Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM 64Kb-16Mb Pseudo SRAM 8Mb-64Mb *DRC = DRAM Controller Long-term support SDR/DDR1 16Mb-512Mb Higher Density Highest density & bandwidth Low power Mobile DRAM 16Mb-1Gb DDR2 256Mb-2Gb Long-Term Support from ISSI - replace other vendors End Of Life (EOL) products Easy Cross Reference Email part numbers for other vendors EOL product to find equivalent ISSI part number. Email: [email protected] or [email protected] Free Samples Request a free sample of the equivalent ISSI product Special Support for Sync. SRAMs Save $$$ by replacing Samsung EOL products with ISSI Synchronous SRAMs with no need for Last Time Buys or system redesigns 1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • [email protected] • www.issi.com Industrial Grade Memory Products Industrial Systems Requiring Long-life Support for Memory Design & Production Software Ramp Integration Volume Production End Of Life 2-5 years 5+ years Approval 12-18 months 6 -12 months Typical Industrial System Product Life Cycle High-mix, low volume industrial market segments have special needs in terms of industry specifications, strict qualification cycles, long-life requirements (without product changes permitted), and extremely long in-field use with the highest reliability standards expected. The challenge for memory vendors is to ensure that by the end of the design cycle, they meet the requirement for long-term support covering extended production time with minimal design changes. ISSI’s strategy is based on supporting our customer’s needs for these long-life markets, so you can rely on ISSI for all your SRAM and DRAM needs. Select ISSI for Your Industrial Memory Applications! Industrial Electronics Requirements ISSI Solutions Long term support 7 to 10 years is typical life for an ISSI product Temperature Range: -40°C to +85°C All ISSI products are designed and tested for industrial temperature Leaded Package Option ISSI supports leaded package as well as ROHS x32 Organization ISSI offers broadest range of x32 products and aligns with typical 32-bit embedded processors Support for 5V products ISSI has 5V SRAMs and EDO/FP DRAMs Rugged products – high ESD tolerant ISSI test all devices for HBM and MM. Min spec 2KV HBM Support for mature products ISSI still support 64Kb SRAMs and all SDRAMs Roadmaps for long-term support ISSI offers optional die shrink products for long term support & cost down roadmap 1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • [email protected] • www.issi.com Industrial Grade Memory Products SDR Ordering Options Density Config. Part Number(1) Package TSOP2 1M x 16 4M x 16 2M x 32 16M x 8 IS42S16100E, IS42S16100F IS42S16400F, IS42S16400J IS42S32200E, (IS42S32200L) IS42S81600E, (IS42S81600F) 128Mbit 8M x 16 4M x 32 32M x 8 IS42S16800E, (IS42S16800F) IS42S32400E, (IS42S32400F) IS42S83200D, (IS42S83200G) 256Mbit 16M x 16 8M x 32 64M x 8 IS42S16160D, (IS42S16160G) IS42S32800D, (IS42S32800G) IS42S86400B, IS42S86400D 512Mbit 32M x 16 16M x 32 IS42S16320B, IS42S16320D IS42S32160C, (IS42S32160D) 16Mbit 64Mbit BGA ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Temperature Grade Com. Ind. Auto. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DDR Ordering Options Density Config. Part Number(1) 64Mbit 4M x 16 8M x 16 4M x 32 32M x 8 16M x 16 8M x 32 64M x 8 32M x 16 16M x 32 IS43R16400B IS43R16800CC, (IS43R16800E) IS43R32400D, (IS43R32400E) IS43R83200B, (IS43R83200D) IS43R16160B, (IS43R16160D) IS43R32800B, (IS43R32800D) IS43R86400D IS43R16320D IS43R32160D 128Mbit 256Mbit 512Mbit Mobile DDR Ordering Options Density 32Mbit 64Mbit 128Mbit 256Mbit 512Mbit Config. Part Number 2M x 16 IS43LR16200C 1M x 32 IS43LR32100C 4M x 16 IS43LR16400B 2M x 32 IS43LR32200B 8M x 16 IS43LR16800F 4M x 32 IS43LR32400F 16M x 16 (IS43LR16160F) 8M x 32 (IS43LR32800F) 32M x 16 IS43LR16320B 16M x 32 IS43LR32160B TSOP2-66 ■ ■ Package BGA-60 BGA-144 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Temperature Grade Com. Ind. Auto. