Application Note - Dynex Semiconductor Ltd.

2014
Application Note
Replaces AN5947-1 with AN5947-2 November 2014 LN32141
November LN32141
Table of Contents
Introduction: .................................................................................................................................................... 3
Dynex IGBT Module Nomenclature:......................................................................................................... 3
Part Number: DIM1500ESM33-TS000 ................................................................................................... 4
Features: ............................................................................................................................................................ 5
Applications: .................................................................................................................................................... 5
Ordering Information: .................................................................................................................................. 5
Key Parameters:.............................................................................................................................................. 5
Absolute Maximum Ratings: ....................................................................................................................... 5
Thermal and Mechanical Ratings: ............................................................................................................ 8
Electrical Characteristics: .......................................................................................................................... 10
Static Characteristics:........................................................................................................................ 10
Dynamic Characteristics:................................................................................................................... 13
Basic Test Circuit and Switching Definitions:..................................................................................... 16
Switching Energies: ........................................................................................................................... 17
Diode forward characteristic: ........................................................................................................... 18
Reverse bias safe operating area (RBSOA): ...................................................................................... 18
Diode RBSOA: .................................................................................................................................... 19
Transient Thermal Impedance Curves: ............................................................................................. 19
Package Outline Details: ............................................................................................................................ 20
Dynamic Test Circuit: .................................................................................................................................. 21
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Understanding IGBT Module Datasheets
Introduction:
This note will guide you through the Dynex Semiconductor IGBT Module data sheet format
and discuss fully its contents. For the purpose of discussion and illustration Dynex IGBT
Module part number DIM1500ESM33-TS000 is chosen and explained in sequence starting
from the first page.
An IGBT datasheet generally includes tables and graphs of data regarding device ratings and
characteristics. In order to use an IGBT Module datasheet properly it is important that the
user has a good understanding of the information presented in the datasheet. The aim of this
article is to explain the ratings and characteristics of Dynex range of high power IGBT
Modules. Hopefully this will promote an efficient and reliable use of the device and also help
the user to make a correct choice of device for the intended application.
Dynex IGBT Module Nomenclature:
The module designation for the Dynex as shown below;
D
=
Dynex Semiconductor Identifier
I
=
Prime Technology
M
=
Module Generic Identifier
1500
=
Nominal current rating
E
=
Package outline/power terminal layout
S
=
Module electrical circuit
M
=
Baseplate Material Identifier
33
=
Voltage rating divided by 100
TS
=
Silicon Technology Identifier
000
=
Special Selection Number (defaults to 000 for standard product)
(-)
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EXAMPLES:
DIM1500ESM33-TL000: IGBT Module, E package outline, 1500A single switch, MMC
baseplate, 3300V Enhanced soft punch through IGBT Silicon,
low Vce variant.
DIM800DDM17-A000: IGBT Module, D package outline, 800A dual switch, MMC
baseplate, 1700V NPT DMOS IGBT silicon.
DFM300WXS18-A000: FRD Module, W package outline, 300A Diode, copper baseplate,
1800V "A" series diode silicon.
Part Number: DIM1500ESM33-TS000
The DIM1500ESM33-TS000 has been chosen for explaining the characteristic and
parameters step by step in this note.
This is followed by the description of the module type such as: “Single Switch IGBT
Module”
This means that the module is an independent switch made up of IGBT/anti-parallel diode.
The actual circuit configuration is given in Fig. 1.
Figure 1: Circuit configuration
Figure 2: Outline type code E package
Dynex datasheets are controlled documents with a specific document number, issue number
and date. This information appears in a small print. Dynex reserves the right to change the
datasheets without notice and so the users are advised to refer to the latest version by visiting
Dynex web site: http://www.dynexsemi.com
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Features:
The features section outlines specific key attributes of the device and technologies. The
picture/photograph of the actual module is given in Fig. 2.
Applications:
A few examples of possible application are indicated here, followed by a brief description of
the module and its capability. It should be noted that inclusion in this section does not imply
that Dynex has fully tested the device under all application conditions. The suitability of a
device for a given application rests solely with the user.
Ordering Information:
Order as: DIM1500ESM33-TS000
This specifies the correct part number for ordering the device.
Key Parameters:
This is a summary of main parameters unique to the part number. The full description of
these parameters is found with appropriate test conditions in the main body of the datasheet.
It is important that when comparing with other similar product a full description of the
parameters should be consulted as manufacturers often specify different test conditions.
Absolute Maximum Ratings:
Table 1: Absolute maximum ratings
The ratings of the device are divided into the electrical, thermal and mechanical ratings. The
parameters are given in a tabulated form. The applied stresses above those listed under
“Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure to Absolute
Maximum Ratings for extended periods may affect device reliability.
