MIMMG50W120XB6TN

MIMMG50W120XB6TN
1200V 50A PIM Module
RoHS Compliant
FEATURES
□ High level of integration—only one power semiconductor
module required for the whole drive
□ Low saturation voltage and positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
□ Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
□ Temperature sense included
APPLICATIONS
□ AC motor control
□ Motion/servo control
□ Inverter and power supplies
PIM Three Phase Input Rectifier
INVERTER SECTOR
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
1200
V
±20
V
TC=25°C
75
A
TC=80°C
50
A
tp=1ms
100
A
260
W
TVj=25°C
1200
V
TC=25°C
75
A
TC=80°C
50
A
tp=1ms
100
A
TVj =125°C, t=10ms, VR=0V
680
A2s
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TVj=25°C
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
2
It
MIMMG50W120XB6TN
INVERTER SECTOR
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
5.0
5.8
6.5
V
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=2.0mA
Collector - Emitter
IC=50A, VGE=15V, TVj=25°C
1.7
V
Saturation Voltage
IC=50A, VGE=15V, TVj=125°C
1.9
V
VCE=1200V, VGE=0V, TVj=25°C
1
mA
VCE=1200V, VGE=0V, TVj=125°C
10
mA
400
nA
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
Junction-to-Case Thermal Resistance
VCE=0V,VGE±15V, TVj=125°C
VCE=600V, IC=50A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
-400
4.0
Ω
0.47
µC
3.6
nF
0.16
nF
VCC=600V,IC=50A,
TVj =25°C
90
ns
RG =18Ω,
TVj =125°C
90
ns
VGE=±15V,
TVj =25°C
30
ns
Inductive Load
TVj =125°C
50
ns
VCC=600V,IC=50A,
TVj =25°C
420
ns
RG =18Ω,
TVj =125°C
520
ns
VGE=±15V,
TVj =25°C
70
ns
Inductive Load
TVj =125°C
90
ns
VCC=600V,IC=80A,
TVj =25°C
4.9
mJ
RG =18Ω,
TVj =125°C
6.6
mJ
VGE=±15V,
TVj =25°C
4.0
mJ
Inductive Load
TVj =125°C
4.9
mJ
200
A
tpsc≤10µS , VGE=15V
TVj=125°C,VCC=900V
（ Per IGBT）
0.48
K /W
Diode
IF=50A , VGE=0V, TVj =25°C
1.65
V
IF=50A , VGE=0V, TVj =125°C
1.65
V
Reverse Recovery Time
IF=50A , VR=600V
275
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-1200A/μs
50
A
Erec
Reverse Recovery Energy
TVj =125°C
4.4
mJ
RthJCD
Junction-to-Case Thermal Resistance （ Per Diode）
VF
Forward Voltage
trr
0.78
K /W
MIMMG50W120XB6TN
DIODE-RECTIFIER SECTOR
ABSOLUTE MAXIMUM RATINGS
Symbol
TC=25°C unless otherwise specified
Parameter
Test Conditions
Values
Unit
VRRM
Repetitive Reverse Voltage
TVj=25°C
1600
V
IF(AV)
Average Forward Current
TC=80°C
50
A
Non-Repetitive Surge
TVj =45°C, t=10ms, 50Hz
350
A
Forward Current
TVj =45°C, t=8.3ms, 60Hz
385
A
TVj =45°C, t=10ms, 50Hz
612
2
As
TVj =45°C, t=8.3ms, 60Hz
741
A2s
IFSM
I2 t
DIODE-RECTIFIER SECTOR
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
IF=50A , TVj =25°C
1.1
V
IF=50A , TVj =125°C
1.05
V
VF
Forward Voltage
IR
Reverse Leakage Current
RthJCD
Junction-to-Case Thermal Resistance （ Per Diode）
VR=1600V, TVj=25°C
50
µA
VR=1600V, TVj=125°C
1
mA
0.68
K /W
BRAKE-CHOPPER SECTOR
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
1200
V
±20
V
TC=25°C
55
A
TC=80°C
40
A
tp=1ms
80
A
195
W
TVj=25°C
1200
V
TC=25°C
25
A
TC=80°C
15
A
tp=1ms
30
A
TVj =125°C, t=10ms, VR=0V
60
A2s
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TVj=25°C
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
2
It
MIMMG50W120XB6TN
BRAKE-CHOPPER SECTOR
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
5.0
5.8
6.5
V
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=1.5mA
Collector - Emitter
IC=40A, VGE=15V, TVj=25°C
1.8
V
Saturation Voltage
IC=40A, VGE=15V, TVj=125°C
2.05
V
VCE=1200V, VGE=0V, TVj=25°C
0.25
µA
VCE=1200V, VGE=0V, TVj=125°C
2
mA
400
nA
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
Junction-to-Case Thermal Resistance
VCE=0V,VGE±15V, TVj=125°C
VCE=600V, IC=40A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
-400
6
Ω
0.33
µC
2.5
nF
0.11
nF
VCC=600V,IC=40A,
TVj =25°C
90
ns
RG =27Ω,
TVj =125°C
90
ns
VGE=±15V,
TVj =25°C
30
ns
Inductive Load
TVj =125°C
50
ns
VCC=600V,IC=40A,
TVj =25°C
420
ns
RG =27Ω,
TVj =125°C
520
ns
VGE=±15V,
TVj =25°C
70
ns
Inductive Load
TVj =125°C
90
ns
VCC=600V,IC=40A,
TVj =25°C
4.1
mJ
RG =27Ω,
TVj =125°C
6.0
mJ
VGE=±15V,
TVj =25°C
3.1
mJ
Inductive Load
TVj =125°C
3.6
mJ
160
A
tpsc≤10µS , VGE=15V
TVj=125°C,VCC=900V
（ Per IGBT）
0.62
K /W
Diode
IF=15A , VGE=0V, TVj =25°C
1.65
V
IF=15A , VGE=0V, TVj =125°C
1.75
V
Reverse Recovery Time
IF=15A , VR=600V
150
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-400A/μs
15
A
Erec
Reverse Recovery Energy
TVj =125°C
1.15
mJ
RthJCD
Junction-to-Case Thermal Resistance （ Per Diode）
VF
Forward Voltage
trr
1.55
K /W
MIMMG50W120XB6TN
NTC SECTOR
CHARACTERISTIC VALUES
Symbol
R25
TC=25°C unless otherwise specified
Parameter
Resistance
Test Conditions
Min.
