HMC592


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term product support
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HMC592
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HMC592
v02.0109
Typical Applications
Features
The HMC592 is ideal for use as a power amplifier for:
Saturated Output Power:
+31 dBm @ 21% PAE
• Point-to-Point Radios
3
Output IP3: +38 dBm
• Point-to-Multi-Point Radios
Gain: 19 dB
• Test Equipment & Sensors
DC Supply: +7V @ 750 mA
• Military End-Use
LINEAR & POWER AMPLIFIERS - CHIP
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10 - 13 GHz
50 Ohm Matched Input/Output
• Space
Die Size: 2.47 x 1.17 x 0.1 mm
Functional Diagram
General Description
The HMC592 is a high dynamic range GaAs PHEMT
MMIC 1 Watt Power Amplifier which operates from
10 to 13 GHz. This amplifier die provides 19 dB of
gain and +31 dBm of saturated power, at 21% PAE
from a +7V supply. The RF I/Os are DC blocked and
matched to 50 Ohms for ease of integration into MultiChip-Modules (MCMs). All data is taken with the chip
in a 50 ohm test fixture connected via 0.025mm (1
mil) diameter wire bonds of length 0.31mm (12 mils).
For applications which require optimum OIP3, Idd
should be set for 400 mA, to yield +38 dBm OIP3. For
applications which require optimum output P1dB, Idd
should be set for 750 mA, to yield +31 dBm Output
P1dB.
Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 750 mA*
Parameter
Min.
Frequency Range
Typ.
Max.
10 - 13
Gain
16
GHz
19
dB
0.05
dB/ °C
Input Return Loss
10
dB
Output Return Loss
12
dB
31
dBm
31.2
dBm
Gain Variation Over Temperature
Output Power for 1 dB
Compression (P1dB)
28
Saturated Output Power (Psat)
Output Third Order Intercept
(IP3)[2]
Supply Current (Idd)
38
750
dBm
800
[1] Adjust Vgg between -2 to 0V to achieve Idd= 750 mA typical.
[2] Measurement taken at 7V @ 400mA, Pin / Tone = -15 dBm
3 - 86
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC592
v02.0109
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10 - 13 GHz
Gain vs. Temperature
30
28
25
26
20
24
15
22
S21
S11
S22
5
0
-5
18
16
14
-10
12
-15
10
-20
8
-25
3
20
+25C
+85C
-55C
6
7
8
9
10
11
12
13
14
15
9
9.5
10
FREQUENCY (GHz)
0
-5
-5
-10
-15
+25C
+85C
-55C
11.5
12
12.5
13
-10
-15
+25C
+85C
-55C
-20
-25
-25
8
9
10
11
12
13
14
8
9
10
FREQUENCY (GHz)
12
13
14
Psat vs. Temperature
33
31
31
Psat (dBm)
33
29
+25C
+85C
-55C
27
11
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB (dBm)
11
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
RETURN LOSS (dB)
Input Return Loss vs. Temperature
-20
10.5
FREQUENCY (GHz)
25
LINEAR & POWER AMPLIFIERS - CHIP
10
GAIN (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
29
+25C
+85C
-55C
27
25
23
23
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
12
12.5
13
9
9.5
10
10.5
11
11.5
12
12.5
13
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 87
HMC592
v02.0109
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10 - 13 GHz
Psat vs. Current
33
31
31
Psat (dBm)
33
29
27
400mA
500mA
600mA
700mA
750mA
25
400mA
500mA
600mA
700mA
750mA
27
23
9
9.5
10
10.5
11
11.5
12
12.5
13
9
9.5
10
FREQUENCY (GHz)
Output IP3 vs. Temperature
7V @ 400 mA, Pin/Tone = -15 dBm
11
11.5
12
12.5
13
Power Compression @ 8 GHz, 7V @ 750 mA
35
Pout(dBm), GAIN (dB), PAE(%)
44
40
36
+25C
+85C
-55C
32
28
24
9
9.5
10
10.5
11
11.5
12
12.5
30
20
15
10
5
0
-14
13
Pout
Gain
PAE
25
-9
-4
FREQUENCY (GHz)
6
11
16
Output IM3, 7V @ 750 mA
90
90
IM3 (dBc)
60
45
45
30
30
15
15
-16
-12
-8
-4
Pin/Tone (dBm)
0
4
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
75
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
60
0
-20
1
INPUT POWER (dBm)
Output IM3, 7V @ 400 mA
IM3 (dBc)
10.5
FREQUENCY (GHz)
75
3 - 88
29
25
23
IP3 (dBm)
LINEAR & POWER AMPLIFIERS - CHIP
3
P1dB (dBm)
P1dB vs. Current
8
0
-20
-16
-12
-8
-4
0
Pin/Tone (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4
8
HMC592
v02.0109
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10 - 13 GHz
Gain & Power vs. Supply Current @ 8 GHz
Gain & Power vs. Supply Voltage @ 8 GHz
36
32
28
Gain
P1dB
Psat
24
20
16
12
400
450
500
550
600
650
700
32
Gain
P1dB
Psat
24
20
16
12
6.5
750
7
Idd SUPPLY CURRENT (mA)
7.5
Vdd SUPPLY VOLTAGE (Vdc)
Power Dissipation
Reverse Isolation vs. Temperature
6
0
-10
Power Dissipation (W)
5.5
-20
ISOLATION (dB)
3
28
+25C
+85C
-55C
-30
-40
-50
-60
5
4.5
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
4
3.5
-70
-80
9
9.5
10
10.5
11
11.5
FREQUENCY (GHz)
12
12.5
13
3
-14
-10
-6
-2
2
6
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10
14
LINEAR & POWER AMPLIFIERS - CHIP
GAIN (dB), P1dB (dBm), Psat(dBm)
GAIN (dB), P1dB (dBm), Psat(dBm)
36
3 - 89
HMC592
v02.0109
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
LINEAR & POWER AMPLIFIERS - CHIP
3
+8 Vdc
-2.0 to 0 Vdc
Vdd (V)
Idd (mA)
+6.5
757
Outline Drawing
RF Input Power (RFIN)(Vdd = +7.0 Vdc)
+15 dBm
+7.0
750
Channel Temperature
175 °C
+7.5
745
Continuous Pdiss (T= 85 °C)
(derate 62.7 mW/°C above 85 °C)
5.64 W
Thermal Resistance
(channel to die bottom)
15.94 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Note: Amplifi er will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 750 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3 - 90
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10 - 13 GHz
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC592
v02.0109
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10 - 13 GHz
Pad Descriptions
Function
Description
1
RFIN
This pad is AC coupled and
matched to 50 Ohms.
2, 4, 6
Vgg 1-3
Gate control for amplifier. Adjust to achieve Idd of 750 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
0.1 μF are required.
3, 5, 7
Vdd 1-3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
8
RFOUT
This pad is AC coupled and
matched to 50 Ohms.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3
LINEAR & POWER AMPLIFIERS - CHIP
Pad Number
3 - 91
HMC592
v02.0109
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10 - 13 GHz
Assembly Diagram
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 92
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC592
v02.0109
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10 - 13 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should
be clean and flat.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
3
LINEAR & POWER AMPLIFIERS - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 93