MIMMG150D120B6UN

MIMMG150D120B6UN
1200V 150A IGBT Module
RoHS Compliant
FEATURES
□ High short circuit capability,self limiting short circuit current
□ IGBT CHIP(1200V NPT technology)
□ VCE(sat) with positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
□ Low switching losses
APPLICATIONS
□ High frequency switching application
GD Series Module
□ Medical applications
□ Motion/servo control
□ UPS systems
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
1200
V
±20
V
TC=25°C
225
A
TC=75°C
150
A
tp=1ms
300
A
1250
W
TVj=25°C
1200
V
TC=25°C
225
A
TC=75°C
150
A
tp=1ms
300
A
TVj =125°C, t=10ms, VR=0V
4500
A2 s
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TVj=25°C
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2 t
MIMMG150D120B6UN
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
4.5
5.5
6.5
V
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=6.0mA
Collector - Emitter
IC=150A, VGE=15V, TVj=25°C
3.2
V
Saturation Voltage
IC=150A, VGE=15V, TVj=125°C
3.85
V
VCE=1200V, VGE=0V, TVj=25°C
2
mA
VCE=1200V, VGE=0V, TVj=125°C
10
mA
400
nA
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
Junction-to-Case Thermal Resistance
VCE=0V,VGE±15V, TVj=125°C
VCE=600V, IC=150A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
-400
2.5
Ω
1.6
µC
11
nF
0.5
nF
VCC=600V,IC=150A,
TVj =25°C
100
ns
RG =6.8Ω,
TVj =125°C
110
ns
VGE=±15V,
TVj =25°C
60
ns
Inductive Load
TVj =125°C
70
ns
VCC=600V,IC=150A,
TVj =25°C
530
ns
RG =6.8Ω,
TVj =125°C
550
ns
VGE=±15V,
TVj =25°C
30
ns
Inductive Load
TVj =125°C
40
ns
VCC=600V,IC=150A,
TVj =25°C
9
mJ
RG =6.8Ω,
TVj =125°C
14.5
mJ
VGE=±15V,
TVj =25°C
7
mJ
Inductive Load
TVj =125°C
11
mJ
950
A
tpsc≤10µS , VGE=15V
TVj=125°C,VCC=900V
（ Per IGBT）
0.1
K /W
Diode
IF=150A , VGE=0V, TVj =25°C
2.0
V
IF=150A , VGE=0V, TVj =125°C
2.05
V
Reverse Recovery Time
IF=150A , VR=600V
250
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-3000A/μs
145
A
Erec
Reverse Recovery Energy
TVj =125°C
7.6
mJ
RthJCD
Junction-to-Case Thermal Resistance （ Per Diode）
VF
Forward Voltage
trr
0.25
K /W
MIMMG150D120B6UN
MODULE CHARACTERISTICS
Symbol
TC=25°C unless otherwise specified
Parameter
Test Conditions
Min.
Max.
Unit
150
°C
TVj max
Max. Junction Temperature
TVj op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M6）
2.5
5
N· m
AC, t=1min
3000
300
300
VGE =15V
200
250
200
TVj =25°C
IC (A)
IC (A)
g
400
250
150
100
TVj =125°C
TVj =125°C
150
100
50
50
0
0
0
2
3
4
5
6
VCE（V）
Figure1. Typical Output Characteristics
1
0
60
300
VCE =20V
200
TVj =125°C
150
TVj =25°C
100
1
3
4
5
6
VCE（V）
Figure2. Typical Output Characteristics
2
VCE=600V
IC=150A
VGE=±15V
TVj =125°C
50
Eon Eoff (mJ)
250
40
Eon
30
20
10
50
0
V
350
Weight
IC (A)
Typ.
5
6
7
9
10
8
11 12
VGE（V）
Figure3. Typical Transfer characteristics
0
Eoff
0
5
10
25
30
20
15
RG（Ω）
Figure4. Switching Energy vs. Gate Resistor
MIMMG150D120B6UN
45
40
35
300
250
30
25
200
Eon
IC (A)
Eon Eoff (mJ)
350
VCE=600V
RG=6.8Ω
VGE=±15V
TVj =125°C
20
15
150
Eoff
10
50
5
0
0
0
600 800 1000 1200 1400
VCE（V）
Figure6. Reverse Biased Safe Operating Area
150
200
250 300
IC（A）
Figure5. Switching Energy vs. Collector Current
100
50
240
Erec (mJ)
IF (A)
TVj =125°C
6
120
4
60
2
0
200 400
IF=150A
VCE=600V
TVj =125°C
8
TVj =25°C
180
0
2
3
4
VF（V）
Figure7. Diode Forward Characteristics
1
0
5
10
15
20
25
30
RG（Ω）
Figure8. Switching Energy vs. Gate Resistor
12
1
RG=6.8Ω
VCE=600V
TVj =125°C
10
Diode
ZthJC (K/W)
8
Erec (mJ)
0
10
300
0
RG=6.8Ω
VGE=±15V
TVj =125°C
100
6
4
0.1
IGBT
0.01
2
0
0
50
150 200 250
300
IF (A)
Figure9. Switching Energy vs. Forward Current
100
0.001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance
MIMMG150D120B6UN
Figure11. Circuit Diagram
M6
8.5
30.0
30.5
2.8x0.5
22.0
93.0
6.0
Φ6.5
2
28.0
3
28.0
20.0
108.0
Dimensions (mm)
Figure12. Package Outline
62.0
15.0
6.0
1
4 5
48.0
16.0
7 6
6.0
18