TC =25°C
B25/50
MODULE CHARACTERISTICS
Symbol
Typ.
Max.
Unit
5
KΩ
3375
K
TC=25°C unless otherwise specified
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
150
°C
TVj max
Max. Junction Temperature
TVj op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Md
Mounting Torque
AC, t=1min
3000
V
250
Recommended（M5）
Weight
2.5
5
300
100
N· m
g
100
VGE =15V
80
TVj =25°C
60
IC (A)
IC (A)
80
40
TVj =125°C
20
0
0
60
TVj =125°C
40
20
1.5 2.0 2.5 3.0 3.5
VCE（V）
Figure1. Typical Output Characteristics
IGBT-inverter
0.5
1.0
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE（V）
Figure2. Typical Output Characteristics
IGBT-inverter
MIMMG50W120XB6TN
12
100
VCE =20V
10
TVj =25°C
IC (A)
40
TVj =125°C
Eon Eoff (mJ)
80
60
20
5
Eon
6
4
6
0
Eoff
30
40
20
RG（Ω）
Figure4. Switching Energy vs. Gate Resistor
IGBT-inverter
9
10
11 12
8
VGE（V）
Figure3. Typical Transfer characteristics
IGBT-inverter
20
7
0
10
120
VCE=600V
RG=18Ω
VGE=±15V
TVj =125°C
16
100
80
12
IC (A)
Eon Eoff (mJ)
8
2
0
Eon
8
60
RG=18Ω
VGE=±15V
TVj =125°C
40
Eoff
4
20
0
0
0
600 800 1000 1200 1400
VCE（V）
Figure6. Reverse Biased Safe Operating Area
IGBT-inverter
20
40
60
80
100
IC（A）
Figure5. Switching Energy vs. Collector Current
IGBT-inverter
0
200
400
8.0
100
80
IF=50A
VCE=600V
TVj =125°C
Erec (mJ)
6.0
60
IF (A)
VCE=600V
IC=50A
VGE=±15V
TVj =125°C
4.0
40
TVj =125°C
2.0
20
TVj =25°C
0
0
1.0
2.0
2.5
1.5
VF（V）
Figure7. Diode Forward Characteristics
Diode -inverter
0.5
0
0
10
20
30
40
RG（Ω）
Figure8. Switching Energy vs. Gate Resistor
Diode -inverter
MIMMG50W120XB6TN
1
8.0
RG=18Ω
VCE=600V
TVj =125°C
IGBT
ZthJC (K/W)
Erec (mJ)
6.0
Diode
4.0
0.1
2.0
0
0
40
20
60
80
100
IF (A)
Figure9. Switching Energy vs. Forward Current
Diode-inverter
0.01
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance of
Diode and IGBT-inverter
100
80
VGE =15V
75
60
50
IC (A)
IF (A)
TVj =25°C
TVj =125°C
40
TVj =125°C
25
20
TVj =25°C
0
0
0
0
0.6 0.8 1.0 1.2 1.4
VF（V）
Figure11. Diode Forward Characteristics
Diode- rectifier
0.2
0.4
1.0
100000
30
IFGE
=25=15V
A
V
VCE=600V
TVj =125°C
25
20
10000
TVj =25°C
15
10
TVj =25°C
R (Ω)
IF (A)
1.5 2.0 2.5 3.0 3.5
VCE（V）
Figure12. Typical Output Characteristics
IGBT- brake chopper
0.5
TVj =125°C
R
TVj =125°C
1000
5
0
0
1.2 1.6 2.0 2.4 2.8
VF（V）
Figure13. Diode Forward Characteristics
Diode - brake chopper
0.4
0.8
100
0
20
60 80 100 120 140 160
TC（°C）
Figure14. NTC Characteristics
40
MIMMG50W120XB6TN
Figure15. Circuit Diagram
Dimensions (mm)
Figure16. Package Outline