s
SEMiX 2s
SEMiX 3s
SEMiX 4s
SEMiX 13s
SEMiX 33c
Weight per package
≤ 2.5 kg
Bill of materials
Boxes:
Trays:
31
8 pcs
6 pcs
6 pcs
4 pcs
4 pcs
2 pcs
Paper (cardboard)
ASK-PET/56 (not electrically chargeable)
Version 3.0 2009-10-14
© by SEMIKRON
SEMiX® - Technical Explanations
11.2 Marking Packing Boxes
All SEMiX packing boxes are marked with a sticker label.
This label is placed on the packing box as shown in Fig. 11-2:
Fig. 11-2: Place for label on SEMiX packing boxes
The label contains the following items (see Fig. 11-3)
1
4
2
5
3
6
7
Fig. 11-3 Label on SEMiX packing boxes
1
SEMIKRON Logo
2
“Dat. Cd:”
3
4
“Menge:”
SEMiX type designation
5
“Au.-Nr :”
6
“Id.-Nr:”
7
ESD sign
Bar Code:
 Standard:
 Format:
32
Date code – 5 digits: YYMML (L=Lot of same type per week)
Suffix “R” stands for “RoHS compliant”
Quantity of SEMiX modules inside the box – also as bar code
Order Confirmation Number / Item Number on Order
Confirmation
SEMIKRON part number – also as bar code
SEMiX IGBT modules are sensitive to electrostatic discharge.
Remove the ESD package and handle the modules only if the
environment is guaranteed to be ESD proof.
EEC 200
19/9
Version 3.0 2009-10-14
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SEMiX® - Technical Explanations
12 Type Designation System
1
2
3
4
SEMiX
45
2
GB
5
6
12 6
7
HDs
1 SEMiX: Product name
(For product lines “126”, “12E4”, “176”)
Nominal chip current IC,nom /10
(For product line “066”)
Rated output current IFAV, IFAV, ID /10 (For rectifier modules)
2 Rated output current IC /10
3 Housing size
1
2
3
4
=
=
=
=
1, 1s, 13
2, 2s
3, 3s, 33c
4, 4s
4 Circuit specification (examples)
GB
GAL
GAR
GD
=
=
=
=
IGBT half bridge
IGBT low side chopper
IGBT high side chopper
3 ~ IGBT inverter, “six-pack”
KD
KH
KT
D
DH
=
=
=
=
=
Diode rectifier half bridge
Half controlled rectifier half bridge
Controlled rectifier half bridge
3 ~ rectifier bridge not controlled
3 ~ rectifier bridge half controlled
5 Voltage class
06
12
16
17
=
=
=
=
600 V
1200 V
1600 V (rectifier only)
1700 V
6 IGBT chip technology
6
E4
=
=
Trench IGBT3 (600 V, 1200V and 1700 V)
Trench IGBT4 (1200 V)
7 Appendix (optional)
D
HD
s
c
v1, v2,…
33
=
=
=
=
=
CAL Diode
CAL HD Diode
Spring pin version of housing
Six-pack comparable with competitors
Exclusive, customised special version
Version 3.0 2009-10-14
© by SEMIKRON
SEMiX® - Technical Explanations
13 Figure Captions in the Datasheets
13.1 IGBT Modules
Fig. 1
Collector current IC as a function of the collector- emitter voltage VCE (typical output
characteristics) for Tj = 25 °C and Tj = 125 °C, Parameter: Gate-emitter voltage VGE;
Values at terminal level, including RCC´ + EE´
Fig. 2
Maximum rated continuous DC collector current IC as a function of the case temperature
Tcase, terminal current Icmax = 600 A @ TTerminal = 100 °C
Fig. 3
Typical turn-on and turn-off energy dissipation Eon and Eoff of an IGBT element and turnoff energy dissipation Err of a freewheeling diode as a function of the continuous collector
current IC for inductive load
Fig. 4
Typical turn-on and turn-off energy dissipation Eon and Eoff of an IGBT element and turnoff energy dissipation Err of a freewheeling diode as a function of the gate series
resistance RG for inductive load
Fig. 5
Typical transfer characteristic: continuous collector current IC as a function of the gateemitter voltage VGE; Values at terminal level, including RCC´ + EE´
Fig. 6
Typical gate charge characteristic: gate-emitter voltage VGE as a function of the gate
charge QG
Fig. 7
Typical IGBT switching times tdon, tr , tdoff and tf as a function of the continuous collector
current IC for inductive load and fixed gate series resistance RG for Tj = 125 °C
Fig. 8
Typical IGBT switching times tdon, tr , tdoff and tf as a function of the gate series resistance
RG for inductive load and fixed collector current IC for Tj = 125 °C
Fig. 9
Transient thermal impedance Zth(j-c) of the IGBT element and the diode element as single
pulse expired following an abrupt change in power dissipation
Fig. 10
Typical forward characteristics of the inverse diode (typical and maximum values) for T j =
25 °C and Tj = 125 °C
Fig. 11
Typical peak reverse recovery current IRRM of the inverse diode as a function of the fall
rate diF/dt of the forward current with corresponding gate series resistance RG of the
IGBT during turn-on
Fig. 12
Typical recovery charge Qrr of the inverse diode as a function of the fall rate diF/dt of the
forward current (Parameters: forward current IF and gate series resistance RG of the
IGBT during turn-on)
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SEMiX® - Technical Explanations
13.2 Thyristor/Diode and Rectifier Modules
Fig. 1 L
Mean power dissipation PTAV (PFAV) of a single thyristor (diode) as a function of the mean
on-state (forward) current ITAV (IFAV) for DC-current (cont.), sinusoidal half waves
(sin.180) and square-wave pulses (rec.15…180).
