MIMMG75HB120H6UN

MIMMG75HB120H6UN
1200V 75A Four-Pack Module
RoHS Compliant
FEATURES
□ High short circuit capability,self limiting short circuit current
□ IGBT CHIP(1200V NPT technology)
□ VCE(sat) with positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
□ Low switching losses
APPLICATIONS
□ High frequency switching application
□ Medical applications
□ Motion/servo control
□ UPS systems
INVERTER SECTOR
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
1200
V
±20
V
TC=25°C
100
A
TC=65°C
75
A
tp=1ms
150
A
480
W
TVj=25°C
1200
V
TC=25°C
100
A
TC=65°C
75
A
tp=1ms
150
A
TVj =125°C, t=10ms, VR=0V
2400
A2 s
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TVj=25°C
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2 t
MIMMG75HB120H6UN
INVERTER SECTOR
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
4.5
5.5
6.5
V
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=3.0mA
Collector - Emitter
IC=75A, VGE=15V, TVj=25°C
3.2
V
Saturation Voltage
IC=75A, VGE=15V, TVj=125°C
3.85
V
VCE=1200V, VGE=0V, TVj=25°C
1
mA
VCE=1200V, VGE=0V, TVj=125°C
10
mA
400
nA
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
Junction-to-Case Thermal Resistance
VCE=0V,VGE±15V, TVj=125°C
VCE=600V, IC=75A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
-400
5
Ω
0.8
µC
5.1
nF
0.32
nF
VCC=600V,IC=75A,
TVj =25°C
120
ns
RG =7.5Ω,
TVj =125°C
130
ns
VGE=±15V,
TVj =25°C
50
ns
Inductive Load
TVj =125°C
60
ns
VCC=600V,IC=75A,
TVj =25°C
310
ns
RG =7.5Ω,
TVj =125°C
360
ns
VGE=±15V,
TVj =25°C
20
ns
Inductive Load
TVj =125°C
30
ns
VCC=600V,IC=75A,
TVj =25°C
5
mJ
RG =7.5Ω,
TVj =125°C
9
mJ
VGE=±15V,
TVj =25°C
2.6
mJ
Inductive Load
TVj =125°C
3.8
mJ
450
A
tpsc≤10µS , VGE=15V
TVj=125°C,VCC=900V
（ Per IGBT）
0.26
K /W
Diode
IF=75A , VGE=0V, TVj =25°C
2.0
V
IF=75A , VGE=0V, TVj =125°C
2.05
V
Reverse Recovery Time
IF=75A , VR=600V
145
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-2000A/μs
95
A
Erec
Reverse Recovery Energy
TVj =125°C
3.8
mJ
RthJCD
Junction-to-Case Thermal Resistance （ Per Diode）
VF
Forward Voltage
trr
0.56
K /W
MIMMG75HB120H6UN
NTC SECTOR
CHARACTERISTIC VALUES
Symbol
R25
TC=25°C unless otherwise specified
Parameter
Test Conditions
Resistance
Min.
TC =25°C
B25/50
MODULE CHARACTERISTICS
Symbol
Typ.
Max.
Unit
5
KΩ
3375
K
TC=25°C unless otherwise specified
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
150
°C
TVj max
Max. Junction Temperature
TVj op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M5）
2.5
5
N· m
AC, t=1min
3000
V
250
Weight
200
150
g
150
VGE =15V
120
TVj =25°C
90
60
IC (A)
IC (A)
120
TVj =125°C
30
0
0
90
TVj =125°C
60
30
4
3
5
6
VCE（V）
Figure1. Typical Output Characteristics
IGBT-inverter
1
2
0
0
1
2
3
4
5
6
VCE（V）
Figure2. Typical Output Characteristics
IGBT-inverter
MIMMG75HB120H6UN
35
150
VCE =20V
30
120
IC (A)
90
TVj =25°C
Eon Eoff (mJ)
25
TVj =125°C
60
20
15
5
0
5
6
0
7
21
0
10
20
175
VCE=600V
RG=7.5Ω
VGE=±15V
TVj =125°C
24
Eoff
50
60
40
70
30
RG（Ω）
Figure4. Switching Energy vs. Gate Resistor
IGBT-inverter
9
10
11 12
8
VGE（V）
Figure3. Typical Transfer characteristics
IGBT-inverter
27
150
125
18
100
15
12
IC (A)
Eon Eoff (mJ)
Eon
10
30
Eon
9
75
RG=7.5Ω
VGE=±15V
TVj =125°C
50
6
Eoff
3
0
0
25
25
0
600 800 1000 1200 1400
VCE（V）
Figure6. Reverse Biased Safe Operating Area
IGBT-inverter
50
75
100 125 150
IC（A）
Figure5. Switching Energy vs. Collector Current
IGBT-inverter
5
120
4
Erec (mJ)
150
90
IF (A)
VCE=600V
IC=75A
VGE=±15V
TVj =125°C
0
200 400
IF=75A
VCE=600V
TVj =125°C
3
2
60
TVj =125°C
30
0
TVj =25°C
0
4
2
3
VF（V）
Figure7. Diode Forward Characteristics
Diode -inverter
1
1
0
0
10
20
30
40
50
RG（Ω）
Figure8. Switching Energy vs. Gate Resistor
Diode -inverter
MIMMG75HB120H6UN
1
6
RG=7.5Ω
VCE=600V
TVj =125°C
5
Diode
ZthJC (K/W)
3
IGBT
0.1
2
1
0
0
0.01
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance of
Diode and IGBT-inverter
125 150
75
100
IF (A)
Figure9. Switching Energy vs. Forward Current
Diode-inverter
25
50
100000
IFGE
=25=15V
A
V
VCE=600V
TVj =125°C
10000
R (Ω)
Erec (mJ)
4
R
1000
100
0
20
60 80 100 120 140 160
TC（°C）
Figure11. NTC Characteristics
40
MIMMG75HB120H6UN
Figure12. Circuit Diagram
Dimensions (mm)
Figure13. Package Outline