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Mobile SDRAM Ordering Options Density Config. Part Number 16M 1M x 16 IS42xx16100G 2M x 16 IS42xx16200C 1M x 32 IS42xx32100C 4M x 16 IS42xx16400K 2M x 32 IS42xx32200K 8M x 16 IS42xx16800G 4M x 32 IS42xx32400G 16M x 16 IS42xx16160D, (IS42xx16160E) 8M x 32 IS42xx32800D, (IS42xx32800E) 32M x16 IS42xx16320D 16M x 32 IS42xx32160C, IS42xx32160D 32M 64M 128M 256M 512M Notes: 1.Automotive grade SDR part numbers begin with “IS45S” and Automotive grade DDR part numbers begin with “IS46R”. 2.xx: VM for Vdd = 1.8V, RM for Vdd = 2.5V, SM for Vdd = 3.3V. Production alternatives may be available. 3.Part numbers in parenthesis are sampling. All others in mass production. 4.Automotive grade Mobile DDR part numbers begin with “IS46LR”. 1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • [email protected] • www.issi.com ■ ■ ■ ■ ■ Industrial Grade Memory Products DDR2 SDRAM Product Features: • Single supply voltage of 1.8V ± 0.1V • SSTL_18 compatible inputs • Bidirectional differential or single-ended data strobe option • Data masking per byte on Write commands • Programmable burst length of 4 or 8 • Programmable CAS Latency of 3, 4, 5 or 6 • • • • Auto-Refresh and Self-Refresh Modes OCD (Off-Chip Driver Impedance Adjustment) ODT (On Die Termination) supported Package options: 126-ball BGA for x32, 84-ball BGA for x16, 60-ball BGA for x8 • Long-Term Support for all densities • Industrial and Automotive grade temperatures DDR2 SDRAM Ordering Options Density 256M 512M 1G 2G Config. Part No. Speeds Pkg. Ordering Options 8Mx32 IS43DR32801A DDR2-400B, DDR2-533C BGA(126) -5BBL, -5BBLI, -37CBL, -37CBLI 8Mx32 IS46DR32801A DDR2-400B BGA(126) -5BBLA1, -5BBLA2 16Mx16 IS43DR16160A DDR2-400B, DDR2-533C, DDR2-667D, DDR2-800E BGA(84) -5BBLI, -37CBL, -37CBLI, -3DBL, -3DBLI, -25EBL 16Mx16 IS46DR16160A DDR2-400B, DDR2-533C BGA(84) -5BBLA1, -37CBLA1, -5BBLA2 32Mx8 IS43DR83200A DDR2-533C BGA(60) -37CBLI 32Mx16 IS43DR16320B DDR2-533C, DDR2-667D, DDR2-800E, DDR2-800D BGA(84) -37CBL, -37CBLI, -3DBL, -3DBLI, -25EBL, -25EBLI, -25DBL, -25DBLI 32Mx16 IS46DR16320B DDR2-533C, DDR2-667D BGA(84) -37CBLA1, -3DBLA1, -37CBLA2, -3DBLA2 64Mx8 IS43DR86400B DDR2-533C, DDR2-667D, DDR2-800E, DDR2-800D BGA(60) -37CBLI, -3DBL, -3DBLI, -25EBLI, -25DBLI 64Mx16 IS43DR16640A DDR2-667D, DDR2-800E, DDR2-800D BGA(84) -3DBL, -3DBLI, -25EBL, -25EBLI, -25DBL, -25DBLI 64Mx16 IS46DR16640A DDR2-667D BGA(84) -3DBLA1, -3DBLA2 128Mx8 IS43DR81280A DDR2-667D, DDR2-800E, DDR2-800D BGA(60) -3DBL, -3DBLI, -25EBLI, -25DBLI 128Mx16 IS43DR16128 DDR2-667D BGA(84) -3DBL, -3DBLI 128Mx16 IS46DR16128 DDR2-667D BGA(84) -3DBLA1, -3DBLA2 Notes: 1. Automotive grade DDR2 part numbers begin with “IS46DR”. 2. Contact ISSI for other ordering options. RLDRAM® Memory Reduced Latency (RL) DRAM is a low-latency, high-bandwidth memory technology that is designed for high-performance applications such as networking, test equipment and other performance critical applications Density Common I/O / Separate I/O SIO 288Mbit CIO SIO 576Mbit CIO Notes: • 144-ball BGA Package: Leaded/Lead-free • Temperature grades: Commercial/Industrial Config. x9 x18 x9 x18 x36 x9 x18 x9 x18 x36 Part Number IS49NLS93200 IS49NLS18160 IS49NLC93200 IS49NLC18160 IS49NLC36800 IS49NLS96400 IS49NLS18320 IS49NLC96400 IS49NLC18320 IS49NLC36160 • Speeds: 300MHz, 400MHz • RLDRAM is a registered trademark of Micron, Technology, Inc. 1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • [email protected] • www.issi.com Industrial Grade Memory Products Asynchronous SRAMs Density 64Kb 256Kb 512Kb 1Mb 2Mb 4Mb 8Mb 16Mb 32Mb 64Mb