Fig. 1 R
Maximum permissible power dissipation PTAV (PFAV) as a function of the ambient
temperature Ta (temperature of the cooling air flow) for the total thermal resistance
(junction to ambient air) Rth(j-a) (typical values).
Fig. 2 L
Total power dissipation PTOT of a SEMiX thyristor module used in an AC-controller
application (W1C AC-converter) as a function of the maximum rated root mean square
current IRMS at full conduction angle (typical values).
Fig. 2 R
Maximum permissible power dissipation PTOT and resultant case temperature Tc as a
function of the ambient temperature T a, plotted for different values of the thermal
resistance Rth(c-a) (case to ambient air). For the power dissipation given on the left vertical
axis the corresponding case temperatures on the right vertical axis are not to be
exceeded.
Fig. 3 L
Total power dissipation PTOT of two SEMiX thyristor/diode modules in a two-pulse bridge
connection (B2C) as a function of the direct output current ID either for resistive (R) or
inductive (L) load. For thyristor modules the curve for operation at full conduction angle is
shown (typical values).
Fig. 3 R
Maximum permissible power dissipation PTOT and resultant case temperature Tc as a
function of the ambient temperature T a, plotted for different values of the thermal
resistance Rth(c-a) (case to ambient). For the power dissipation given on the left vertical
axis the corresponding case temperatures on the right vertical axis are not to be
exceeded.
Fig. 4 L
Total power dissipation PTOT of one SEMiX bridge rectifier module or three SEMiX
thyristor/diode modules in a six-pulse bridge connection (B6C) as a function of the direct
output current ID. For a possible AC-controller connection (W3C) the total power
dissipation is plotted over the root mean square current IRMS. For thyristor modules the
curves for operation at full conduction angle are shown (typical values).
Fig. 4 R
Maximum permissible power dissipation PTOT and resultant case temperature Tc as a
function of the ambient temperature T a, plotted for different thermal resistance values
Rth(c-a) (case to ambient). For the power dissipation given on the left vertical axis the
corresponding case temperatures on the right vertical axis are not to be exceeded.
Fig. 5
Typical recovery charge Qrr for the max. permissible junction temperature as a function of
the rate of fall of the forward current –diT/dt and the peak on-state current ITM before
commutation,
Fig. 6
Transient thermal impedances Zth(j-c) (junction to case) and Zth(j-s) (junction to sink) for a
single thyristor/diode chip as a function of the time t elapsed after a step change in power
dissipation.
Fig. 7
Forward characteristics: on-state voltage VT (forward voltage VF) as a function of the onstate current IT (forward current IF); typical and maximum values for T vj=25°C and Tvjmax.
Fig. 8
Surge current characteristics: ratio of the permissible overload on-state current IT(OV)
(IF(OV)) to the surge on-state current ITSM (IFSM) as a function of the load period t and the
ratio of VR / VRRM , where VR denotes the reverse voltage applied between the sinusoidal
half waves and VRRM is the peak reverse voltage.
Fig. 9
Thyristor modules only: gate voltage VG as a function of the gate current IG, indicating the
regions of possible (BMZ) and certain (BSZ) triggering for various virtual junction
temperatures Tvj. The current and voltage values of the triggering pulses must lie within
the range of certain (BSZ) triggering, but must not exceed the peak pulse power P G given
for the pulse duration tp. Curve 20 V; 20 is the output characteristic of suitable trigger
equipment.
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SEMiX® - Technical Explanations
14 Disclaimer
The specifications of our components may not be considered as an assurance of component
characteristics. Components have to be tested for the respective application. Adjustments may be
necessary. The use of SEMIKRON products in life support appliancesand systems is subject to prior
specification and written approval by SEMIKRON. Wetherefore strongly recommend prior consultation
of our personal.
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