Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. 1N5820 and 1N5822 are Motorola Preferred Devices • Extremely Low vF • Low Power Loss/High Efficiency • Low Stored Charge, Majority Carrier Conduction SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case • Shipped in plastic bags, 5,000 per bag • Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part number • Polarity: Cathode indicated by Polarity Band • Marking: 1N5820, 1N5821, 1N5822 CASE 267–03 PLASTIC MAXIMUM RATINGS Rating Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V Non–Repetitive Peak Reverse Voltage VRSM 24 36 48 V VR(RMS) 14 21 28 V RMS Reverse Voltage Average Rectified Forward Current (2) VR(equiv) 0.2 VR(dc), TL = 95°C (RθJA = 28°C/W, P.C. Board Mounting, see Note 2) v IO Ambient Temperature Rated VR(dc), PF(AV) = 0 RθJA = 28°C/W TA Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75°C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Peak Operating Junction Temperature (Forward Current applied) 3.0 90 85 A 80 °C IFSM 80 (for one cycle) A TJ, Tstg *65 to +125 °C TJ(pk) 150 °C *THERMAL CHARACTERISTICS (Note 2) Characteristic Thermal Resistance, Junction to Ambient Symbol Max Unit RθJA 28 °C/W (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. (2) Lead Temperature reference is cathode lead 1/32″ from case. * Indicates JEDEC Registered Data for 1N5820–22. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Rev 2 Device Rectifier Motorola, Inc. 1996 Data 1 *ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2) Characteristic Symbol Maximum Instantaneous Forward Voltage (1) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) VF Maximum Instantaneous Reverse Current @ Rated dc Voltage (1) TL = 25°C TL = 100°C iR 1N5820 1N5821 1N5822 0.370 0.475 0.850 0.380 0.500 0.900 0.390 0.525 0.950 2.0 20 2.0 20 2.0 20 Unit V mA (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. (2) Lead Temperature reference is cathode lead 1/32″ from case. * Indicates JEDEC Registered Data for 1N5820–22. NOTE 1 — DETERMINING MAXIMUM RATINGS The data of Figures 1, 2, and 3 is based upon dc conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). TA(max) = TJ(max) RθJAPF(AV) RθJAPR(AV) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125°C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RθJA = Junction–to–ambient thermal resistance VR(equiv) = V(FM) (1) RθJAPR(AV) Step 1. Find VR(equiv). Read F = 0.65 from Table 1, VR(equiv) = (1.41) (10) (0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 108°C @ VR = 9.2 V and RθJA = 40°C/W. Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W (2) @ Substituting equation (2) into equation (1) yields: TA(max) = TR RθJAPF(AV) (4) The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max) for 1N5821 operated in a 12–volt dc supply using a bridge circuit with capacitive filter such that IDC = 2.0 A (IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RθJA = 40°C/W. Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TR = TJ(max) F I (FM) I (AV) 10 and IF(AV) 1.0 A. Step 4. Find TA(max) from equation (3). TA(max) = 108 (0.85) (40) = 74°C. **Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its lower forward voltage, and higher for the 1N5822. Variations will be similar for the MBR–prefix devices, using PF(AV) from Figure 7. (3) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125°C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115°C. Table 1. Values for Factor F Circuit Full Wave, Bridge Full Wave, Center Tapped*† Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3 Square Wave 0.75 1.5 0.75 0.75 1.5 1.5 *Note that VR(PK) 2 Half Wave 2.0 Vin(PK). †Use line to center tap voltage for Vin. Rectifier Device Data 20 125 15 10 8.0 115 105 RqJA (°C/W) = 70 50 95 40 28 85 TR , REFERENCE TEMPERATURE (°C) TR , REFERENCE TEMPERATURE (°C) 125 75 15 10 115 8.0 105 RqJA (°C/W) = 70 50 95 40 28 85 75 2.0 3.0 4.0 5.0 7.0 10 20 15 3.0 5.0 7.