Config. x8 x8 x16 x8 x16 x8 x16 x8 x16 x8 x16 x32 x8 x16 x32 x16 x16 Voltage* Speed*(typ) Package(s)* Legacy ■ ■ ■ ■ ■ ■ ■ ■ ■ High Speed Ultra Low Power ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ PSRAM/CRAM ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Key ■ = High Speed Product ■ = High Speed + ■ Low Power options ■ ■ 5V 1.65-3.6V HS 10-12ns LP 25-55ns SOJ TSOP BGA (8Mb only) HS 8-20ns LP 25-35ns SOJ TSOP mBGA ■ = Ultra Low Power 1.65-3.6V 1.8V, 2.7-3.6V PSRAM 1.8V CRAM 35-55ns 70ns SOJ TSOP mBGA TSOP (8Mb only) BGA(48) PSRAM BGA(54) CRAM *Check datasheets for specific part number. Synchronous SRAMs Density Config. x18 x32 x36 x18 x32 x36 x18 x32 x36 x18 x36 x72 x18 x36 x18 x36 2Mb 4Mb 8Mb 18Mb 36Mb 72Mb Voltage* Speed* Package(s)* † PipeLine / Flow Through ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.3V/2.5V 133-250 MHz TQFP PBGA BGA No Wait (equiv to ZBT™) QUAD / DDR-II QUADP / DDR-IIP† ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1.8V 250-333MHz 1.8V 300-550MHz BGA(165) BGA(165) ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.3V/2.5V 133-250 MHz TQFP PBGA BGA Equivalent to QDR™/QDR-II and DDR/DDR-II ZBT is a trademark of Integrated Device Technology Inc. QDR SRAM is a trademark of the QDT Consortium 1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • [email protected] • www.issi.com Industrial Grade Memory Products Innovative Design Reinforces ISSI’s Long-Term Commitment to SRAMs Error Correction Code (ECC) High Speed Low Power SRAMs This first Error Correction Code (ECC) based Asynchronous SRAM meets high quality requirements in automotive, industrial, military-aerospace, and other applications. A0-A17 IO0-7 IO8-15 Memory Lower IO Array 256Kx8 Decoder 8 8 /CE /OE /WE /UB /LB 12 8 I/O Data Circuit 8 ECC Array 256K x4 4 ECC 8 ECC Memory Upper IO Array 256Kx8 8 ECC Array 256K x4 4 Column I/O 12 Control Circuit Features: • Independent ECC with hamming code for each byte • Detect and correct one bit error per each byte • Better reliability than parity code schemes which can only detect an error but not correct an error • Backward Compatible: Drop in replacement to current in industry standard devices (without ECC) • 2Mb, 4Mb, 8Mb Asynch SRAMs products • Synchronous SRAM products in design Ultra Low Power SRAMs ISSI’s family of Ultra-Low Power (ULP) SRAMs offer significant power savings compared to other versions. Products are offered in densities of 1Mb, 2Mb, 4Mb, 8Mb and 16Mb, with options for x8 or x16 in a range of package types. IS62WV1288DBLL IS65WV1288DBLL Comments 128Kx8 Ultra Low Power 128Kx8 Ultra Low Power Industrial (-40oC to +85oC) Automotive (-40oC to +125oC) Standby Current 4 mA 18 mA Typical value 0.6 mA Operating Current 8 mA 12 mA Typical value 4 mA BEST in the INDUSTRY! Data Retention Current 4 mA 18 mA Typical value 0.5 mA TSOP-I (32 pins) sTSOP (32 pins) SOP (32 pins) BGA (36 pins) TSOP-I (32 pins) sTSOP (32 pins) SOP (32 pins) BGA (36 pins) Lead-free and Leaded, RoHS Compliant 45 ns** 45 ns ** 35ns Refer to datasheet Temperature Support Packaging Speed 1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • [email protected] • www.issi.com Industrial Grade Memory Products Mobile SDRAMs - Ideal for Power Sensitive Applications ISSI’s Low Power Mobile SDRAMs are ideal for applications where both high performance and low power consumption are important. Power Saving Features Special Mobile Features*3 Ultra-low Standby Current *2 Low Operating Current*1 Lower VDD 2.5V or 1.8V Lower VDD 1.8V Synchronous Operation Synchronous Operation Synchronous Operation 3.3V SDRAMs Low Voltage SDRAMs Mobile SDRAMs *1. Mobile SDRAM Operating Current typically 33-50% lower than standard SDRAM *2. Mobile SDRAM Standby Current typically 90% lower than standard SDRAM *3. Special Mobile Features reduce