HMC590 v02.0109 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Typical Applications Features The HMC590 is ideal for use as a power amplifier for: Saturated Output Power: +31.5 dBm @ 25% PAE • Point-to-Point Radios Output IP3: +41 dBm • Point-to-Multi-Point Radios Gain: 24 dB • Test Equipment & Sensors DC Supply: +7V @ 820 mA • Military End-Use 50 Ohm Matched Input/Output • Space Die Size: 2.47 x 1.33 x 0.1 mm Functional Diagram General Description The HMC590 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 24 dB of gain, +31.5 dBm of saturated power at 25% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into MultiChip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 520 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 820 mA, to yield up to +32 dBm Output P1dB. Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 820 mA[1] Parameter Min. Frequency Range Typ. Max. Min. 6 - 10 Gain 21 Gain Variation Over Temperature 24 0.05 Typ. Max. 6.8 - 9 22 0.07 GHz 25 0.05 dB 0.07 dB/ °C Input Return Loss 10 10 dB Output Return Loss 10 10 dB 31.5 dBm 32 dBm 41 41 dBm 820 820 mA Output Power for 1 dB Compression (P1dB) 27 Saturated Output Power (Psat) Output Third Order Intercept (IP3)[2] Supply Current (Idd) 30 31.5 28.5 [1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical. [2] Measurement taken at 7V @ 520mA, Pin / Tone = -15 dBm 3 - 70 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Gain vs. Temperature Broadband Gain & Return Loss 34 30 25 30 15 5 3 26 S21 S11 S22 0 -5 22 18 +25C +85C -55C -10 -15 14 -20 10 -25 4 5 6 7 8 9 10 11 6 12 6.5 7 Input Return Loss vs. Temperature 8.5 9 9.5 10 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 8 Output Return Loss vs. Temperature 0 -10 -15 +25C +85C -55C -20 -10 -15 +25C +85C -55C -20 -25 -30 -25 4 5 6 7 8 9 10 11 12 4 5 6 FREQUENCY (GHz) 8 9 10 11 12 9 9.5 10 Psat vs. Temperature 35 33 33 Psat (dBm) 35 31 +25C +85C -55C 29 7 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 7.5 FREQUENCY (GHz) FREQUENCY (GHz) 27 LINEAR & POWER AMPLIFIERS - CHIP 10 GAIN (dB) RESPONSE (dBm) 20 31 +25C +85C -55C 29 27 25 25 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) 9 9.5 10 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 71 HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Psat vs. Current 35 33 33 31 29 520 mA 620 mA 720 mA 820 mA 31 520 mA 620 mA 720 mA 820 mA 29 27 25 25 6 6.5 7 7.5 8 8.5 9 9.5 10 6 6.5 7 7.5 FREQUENCY (GHz) 8.5 9 9.5 10 Power Compression @ 8 GHz, 7V @ 820 mA 35 Pout(dBm), GAIN (dB), PAE(%) 46 42 IP3 (dBm) 8 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 520 mA, Pin/Tone = -15 dBm 38 34 +25C +85C -55C 30 26 6 6.5 7 7.5 8 8.5 9 9.5 30 25 20 15 10 0 -14 10 Pout Gain PAE 5 -10 -6 FREQUENCY (GHz) 70 70 60 60 50 50 IM3 (dBc) 80 40 6GHz 7GHz 8GHz 9GHz 10GHz 10 0 -20 -16 -12 -8 2 6 10 14 Output IM3, 7V @ 820 mA 80 30 -2 INPUT POWER (dBm) Output IM3, 7V @ 520 mA 20 6GHz 7GHz 8GHz 9GHz 10GHz 40 30 20 10 -4 Pin/Tone (dBm) 3 - 72 Psat (dBm) 35 27 IM3 (dBc) LINEAR & POWER AMPLIFIERS - CHIP 3 P1dB (dBm) P1dB vs. Current 0 4 8 0 -20 -16 -12 -8 -4 0 Pin/Tone (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 8 HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Gain & Power vs. Supply Voltage @ 8 GHz Gain & Power vs. Supply Current @ 8 GHz 34 32 30 28 Gain P1dB Psat 26 24 22 20 6.5 7 32 28 Gain P1dB Psat 26 24 22 20 520 7.5 620 Vdd SUPPLY VOLTAGE (Vdc) 720 820 Idd SUPPLY CURRENT (mA) Reverse Isolation vs. Temperature, 7V @ 820 mA Power Dissipation 6 0 POWER DISSIPATION (W) -10 -20 ISOLATION (dB) 3 30 -30 +25C +85C -55C -40 -50 -60 -70 -80 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) 9 9.5 10 5.5 5 6GHz 7GHz 8GHz 9GHZ 10GHz 4.5 4 3.5 3 -14 -10 -6 -2 2 6 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 14 LINEAR & POWER AMPLIFIERS - CHIP GAIN (dB), P1dB (dBm), Psat(dBm) GAIN (dB), P1dB (dBm), Psat(dBm) 34 3 - 73 HMC590 v02.0109 Typical Supply Current vs. Vdd Absolute Maximum Ratings Drain Bias Voltage (Vdd) LINEAR & POWER AMPLIFIERS - CHIP 3 +8 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -2.0 to 0 Vdc +6.5 824 RF Input Power (RFIN)(Vdd = +7.0 Vdc) +12 dBm +7.0 820 Channel Temperature 175 °C +7.5 815 Continuous Pdiss (T= 85 °C) (derate 67 mW/°C above 85 °C) 6.0 W Thermal Resistance (channel to die bottom) 14.9 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifi er will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 820 mA at +7.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 74 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Pad Descriptions Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2 Vgg Gate control for amplifier. Adjust to achieve Idd of 820 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.1 μF are required. 3-5 Vdd 1-3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 6 RFOUT This pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 LINEAR & POWER AMPLIFIERS - CHIP Pad Number 3 - 75 HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Assembly Diagram LINEAR & POWER AMPLIFIERS - CHIP 3 3 - 76 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC590 v02.0109 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. 3 LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 77