Design Assistance Customised Pack Sizes / Qtys Assembly Assistance Support for all industry recognised supply formats: Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming o Waffle Pack o Gel Pak o Tape & Reel Onsite storage, stockholding & scheduling 100% Visual Inspection o MIL-STD 883 Condition A o MIL-STD 883 Condition A On-site failure analysis Bespoke 24 Hour monitored storage systems for secure long term product support On-site failure analysis Contact [email protected] For price, delivery and to place orders HMC-AUH232 www.analog.com www.micross.com Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC-AUH232 v02.0209 4 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz Typical Applications Features This HMC-AUH232 is ideal for: Small Signal Gain: 12 dB • 40 Gb/s Lithium Niobate/ Mach Zender Fiber Optic Modulators Output Voltage: up to 8V pk-pk • Broadband Gain Block for Test & Measurement Equipment High Speed Performance: 46 GHz 3 dB Bandwidth Single-Ended I/Os Low Power Dissipation: 0.9 W • Broadband Gain Block for RF Applications Small Die Size: 2.1 x 1.70 x 0.1 mm MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP • Military & Space 4-2 General Description Functional Diagram The HMC-AUH232 is a GaAs MMIC HEMT Distributed Driver Amplifier die which operates between DC and 43 GHz and provides a typical 3 dB bandwidth of 46 GHz. The amplifier provides 12 dB of small signal gain while requiring only 180 mA from a +5V supply. The HMC-AUH232 exhibits very good gain and phase ripple to 40 GHz, and can output up to 8V peak-to-peak with low jitter, making it ideal for use in broadband wireless, fiber optic communication and test equipment applications. The amplifier die occupies less than 3.6 mm2 which facilitates easy integration into Multi-Chip-Modules (MCMs). The HMC-AUH232 requires external bias-tee as well as off-chip blocking components and bypass capacitors for the DC supply lines. A gate voltage adjust, Vgg2 is provided for limited gain adjustment, while Vgg1 adjusts the bias current for the device. Electrical Specifi cations*, TA = +25 °C Parameter Min. Frequency Range Typ. Max. DC - 43 Units GHz 0.5 - 5.0 GHz 12 14 dB 35 - 45 GHz 10 12.5 dB 10 dB Small Signal Gain Input Return Loss Output Return Loss 8.5 Supply Current 180 3 dB Bandwidth 43 Gain Ripple (5 to 35 GHz) Group Delay Variation[1] dB 225 46 mA GHz ±0.6 ±1 0.5 - 5.0 GHz ±14 ±20 ps 5 - 30 GHz ±10 ±11 ps 30 - 45 GHz ±22 ±25 ps For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com dB HMC-AUH232 v02.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz Electrical Specifi cations (Continued)* Min. Output Voltage Level Typ. Max. Units 6 - 12 ps 8 Vp-p [3] Additive jitter (RMS) 0.4 ps 1 dB Output Gain Compression Point at 20 GHz 16.5 dBm 20 GHz @ Pin= 15 dBm[4] 22 22 dBm 40 GHz @ Pin= 15 dBm[4] 17 19.5 dBm Output Power Power Dissipation 0.9 1.25 5 GHz 5.4 10 & 15 GHz 4.2 dB 20 GHz 4.6 dB 25 GHz 5.4 dB 30 GHz 8.3 dB 35 GHz 7.4 dB 40 GHz 9.1 dB Noise Figure [1] Measured with a 1 GHz aperture dB [4] Verified at RF on-wafer probe. Vgg1 is adjusted until the drain current is 200 mA and Vgg2= 1.5 V.The drain voltage is applied through the RF output port using a bias tee with 5 volts on the bias Tee. [2] Measurement limited by rise/fall time of input reference signal [3] With a 2.7 VP-P input signal *Unless otherwise indicated, all measurements are from probed die Recommended Operating Conditions Parameter Symbol Positive Supply Voltage VD Positive Supply Current ID Min. 150 RF Input Power Reliability Characteristics Typ. Max. Units 5 6 V 180 225 mA 12 16 dBm Bias Current Adjust Vgg1 -1.5 -0.2 Output Voltage Adjust Vgg2 0 1.5 Operating Temperature TOP 0 Power Dissipation PD Parameter Activation Energy Median time to Failure (MTF) @125 °C Channel Temperature Symbol Typ. Units EA 1.7 eV MTF 6 x 109 Hours V 2 V 25 85 °C 0.9 1.25 W Thermal Characteristics PDISS TBASE TCH R MTF (W) (°C) (°C) (°C/W) (Hrs) Thermal Resistance to back side of chip 1.25 85 145 48 5.8 x 108 Thermal resistance to backside of carrier using 25.4 um of 84-1LMIT epoxy 1.25 85 155 56 1.8 x 108 Thermal Resistance to back side of chip 1.25 110 170 48 3.9 x 107 Thermal resistance to backside of carrier using 25.4 um of 84-1LMIT epoxy 1.25 110 180 56 1.4 x 107 Parameter 4 W For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP Parameter 10% to 90% Rise / Fall Time[2] 4-3 HMC-AUH232 v02.