power even more ! Mobile Features Temperature Compensated Self Refresh (TCSR) Adjust refresh rate based on temperature to minimize power consumption at lower temperatures Partial Array Self Refresh (PASR) Eliminates unnecessary refresh to minimize power Deep Power Down (DPD) Lowest power state when data retention is not required Drive Strength (DS) Adjust output drive to actual bus loading to minimize power Chipset Support for Memory Types SRAM Chipset FPGA Asynch. Synch Pseudo SDR/DDR LP DDR DDR2 RLDRAM Low-Mid End ■ ■ ■ ■ ■ ■ ■ High End ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ASIC MCU DRAM Low-End (no DRC) ■ ■ High End ■ ■ ■ ■ ■ MPU ■ ■ ■ ■ ■ ■ DSP ■ ■ ■ ■ ■ ■ Network Processor ■ ■ ■ 1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • [email protected] • www.issi.com Industrial Grade Memory Products Ordering Information for ISSI SRAM Devices IS 61 WV 12816 DBLL – 10 T L I – TR ISSI prefix Packing Option Product Family Temperature Grade Operating Voltage Range/Product Type Solder Type Density/Configuration Package Code Die Rev/Voltage Range Speed (ns or MHz) SRAM Product Family 61/63 = High Speed 62 = Low Power 64 = Automotive High Speed 65 = Automotive Low Power 66 = Pseudo SRAM 67 = Automotive PSRAM Die Rev/Voltage Range Die Rev Blank-Z Voltage Range (WV) ALL = 1.65V to 2.2V BLL = 2.5V to 3.6V Density/Configuration Example: 25636 = 256Kx36 51216 = 512Kx16 1M36 = 1Mx36 C = 5V LV = 3.3V WV = Wide Voltage Range Solder Type Blank = SnPb L = Lead-free (RoHS Compliant) Packing Option Blank = Tray or Tube TR = Tape & Reel Temperature Grade Blank = Commercial (0°C to 70°C) I = Industrial (-40°C to 85°C) A1 = Automotive (-40°C to 85°C) Operating Voltage Range/ Product Type A2 = Automotive (-40°C to 105°C) A3 = Automotive (-40°C to 125°C) Asynchronous SRAM Synchronous SRAM P = Pipeline, F = Flowthrough NLP/NLF/NVP/NVF = No-Wait Option LP/LF: Vcc = 3.3V, VccQ = 3.3V/2.5V VP/VF: Vcc = 2.5V, VccQ = 2.5V QD = QUAD, DD = DDR-II Common I/O: Vcc = 1.8V , VccQ = 1.8V/1.5V Package Code B, B1, B2, B3 = BGA CT = Copper TSOP H = sTSOP J = 300-mil SOJ K = 400-mil SOJ LQ = LQFP M, M3, = BGA Q = SOP T/T2 = TSOP TQ = TQFP U = SOP Speed (ns or MHz) Example: 8 = 8ns 200 = 200MHz Ordering Information for ISSI DRAM Devices IS 45 S 16 160 D – 7 B L A2 – TR ISSI prefix Product Family Operating Voltage Range/Product Type Speed Packing option Temperature Grade Solder type DRAM Product Family Bus Width Packing Option Die rev. 41 = Asynchronous Blank = trays Package Code No. of Words 42 = SDR Commercial/Industrial grade TR = Tape & Reel 43 = DDR & DDR2 Commercial/Industrial grade Solder Type Package Code 45 = SDR Automotive grade Blank = SnPb Die revision B = BGA 46 = DDR & DDR2 Automotive grade Blank-Z CT = Copper TSOP N = NiPdAu plating (RoHS Compliant) 49 = RLDRAM L = 100% matte Sn for non-BGA (RoHS Compliant) T = TSOP Operating Voltage Range/Product Type L = SnAgCu for BGA (RoHS Compliant) Speed (clock cycle time) Asynchronous: Fast Page and EDO Temperature Grade -4 = Up to 250Mhz C = 5V Bus Width Blank = Commercial (0oC to +70oC) LV = 3.3V -5 = Up to 200Mhz 8 = x8 I = Industrial (-40oC to +85oC) -6 = Up to 166Mhz 16 = x16 Synchronous A1 = Automotive (-40oC to +85oC) -7 = Up to 143Mhz 32 = x32 S = 3.3V SDR A2 = Automotive (-40oC to +105oC) -75E = Up to 133Mhz @ CL = 2 SM = 3.3V mobile SDR Number of Words DDR2 only RM = 2.5V mobile SDR -5B = DDR2-400B (up to 200Mhz @ CL = 3) 100 = 1M VM = 1.8V mobile SDR -37C = DDR2-533C (up to 266Mhz @ CL = 4) 200 = 2M VS = 1.8V SDR -3D = DDR2-667D (up to 333Mhz @ CL = 5) … R = 2.5V DDR or 2.5V SDR -25E = DDR2-800E (up to 400Mhz @ CL = 6) 160 = 16M LR =1.8V mobile DDR -25D = DDR2-800D (up to 400Mhz @ CL = 5) 320 = 32M DR =1.8V DDR2 1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • [email protected] • www.issi.com