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Maximum Reference Temperature 1N5820 Figure 2. Maximum Reference Temperature 1N5821 30 40 20 R qJL , THERMAL RESISTANCE JUNCTION–TO–LEAD (°C/W) 10 8.0 105 RqJA (°C/W) = 70 95 50 40 85 MAXIMUM TYPICAL 35 15 115 30 25 20 15 10 BOTH LEADS TO HEAT SINK, EQUAL LENGTH 5.0 28 75 4.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 125 TR , REFERENCE TEMPERATURE (°C) 20 0 5.0 7.0 10 15 20 30 40 0 1/8 2/8 3/8 4/8 5/8 6/8 7/8 VR, REVERSE VOLTAGE (VOLTS) L, LEAD LENGTH (INCHES) Figure 3. Maximum Reference Temperature 1N5822 Figure 4. Steady–State Thermal Resistance Rectifier Device Data 1.0 3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.5 0.3 0.2 0.1 The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady–state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + DTJL LEAD LENGTH = 1/4″ 0.03 0.02 0.01 0.5 1.0 2.0 5.0 10 Ppk DUTY CYCLE = tp/t1 PEAK POWER, Ppk, is peak of an TIME equivalent square power pulse. t1 ∆TJL = Ppk • RθJL [D + (1 – D) • r(t1 + tp) + r(tp) – r(t1)] where: ∆TJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time t1 + tp, etc. 0.05 0.2 Ppk tp 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k t, TIME (ms) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) Figure 5. Thermal Response 10 7.0 5.0 NOTE 3 — APPROXIMATE THERMAL CIRCUIT MODEL SINE WAVE I (FM) p (Resistive Load) I (AV) RθS(A) + 3.0 2.0 1.0 0.7 0.5 Capacitive Loads NJ dc TJ ≈ 125°C 0.1 0.3 RθL(K) RθJ(K) RθS(K) TA(K) PD TC(A) TJ TC(K) TL(K) SQUARE WAVE 0.2 0.2 RθJ(A) TA(A) TL(A) 5.0 10 20 0.3 0.1 RθL(A) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IF(AV), AVERAGE FORWARD CURRENT (AMP) Figure 6. Forward Power Dissipation 1N5820–22 Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RθS = Thermal Resistance, Heat Sink to Ambient RθL = Thermal Resistance, Lead to Heat Sink RθJ = Thermal Resistance, Junction to Case PD = Total Power Dissipation = PF + PR PF = Forward Power Dissipation PR = Reverse Power Dissipation (Subscripts (A) and (K) refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RθL = 42°C/W/in typically and 48°C/W/in maximum RθJ = 10°C/W typically and 16°C/W maximum The maximum lead temperature may be found as follows: TL = TJ(max) n TJL RθJL · PD where n TJL * [ Mounting Method 1 P.C. Board where available copper surface is small. NOTE 2 — MOUNTING DATA Data shown for thermal resistance junction–to–ambient (RθJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RθJA IN STILL AIR 1/8 1/4 1/2 3/4 RθJA 1 50 51 53 55 °C/W 2 58 59 61 63 °C/W 4 28 ÉÉ ÉÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉÉ ÉÉ ÉÉ ÉÉ ÉÉÉÉÉÉÉÉ L P.C. Board with 2–1/2″ x 2–1/2″ copper surface. L L = 1/2″ Mounting Method 2 Lead Length, L (in) Mounting Method 3 Mounting Method 3 °C/W L L BOARD GROUND PLANE VECTOR PUSH–IN TERMINALS T–28 Rectifier Device Data 100 IFSM , PEAK HALF–WAVE CURRENT (AMP) 50 30 20 TJ = 100°C 7.0 5.0 50 TL = 75°C f = 60 Hz 30 20 1 CYCLE SURGE APPLIED AT RATED LOAD CONDITIONS 10 25°C 3.0 2.0 1.0 3.0 5.0 7.0 10 20 30 50 70 100 NUMBER OF CYCLES 2.0 Figure 8. Maximum Non–Repetitive Surge Current 1.0 100 0.7 50 0.5 20 TJ = 125°C 10 IR , REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMP) 10 70 0.3 0.2 0.1 0.07 0.05 100°C 5.0 2.0 75°C 1.0 0.5 0.2 25°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.05 1N5820 1N5821 1N5822 0.02 Figure 7. Typical Forward Voltage 0.01 0 4.0 8.0 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 500 Figure 9. Typical Reverse Current 1N5820 300 NOTE 4 — HIGH FREQUENCY OPERATION 200 1N5821 TJ = 25°C f = 1.0 MHz 100 1N5822 70 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 11.) 30 VR, REVERSE VOLTAGE (VOLTS) Figure 10. Typical Capacitance Rectifier Device Data 5 PACKAGE DIMENSIONS B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D 1 K DIM A B D K A INCHES MIN MAX 0.370 0.380 0.190 0.210 0.048 0.052 1.000 ––– MILLIMETERS MIN MAX 9.40 9.65 4.83 5.33 1.22 1.32 25.40 ––– STYLE 1: PIN 1. CATHODE 2. ANODE K 2 CASE 267–03 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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