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VCES - Collector - Emitter Voltage:
VCES is defined as the maximum continuous DC collector-to-emitter blocking voltage with
gate-to-emitter terminals shorted and case temperature. It is important not to exceed the stated
value as it is possible to damage the forward blocking junction leading to catastrophic failure
of the device.
Most IGBTs are designed to operate directly from the rectified commercial and industrial
mains supply voltages. Dynex offers IGBT modules which are rated at 1200V, 1700V,
3300V, 4500V and 6500V. The circuit designer has to ensure that the choice of voltage grade
device is such that the operating DC line voltage, any variation of this voltage, and overvoltage transients generated due to device switching, is less than VCES.
For example, for a 750V DC line voltage the overhead room to allow for the voltage variation
and switching transients is 450V for 1200V IGBT. If this is not enough then one chooses the
next higher voltage grade IGBT (e.g. 1700V). However, this device will have higher power
losses. The user can:
a) Account for increased losses by designing the appropriate thermal circuit.
b) Minimise circuit inductance by careful layout of the circuit thus reducing the
switching transients.
c) Consider using an external snubber circuit to suppress the over-voltage transients.
The final decision is based on the efficiency and the cost of the system.
Most semiconductor devices are susceptible to cosmic radiation and using high DC voltage
will induce higher failure rate. Therefore the operating dc voltage should be kept much lower
than the maximum VCES.
VGES - Gate-Emitter Voltage:
VGES is defined as the maximum gate-emitter voltage. This voltage is a function of thickness
and characteristics of the gate oxide layer. For long term reliability it is necessary not to
exceed the specified value. VGE controls the maximum collector current and the family of
output characteristics as a function of VGE ranging from ±10V to ±20V is included in the
datasheet graph section.
IC - Continuous Collector Current:
This is a temperature dependant continuous collector current rating. It is defined as the
maximum DC current that can flow through the device while its case temperature (
) is
held at the specified level and the junction temperature is allowed to rise to the maximum
permitted value (
) due to the power dissipation (P) in the device. is determined from
the following relationship:
Where;
This is essentially a current rating based on the thermal rating of the package. That is with
fixed
= 150°C the current rating varies with the choice of . Usually
is chosen to
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give the headline DC current rating. For example
= 110°C is chosen to give 1500A DC
current rating for the module DIM1500ESM33-TS000. When comparing with other similar
product from different manufacturer it is important to note under what condition the DC
current rating is specified.
IC(pk) - Peak Collector Current:
This is the maximum pulsed collector current rating and it is specified at 1ms pulse duration.
It is partly based on the device thermal rating as per Eqn.1 with 1ms transient thermal
resistance value and partly on other factors. In most cases
. The case
temperature
is adjusted to give this value. For DIM1500ESM33-TS000,
=140°C.
Pmax – Maximum IGBT Power Dissipation:
Pmax is the maximum continuous power dissipation in the IGBT part of the module and it is
calculated from Eqn.2.
In the datasheet it is specified with the
for DIM1500ESM33-TS000.
= 25°C and
= 150°C which results in
I2t – Diode I2t value:
This rating is the diode surge current rating and is given by the integral of a half-sine wave
defined in the Eqn.3.
This rating is derived by test and measurements.
is specified in the datasheet with reverse
voltage
and = 150°C. This rating is important for dimensioning
the diode for fault current tolerance.
Visol – Isolation voltage – per module:
This is the maximum isolation voltage between all module terminals and the insulated base
plate. The value is given for the conditions of AC RMS voltage
for 1min. The
isolation voltage of each voltage range is defined by the equation
QPD – Partial discharge – per module:
Partial discharge is a two stage test, where an electrical potential is placed between the
terminals of the module and baseplate. To pass, there must be a charge of <10pC between
the terminals and the baseplate during the last 10 seconds of the profile. The test is intended
Understanding IGBT Module Datasheets
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to expose impurities in the modules dielectric material. Over extended periods during
operation, these impurities could propagate and form conductive paths between the live areas
of the module and the heatsink. The modules are tested between the terminals and the baseplate as per IEC1287 Standard. Applied voltages are
RMS AC.
Thermal and Mechanical Ratings:
Table 2: Thermal and mechanical ratings
Internal insulation material:
This gives information about the material used for the substrate which provides the electrical
insulation between the active device and the base-plate. This could be alumina
or
aluminium-nitride (
).
Base-plate material:
This provides the information about the base-plate material.
