MIMMG150S120B6TN

MIMMG150S120B6TN
1200V 150A IGBT Module
RoHS Compliant
FEATURES
□ High short circuit capability,self limiting short circuit current
3
□ IGBT CHIP(Trench+Field Stop technology)
□ VCE(sat) with positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
□ Low switching losses
APPLICATIONS
GS Series Module
□ High frequency switching application
□ Medical applications
□ Motion/servo control
□ UPS systems
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
1200
V
±20
V
TC=25°C
200
A
TC=80°C
150
A
tp=1ms
300
A
625
W
TVj=25°C
1200
V
TC=25°C
200
A
TC=80°C
150
A
tp=1ms
300
A
TVj =125°C, t=10ms, VR=0V
4350
A2 s
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TVj=25°C
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
2
It
MIMMG150S120B6TN
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
5.0
5.8
6.5
V
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=6mA
Collector - Emitter
IC=150A, VGE=15V, TVj=25°C
1.7
V
Saturation Voltage
IC=150A, VGE=15V, TVj=125°C
1.9
V
VCE=1200V, VGE=0V, TVj=25°C
1
mA
VCE=1200V, VGE=0V, TVj=125°C
5
mA
400
nA
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
Junction-to-Case Thermal Resistance
VCE=0V,VGE±15V, TVj=125°C
VCE=600V, IC=150A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
-400
5
Ω
1.4
µC
10.5
nF
0.4
nF
VCC=600V,IC=150A,
TVj =25°C
260
ns
RG =2.4Ω,
TVj =125°C
290
ns
VGE=±15V,
TVj =25°C
30
ns
Inductive Load
TVj =125°C
50
ns
VCC=600V,IC=150A,
TVj =25°C
420
ns
RG =2.4Ω,
TVj =125°C
520
ns
VGE=±15V,
TVj =25°C
70
ns
Inductive Load
TVj =125°C
90
ns
VCC=600V,IC=150A,
TVj =25°C
12
mJ
RG =2.4Ω,
TVj =125°C
16
mJ
VGE=±15V,
TVj =25°C
11
mJ
Inductive Load
TVj =125°C
14.5
mJ
600
A
tpsc≤10µS , VGE=15V
TVj=125°C,VCC=900V
（ Per IGBT）
0.2
K /W
Diode
IF=150A , VGE=0V, TVj =25°C
1.65
V
IF=150A , VGE=0V, TVj =125°C
1.65
V
Max. Reverse Recovery Current
IF=150A , VR=600V
210
A
Qrr
Reverse Recovery Charge
diF/dt=-4000A/μs
30.0
µC
Erec
Reverse Recovery Energy
TVj=125°C
13
mJ
RthJCD
Junction-to-Case Thermal Resistance （ Per Diode）
VF
Forward Voltage
IRRM
0.36
K /W
MIMMG150S120B6TN
MODULE CHARACTERISTICS
Symbol
TC=25°C unless otherwise specified
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
150
°C
TVj max
Max. Junction Temperature
TVj op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M5）
2.5
5
N· m
AC, t=1min
3000
V
350
Weight
160
300
g
300
VGE =15V
240
TVj =25°C
180
IC (A)
IC (A)
240
120
TVj =125°C
180
120
60
60
0
0
0
1.5 2.0 2.5 3.0 3.5
VCE（V）
Figure1. Typical Output Characteristics
0.5
1.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE（V）
Figure2. Typical Output Characteristics
35
300
VCE =20V
VCE=600V
IC=150A
VGE=±15V
TVj =125°C
30
240
25
TVj =25°C
180
120
TVj =125°C
Eon Eoff (mJ)
IC (A)
TVj =125°C
Eon
20
15
Eoff
10
60
0
5
5
6
7
9
10
8
11 12
VGE（V）
Figure3. Typical Transfer characteristics
0
0
2
10 12 14 16
8
RG（Ω）
Figure4. Switching Energy vs. Gate Resistor
4
6
MIMMG150S120B6TN
40
30
300
250
Eon
200
20
Eoff
IC (A)
Eon Eoff (mJ)
350
VCE=600V
RG=2.4Ω
VGE=±15V
TVj =125°C
150
RG=2.4Ω
VGE=±15V
TVj =125°C
100
10
50
0
0
0
600 800 1000 1200 1400
VCE（V）
Figure6. Reverse Biased Safe Operating Area
100
50
150 200 250 300
IC（A）
Figure5. Switching Energy vs. Collector Current
20.0
240
16.0
Erec (mJ)
300
IF (A)
180
0
200 400
IF=150A
VCE=600V
TVj =125°C
12.0
8.0
120
TVj =125°C
4.0
60
TVj =25°C
0
0
0
1.2
1.8
2.4
VF（V）
Figure7. Diode Forward Characteristics
0.6
20.0
4
6
1
RG=2.4Ω
VCE=600V
TVj =125°C
Diode
ZthJC (K/W)
16.0
Erec (mJ)
2
8 10 12 14 16
RG（Ω）
Figure8. Switching Energy vs. Gate Resistor
0
12.0
8.0
0.1
IGBT
4.0
0
0
50
100
150 200 250 300
IF (A)
Figure9. Switching Energy vs. Forward Current
0.01
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance
MIMMG150S120B6TN
Figure11. Circuit Diagram
Dimensions (mm)
Figure12. Package Outline