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz Input Return Loss vs. Frequency Gain vs. Frequency 0 17 INPUT RETURN LOSS (dB) 16 4 GAIN (dB) 15 14 13 12 11 -5 -10 -15 -20 4-4 9 -25 0 5 10 15 20 25 30 35 40 0 45 5 10 FREQUENCY (GHz) 20 25 30 35 40 45 Output Return Loss vs. Frequency 10 0 9 -5 OUTPUT RETURN LOSS (dB) NOISE FIGURE (dB) 15 FREQUENCY (GHz) Noise Figure vs. Frequency 8 7 6 5 4 -10 -15 -20 -25 -30 -35 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz) 0 5 10 15 20 25 30 35 40 45 FREQUENCY (GHz) Output Voltage Delta vs. Control Voltage 0 OUPUT VOLTAGE DELTA(Vpp) MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP 10 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 0.6 0.7 0.8 0.9 1 1.1 1.2 Vgg2 PIN VOLTAGE 1.3 1.4 1.5 Note: Measured Performance Characteristics (Typical Performance at 25°C) Vgg2 = 1.5V, Vdd= 5V, Idd = 200 mA (Measured data obtained from die in a test fixture unless otherwise stated) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH232 v02.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz Absolute Maximum Ratings +6 Vdc Gain Bias Voltage (Vgg1) -1.5 to 0 Vdc Output Voltage Adjust (Vgg2) 0 to +2 Vdc RF Input Power +18.5 dBm 40 Gb/s Input Voltage Pk-Pk (Vpp) 3V Thermal Resistance (channel to die bottom) 48 °C/W Channel Temperature 180 °C Storage Temperature -65 to +150 °C Operating Temperature -55 to +110 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Input Reference Signal PRBS=231-1, 2.1V Input, Data rate of 40 Gb/s Output Reference Signal PRBS=231-1, 7.3V Input, Data rate of 40 Gb/s 4 MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP Drain Bias Voltage (Vdd) Note: Measured Performance Characteristics (Typical Performance at 25°C) (Measured data obtained from die in a test fixture unless otherwise stated) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4-5 HMC-AUH232 v02.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz Outline Drawing MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP 4 4-6 Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH232 v02.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz Pad Descriptions Function Description 1 RES1 DC coupled 35Ω termination. 2 Vgg1 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 5 Vgg2 Gate Control for amplifier. Limited gain control adjust. See Assembly Diagram for external components. 6 Vdd & RFOUT RF output and DC Bias (vdd) for the output stage. 3 RFIN DC coupled. Blocking Cap is needed. 4 RES2 AC coupled 50Ω termination. Interface Schematic Application Circuit For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP Pad Number 4-7 HMC-AUH232 v02.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz Assembly Diagram MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP 4 4-8 Note 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH232 v02.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz Device Mounting • 1 mil diameter wire bonds are used on Vgg1 and Vgg2 connections to the capacitors and 27Ω resistors. • 0.5mil x 3mil ribbon bonds are used on RF connections • Capacitors and resistors on Vgg1 and Vgg2 are used to filter low frequency, <800MHz, RF pickup • 35Ω and 50Ω resistors are fabricated on a 5mil alumina substrate and should be suitable for use as a high frequency termination. • Silver-filled conductive epoxy is used for die attachment (Backside of the die should be grounded and the GND pads are connected to the backside metal through Vias) Device Operation These devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. The input to this device should be AC-coupled. To provide the typical 8Vpp output voltage swing, a 2.7Vpp AC-coupled input voltage swing is required. At this output level, the device will be in 1dB to 3dB of compression. Device Power Up Instructions 1. Ground the device 2. Bring Vgg1 to -0.5V (no drain current) 3. Bring Vgg2 to +1.5V (no drain current) 4. Bring Vdd to +5V (150mA to 225mA drain current) (Initially the drain current will rise sharply with a small drain voltage, but will will fl atten out as Vdd approaches 5V) • Vgg1 may be varied between -1V and 0V to provide the desired eye crossing point percentage (i.e. 50% crosspoint) and a limited cross point control capability. • Vdd may be increased to +5.5V if required to achieve greater output voltage swing. • Vgg2 may be adjusted between +1.5V and +0.3V to vary the output voltage swing. Device Power Down Instructions 1. Reverse the sequence identified above in steps 1 through 4. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP • For best gain flatness and group delay variation, eccosorb can be epoxied on the transmission line covering the center 3/4 of the transmission line length. Eccosorb may also be placed partially across the Vg1 pad and 35Ω resistor for improved gain flatness and group delay variation. (The insertion of the transmission line helps reduce low frequency, <10GHz, gain ripple) 4-9 HMC-AUH232 v02.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP 4 4 - 10 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010” Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH232 v02.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz Notes MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 11