The insulating substrate material is chosen to match the base-plate material to reduce stresses
caused by thermal expansion. For copper base-plates, alumina
substrates are used
and for metal matrix composite
base-plates aluminium-nitride (
) substrates are
used. For applications requiring enhanced temperature cycling capability
substrates
and
base-plate are used.
Creepage distance:
This is the minimum surface creepage distance between any two electrical terminals.
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Clearance:
This is the minimum direct air strike distance between any two electrical terminals.
CTI – Comparative Tracking Index:
This is the comparative value of resistance to surface tracking or erosion of the case material
(plastic) under an electrical stress.
Rth(j-c) - Thermal Resistance:
is the steady state thermal resistance between junction and case. This is made up of
thermal resistance of silicon chip, isolation material, solder interfaces and base-plate. Two
values of
are specified, one for the IGBT switch and another for the anti-parallel
diode.
Rth(c-h) - Contact Thermal Resistance:
is the contact thermal resistance between the case (base-plate) of the device and the
heatsink. This resistance is a function of the fixing screw mounting torque, quality of the
mounting surfaces and the interface compound or material used. The user should follow the
recommended mounting procedure to obtain the optimum results (see application note
AN4505).
Tj - Junction Temperature:
Junction temperature defines the maximum permissible operating junction temperature,
for the IGBT and diode to give reliable operation.
Tstg - Storage Temperature Range:
This is defined as the minimum and maximum storage temperature range. Note that
degradation of materials used in the module can occur due to temperature variation and this
process can be accelerated outside the specified storage range.
Mounting Torque:
These are the maximum limits for the screw torques applied to the busbar connections and
the base-plate fastening to the heatsink. It should be emphasised that insufficient torque
applied to the mounting screws may result in poor contact thermal resistance to the heatsink
and excessive applied torque can result in the damage to the module. For further information
please see application note AN4505, ‘Heatsink Issues for IGBT Modules’.
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Electrical Characteristics:
The electrical characteristics of the module are divided into tables listing the static and the
dynamic parameters.
Table 3: Electrical characteristics
Static Characteristics:
These characteristics describe the behaviour of device in steady state conditions either in the
"off-state" or "on-state” (conduction-state). These characteristics are measured at the case
temperature of 25°C unless stated otherwise.
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ICES - Collector Cut-off Current:
is the collector to emitter blocking (or cut-off) current specified at the rated collector to
emitter blocking voltage
with gate-emitter shorted.
IGES - Gate Leakage Current:
is the current that flows between gate to emitter terminals with collector emitter shorted
when a specified voltage
is applied across gate-emitter terminals.
VGE (TH) - Gate Threshold Voltage:
is the gate to emitter threshold voltage and it is the minimum gate-emitter voltage
required to turn-on the IGBT at specified ,
and case temperature.
VCE (sat) - Collector-Emitter Saturation Voltage:
is the collector to emitter saturation voltage. This is the on-state voltage of the IGBT
at rated collector current and specified gate-emitter voltage. Note that this voltage can be
measured at the busbars terminals and hence includes the internal resistance
(separately
specified). In some modules it is measured using the auxiliary terminals (i.e. at chip level)
and hence does not include
. When calculating power dissipation in the IGBT it may be
prudent to deduct the power dissipation due to internal resistance where
is measured
at the busbar level.
IF - Diode forward current:
This is the maximum DC forward current of the diode part in the module.
IFM - Diode maximum forward current:
This the maximum peak forward current of the diode specified at 1ms pulse duration.
VF – Diode forward voltage:
is the forward voltage drop of the diode when flows through it. Note again that this is
specified at the busbar level unless specified otherwise.
Cies – Input capacitance:
The input capacitance Cies is defined as the capacitance between the gate and the emitter
terminals with the collector terminal shorted to the emitter terminal. This capacitance needs
to be charged before turning the IGBT on. It also has influence on the rise time of the
collector current. This is measured at
.
Qg – Gate charge:
is the gate charge required to charge the input capacitance such that to raise the gate
voltage from a specified minimum to maximum value.
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Cres – Reverse transfer capacitance:
The reverse transfer capacitance is defined as the capacitance between the collector and the
gate terminals. This capacitance is sometimes referred to as “Miller” capacitance. This
capacitance is effectively in parallel with the input capacitance and hence has influence on
the rise time of the collector current.
LM – Module inductance – per switch:
This is inductance of the IGBT switch measured between collector-emitter terminals.
RINT – Internal transistor resistance – per switch:
This internal resistance of the IGBT switch is measured between collector-emitter terminals
but excludes the resistance of the bond wires and the chip. The collector-emitter voltage
measured at the busbar level is given by the Eqn.5.
