HMC562


Design Assistance

Customised Pack Sizes / Qtys

Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing

Electrical test & trimming
o Waffle Pack
o Gel Pak
o Tape & Reel

Onsite storage, stockholding &
scheduling

100% Visual Inspection
o MIL-STD 883 Condition A
o MIL-STD 883 Condition A

On-site failure analysis

Bespoke 24 Hour monitored
storage systems for secure long
term product support

On-site failure analysis
Contact
[email protected]
For price, delivery and to place orders
HMC562
www.analog.com
www.micross.com
Analog Devices Welcomes
Hittite Microwave Corporation
NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
www.analog.com
www.hittite.com
THIS PAGE INTENTIONALLY LEFT BLANK
HMC562
v04.1108
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Typical Applications
Features
The HMC562 wideband driver is ideal for:
P1dB Output Power: +18 dBm
• Military & Space
Gain: 12.5 dB
• Test Instrumentation
Output IP3: +27 dBm
• Fiber Optics
Supply Voltage: +8V @ 80 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.42 x 0.1 mm
Functional Diagram
General Description
The HMC562 is a GaAs MMIC PHEMT Distributed
Driver Amplifier die which operates between 2 and
35 GHz. The amplifier provides 12.5 dB of gain,
+19 dBm output IP3 and +12 dBm of output power
at 1 dB gain compression while requiring 80 mA
from a +8V supply. The HMC562 is ideal for EW,
ECM and radar driver amplifier applications. The
HMC562 amplifier I/O’s are DC blocked and internally
matched to 50 Ohms facilitating integration into MultiChip-Modules (MCMs). All data is taken with the chip
connected via two 0.075mm (3 mil) ribbon bonds of
minimal length 0.31mm (12 mils).
Electrical Specifi cations, TA = +25° C, Vdd= +8V, Idd= 80 mA*
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
2.0 - 15.0
9.5
±0.4
Gain Variation Over Temperature
0.01
Max.
Min.
15.0 - 27.0
12.5
Gain Flatness
Typ.
8.5
0.01
Max.
27.0 - 35.0
12
7
±0.35
0.02
Typ.
0.02
GHz
10
dB
±1.3
dB
0.02
0.03
dB/ °C
Input Return Loss
14
13
10
Output Return Loss
16
15
12
dB
14
dBm
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
15
18
14
17
10
dB
21.5
20
16
dBm
Output Third Order Intercept (IP3)
27
24
22
dBm
Noise Figure
3
3.5
5
dB
Supply Current
(Idd) (Vdd= 8V, Vgg = -0.8V Typ.)
80
100
80
100
80
100
* Adjust Vgg between -2 to 0V to achieve Idd= 80 mA typical.
2 - 34
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Gain & Return Loss
Gain vs. Temperature
15
14
10
12
S21
S11
S22
10
-5
-10
8
+25C
+85C
-55C
6
-15
4
-20
2
0
-25
0
5
10
15
20
25
30
35
0
40
5
10
Input Return Loss vs. Temperature
25
30
35
0
+25C
+85C
-55C
+25C
+85C
-55C
-5
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
20
Output Return Loss vs. Temperature
0
-10
-15
-20
-10
-15
-20
-25
-25
0
5
10
15
20
25
30
35
0
5
10
FREQUENCY (GHz)
15
20
25
30
35
30
35
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
7
6
-10
+25C
+85C
-55C
-20
NOISE FIGURE (dB)
ISOLATION (dB)
15
FREQUENCY (GHz)
FREQUENCY (GHz)
-30
-40
-50
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
0
GAIN (dB)
RESPONSE (dB)
5
2
+25C
+85C
-55C
5
4
3
2
1
-60
0
0
4
8
12
FREQUENCY (GHz)
16
20
0
5
10
15
20
25
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 35
HMC562
v04.1108
Psat vs. Temperature
24
24
22
22
20
20
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature
18
16
14
16
+25C
+85C
-55C
12
10
10
0
5
10
15
20
25
30
35
0
5
10
FREQUENCY (GHz)
30
25
+25C
+85C
-55C
15
5
10
15
20
25
30
35
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
IP3 (dBm)
35
0
20
25
30
35
Gain, Power & Output IP3 vs.
Supply Voltage @ 10 GHz, Fixed Vgg
40
20
15
FREQUENCY (GHz)
Output IP3 vs. Temperature
30
Gain
P1dB
25
Psat
IP3
20
15
10
7.5
8
8.5
Vdd Supply Voltage (V)
FREQUENCY (GHz)
Power Compression @ 10 GHz
Power Compression @ 30 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
20
Pout
Gain
PAE
20
16
12
8
4
0
-10 -8
-6
-4
-2
0
2
4
6
8
INPUT POWER (dBm)
2 - 36
18
14
+25C
+85C
-55C
12
Pout (dBm), GAIN (dB), PAE (%)
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
10 12 14
16
Pout
Gain
PAE
16
12
8
4
0
-10
-8
-6
-4
-2
0
2
4
6
8
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10
12
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Drain Bias Voltage (Vdd)
+10 Vdc
Gate Bias Voltage (Vgg)
-2.0 to 0 Vdc
RF Input Power (RFIN)(Vdd = +10 Vdc)
+23 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 26 mW/°C above 85 °C)
2.3 W
Thermal Resistance
(channel to die bottom)
39 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+7.5
79
+8
80
+8.5
81
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
Absolute Maximum Ratings
2 - 37
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Outline Drawing
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2
2 - 38
Die Packaging Information [1]
Standard
Alternate
GP-2
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE IS ±.002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Pad Descriptions
Function
Description
1
IN
This pad is AC coupled
and matched to 50 Ohms
2
Vdd
Power supply voltage for amplifier.
External bypass capacitors are required.
3
OUT
This pad is AC coupled
and matched to 50 Ohms
4
Vgg
Gate control for amplifier. External
bypass capacitors are required.
Please follow “MMIC Amplifier Biasing Procedure”
application note.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
Pad Number
2 - 39
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Assembly Diagram
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2
2 - 40
Application Circuit
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC562
v04.1108
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
2
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010” Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a
tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290
deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than
3 seconds of scrubbing should be required for attachment.
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 41