SCData – Short circuit current, ISC:
This describes the typical short circuit current of the IGBT switch under the given conditions.
When the IGBT is switched on into a hard short circuit it reaches a maximum current which
is a function of gate driver characteristics, the IGBT trans-conductance
and the junction
temperature. This peak is measured under the conditions of
.
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Dynamic Characteristics:
Table 4: Dynamic electrical characteristics
The dynamic characteristics given in the Dynex IGBT module datasheets are based on an
inductive switching using a clamped inductive load as encountered in many applications. The
basic test circuit is shown in Fig. III. The switching parameters definition may vary from
other manufacturers and this should be taken into consideration when benchmarking modules
from different suppliers.
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Figure I: Timing diagram and energy losses
td(on) - Turn-on delay time:
The turn-on delay time
is defined as the time for
to reach 10% of its final value to
the time when the collector current
has reached 10% of its final value.
(See Fig. I)
tr – Rise time:
The rise time is defined as the time taken for the collector current to increase from 10% to
90% of its final value. is influenced by the IGBT gate characteristics.
(See
Fig. I)
EON - Turn-on energy loss:
The turn-on energy loss per pulse
is defined as per Fig. I, from
. This loss is the
integration of the collector-emitter voltage and the collector current as expressed by Eqn.6.
td(off) - Turn-off delay time:
is defined as the time interval from
initial value, prior to turn-off transition.
Understanding IGBT Module Datasheets
of its initial value to
(See Fig. I)
of its
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tf – Fall time:
The fall time of collector current tf is defined as the time interval between
of initial value.
(See Fig. I)
to 10%
EOFF - Turn-off energy loss:
The turn-off energy loss per pulse
is defined as per Fig. I, from
. This loss is the
integration of the collector-emitter voltage and the collector current as expressed by Eqn.7.
VAK
Figure II: Diode timing diagram
Qrr – Diode reverse recovery charge:
Diode reverse recovery charge is specified under the conditions of diode forward current
the applied reverse voltage
and the rate of fall of diode current
The total
reverse recovery charge is obtained by the integral of the reverse recovery current, thus
For the measurement purpose the actual integration time is defined in the Fig. II.
Irr – Diode reverse recovery current:
This is the peak reverse recovery current in the diode. This is defined under the conditions
of ,
and
Erec – Diode reverse recovery energy:
The diode reverse recovery energy is defined by the Eqn.9. For the purpose of measurement
the integration time is defined in the Fig. II.
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Basic Test Circuit and Switching Definitions:
Fig. III shows the schematic of the circuit used to test the IGBTs for inductive switching.
Switching is accomplished using a double pulse method. The first pulse switches the IGBT
on and establishes current in the load inductance. At the end of this pulse, the DUT is turned
off and the current is transferred to the free-wheel diode. The second pulse turns the DUT on
again and free-wheel diode recovers and the IGBT is turned off at the end of this pulse. The
timings of these pulses are adjusted to give the required collector current amplitude. The
associated switching wave forms are given in Fig. I. This figure also gives definitions used by
Dynex for the switching characteristics.
CURVES:
Output Characteristics:
Output Characteristics depict the saturation characteristics of the IGBT where collector
current is plotted against collector-emitter saturation voltage with case temperature and gateemitter voltage as parameters as shown in Fig. 3 and Fig. 4.
Figure 3: Typical output characteristics Tj @ 25°C
Figure 4: Typical output characteristics Tj @ 150°C
This is one of the key parameters of the IGBT and it is used to calculate on-state power loss
in the IGBT. The average conduction power loss
in the IGBT is given by:
Where δ is the duty cycle.
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Switching Energies:
The switching energies i.e. the turn-on energy (
), the turn-off energy (
) in the IGBT
and the reverse recovery energy in the diode (
) are functions of collector current,
collector voltage, gate resistance and junction temperature. These relationships are
graphically represented by curves of:
i)
ii)
,
,
and
and
Vs collector current see Fig. 5 and
Vs gate resistance Fig. 6.
These switching losses are measured under inductive switching conditions. Both
and
increase with increase in collector current and case temperature. The gate resistance
has a marked influence on Eon. The reason for this is by increasing the gate resistance the
rate of rise of collector current decreases. The collector - emitter voltage also falls gradually
hence giving rise to increased losses. In order to estimate average power losses due switching
energy, read off appropriate EON and EOFF for specified operating conditions then the average
switching power dissipation is given by:
Where
is the repetition frequency. Switching losses are a function of operating frequency
and at higher frequencies these losses become dominant over the conduction losses.
Figure 5: Typical switching energy VS collector current
Understanding IGBT Module Datasheets
Figure 6: Typical switching energy VS gate resistance
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Figure 7: Diode typical forward characteristics
Figure 8: Reverse bias safe operating area
Diode forward characteristic:
Fig. 7 shows typical diode forward characteristics with junction temperature at 25°C, 125°C
and 150°C.
Reverse bias safe operating area (RBSOA):
The safe operating area SOA of an IGBT is the area bounded by a curve of collector current
VS collector-emitter voltage. The curve gives the limits of current and voltage related to the
total power dissipation of the device. If the operating conditions of the device are within this
area, then the device will function safely provided
is not exceeded. The reverse bias
safe operating area (RBSOA) curve is the locus of points defining the maximum permissible
simultaneous occurrence of collector current and collector-emitter voltage during the turn-off
phase, (see Fig. 8). The curve exhibits three limiting boundaries; maximum collector current
(the flat portion of the curve), the maximum power (sloping line) and maximum voltage
(vertical line). The user should observe that the RBSOA curve is constructed for a given set
of conditions and so it is useful for comparison between different devices.
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Figure 9: Diode reverse bias safe operating area
Figure 10: Transient thermal impedance
Diode RBSOA:
Fig. 9 shows diode reverse bias safe operating area. This is the plot of the instantaneous
reverse recovery current against reverse recovery voltage. The maximum limit of reverse
recovery current is set by the recommended gate resistor specified in the datasheet. The
maximum limit of reverse recovery voltage is set by the diode reverse blocking voltage
rating. The user should verify that during the commutation of diode current to the IGBT, the
reverse recovery current and the voltage should stay within the RBSOA of the diode for the
complete process. Also the maximum junction temperature of the FWD should not exceed
150°C and the maximum switching
controlled by the gate conditions of the IGBT
should not be allowed to be exceeded.
Transient Thermal Impedance Curves:
This curve shows how the junction-case thermal resistance of the device varies with time, as
measured from the start of power dissipation. Fig. 10 shows the curves for the IGBT and
diode. Also the analytical function for these curves modelled by the sum of four exponential
terms is specified by the Eqn. 12.
The coefficients of the curve fit Ri and τi are given in a table embedded in the figure. The
analytical function is especially suitable for calculations performed on the computer.
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Package Outline Details:
This gives the drawing of the package outline with dimensions (in mm, unless otherwise
stated), Fig. 11. Any additional information can be obtained by contacting Dynex Customer
Service Centres.
190 ±0.5
171 ±0.15
57 ±0.1
6 x M8
screwing depth
max. 16
5.2 ±0.2
40 ±0.2
124 ±0.1
40 ±0.2
140 ±0.5
20 ±0.1
7
20.25 ±0.2
28 ±0.5
8 x Ø7
screwing depth
max. 8
41.25 ±0.2
3 x M4
79.4 ±0.2
61.5 ±0.3
61.5 ±0.3
5 ±0.2
38 ±0.5
13 ±0.2
external connection
5(C)
3(C)
external connection
external connection
7(C)Nominal
9(C)
Weight:
7(C)
9(C) Type5(C)
1400g Module
Outline
Code: E
3(C)
5(C)
7(C)
9(C)
4(E)
6(E)
8(E)
2(G) Module outline drawing
Figure 11:
2(G)
1(E)
1(E)
4(E)
6(E)
8(E)
external connection
DIM....ESM.......
Understanding IGBT Module Datasheets
6(E)
8(E)
external connection
DIM....ECM.......
4(E)
external connection
DFM....EXM.......
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Dynamic Test Circuit:
Figure III: Dynamic Test Circuit
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Short circuit waveform:
Figure IV: Short Circuit Current ISC
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IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any
guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and the completeness of the
product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met.
Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors.
The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most
up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety
equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the
product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production.
The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work
on the product has been started.
Preliminary Information: The product design is complete and final characterisation for volume production is in progress. The datasheet
represents the product as it is now understood but details may change.
No Annotation: The product has been approved for production and unless otherwise notified by Dynex any product ordered will be
supplied to the current version of the data sheet prevailing at the time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective
owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln, Lincolnshire, LN6 3LF,
United Kingdom
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United
Kingdom
Fax:
Tel:
Web:
Fax:
Tel:
Email:
+44(0)1522 500550
+44(0)1522 500500
http://www.dynexsemi.com
 Dynex Semiconductor Ltd. 2003
+44(0)1522 500020
+44(0)1522 502753 / 502901
[email protected]
Technical Documentation – Not for resale.
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