HMC524


Design Assistance

Customised Pack Sizes / Qtys

Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing

Electrical test & trimming
o Waffle Pack
o Gel Pak
o Tape & Reel

Onsite storage, stockholding &
scheduling

100% Visual Inspection
o MIL-STD 883 Condition A
o MIL-STD 883 Condition A

On-site failure analysis

Bespoke 24 Hour monitored
storage systems for secure long
term product support

On-site failure analysis
Contact
[email protected]
For price, delivery and to place orders
HMC524
www.analog.com
www.micross.com
Analog Devices Welcomes
Hittite Microwave Corporation
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HMC524
v03.1114
MIXERS - I/Q MIXERS / IRM - CHIP
Gaas MMIC I/Q MIXER
22 - 32 GHz
Typical Applications
Features
The HMC524 is ideal for:
Wide IF Bandwidth: DC - 3.5 GHz
• Point-to-Point and Point-to-Multi-Point Radio
Image Rejection: 23 dB
LO to RF Isolation: 50 dB
High Input IP3: +20 dBm
Die Size: 1.49 x 1.14 x 0.1 mm
General Description
Functional Diagram
The HMC524 is a compact I/Q MMIC mixer which can
be used as either an Image Reject Mixer or a Single
Sideband Upconverter. The chip utilizes two standard
Hittite double balanced mixer cells and a 90 degree
hybrid fabricated in a GaAs MESFET process. All
data shown below is taken with the chip mounted
in a 50 Ohm test fixture and includes the effects of
mil diameter x 20 mil length bond wires on each
port. A low frequency quadrature hybrid was used to
produce a 100 MHz USB IF output. This product is a
much smaller alternative to hybrid style Image Reject
Mixers and Single Sideband Upconverter assemblies.
Electrical Specifications, TA = +25° C, IF= 100 MHz, LO = +17 dBm*
Parameter
Min.
Frequency Range, RF/LO
Frequency Range, IF
Max.
Min.
11
20
1 dB Compression (Input)
23
Typ.
Max.
24 - 29.5
DC - 3.5
Conversion Loss (As IRM)
Image Rejection
Typ.
22 - 32
GHz
DC - 3.5
14
10
20
+16
Units
GHz
13
dB
23
dB
+16
dBm
LO to RF Isolation
30
40
30
40
dB
LO to IF Isolation
12
18
12
18
dB
dBm
IP3 (Input)
+20
+20
Amplitude Balance
0.2
0.4
dB
5
5
Deg
Phase Balance
* Unless otherwise noted, all measurements performed as downconverter.
1
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC524
v03.1114
GaAs MMIC I/Q MIXER
22 - 32 GHz
Data taken as IRM with External IF 90° Hybrid
Image Rejection vs. Temperature
Conversion Gain vs. Temperature
IMAGE REJECTION (dB)
CONVERSION GAIN (dB)
35
-5
-10
-15
30
25
20
15
10
5
0
-20
21
23
25
27
29
31
21
33
23
25
RF FREQUENCY (GHz)
+25C
+85C
+25C
-55C
Conversion Gain vs. LO Drive
31
33
+85C
-55C
0
-5
RETURN LOSS (dB)
CONVERSION GAIN (dB)
29
Return Loss
0
-10
-15
-5
-10
-15
-20
21
23
25
27
29
31
33
21
23
25
27
29
31
33
FREQUENCY (GHz)
RF FREQUENCY (GHz)
+13dBm
+15dBm
RF
+17dBm
+19dBm
Input P1dB vs. Temperature
LO
Input IP3 vs. LO Drive
24
30
22
25
20
20
IP3 (dBm)
P1dB (dBm)
27
RF FREQUENCY (GHz)
MIXERS - I/Q MIXERS / IRM - CHIP
40
0
18
16
15
10
14
5
12
10
0
21
23
25
27
29
31
33
RF FREQUENCY (GHz)
+25C
+85C
21
23
25
27
29
31
33
RF FREQUENCY (GHz)
-55C
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2
HMC524
v03.1114
GaAs MMIC I/Q MIXER
22 - 32 GHz
Quadrature Channel Data Taken Without IF 90° Hybrid
0
-20
-5
RESPONSE (dB)
ISOLATION (dB)
IF Bandwidth*
-10
-30
-40
-50
-10
-15
-20
-60
21
23
25
27
29
31
-25
0.5
33
1
RF FREQUENCY (GHz)
LO/RF
LO/IF1
RF/IF1
RF/IF2
1.5
2
2.5
3
3.5
IF FREQUENCY (GHz)
RETURN LOSS
LO/IF2
Amplitude Balance vs. LO Drive
CONVERSION GAIN
Phase Balance vs. LO Drive
3
10
2.5
2
PHASE BALANCE (degrees)
AMPLITUDE BALANCE (dB)
MIXERS - I/Q MIXERS / IRM - CHIP
Isolations
1.5
1
0.5
0
-0.5
-1
-1.5
-2
5
0
-5
-2.5
-3
-10
21
23
25
27
29
31
33
21
23
RF FREQUENCY (GHz)
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
27
29
LO = +13 dBm
LO = +15 dBm
Upconverter Performance Conversion
Gain vs. LO Drive
31
33
LO = +17 dBm
LO = +19 dBm
Upconverter Performance Sideband
Rejection vs. LO Drive
0
0
SIDEBAND REJECTION (dBc)
CONVERSION GAIN (dB)
25
RF FREQUENCY (GHz)
-5
-10
-15
-10
-20
-30
-40
-50
-20
21
23
25
27
29
31
33
RF FREQUENCY (GHz)
LO = +13dBm
LO = +15dBm
21
23
25
27
29
31
33
RF FREQUENCY (GHz)
LO = +17dBm
LO = +19dBm
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
* Conversion gain data taken with external IF 90° hybrid
3
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC524
v03.1114
GaAs MMIC I/Q MIXER
22 - 32 GHz
Absolute Maximum Ratings
+13 dBm
LO Drive
+27 dBm
Channel Temperature
150°C
nLO
mRF
Continuous Pdiss (T=85°C)
(derate 9.8 mW/°C above 85°C)
641 mW
Thermal Resistance (RTH)
(junction to die bottom)
102 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 deg °C
ESD Sensitivity (HBM)
Class 1A
0
1
2
3
4
xx
0
xx
-13
27
xx
1
18
0
35
52
xx
2
76
74
87
74
82
3
xx
83
87
77
87
4
xx
xx
82
87
87
RF = 24.5 GHz @ -10 dBm
LO = 24.4 GHz @ 17 dBm
Data taken without IF hybrid
All values in dBc below IF power level
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
MIXERS - I/Q MIXERS / IRM - CHIP
RF / IF Input
MxN Spurious Outputs
NOTES:
1.. ALL DIMENSIONS ARE IN INCHES [MM]
2.. DIE THICKNESS IS .004”
3.. TYPICAL BOND PAD IS .004”
4.. BACKSIDE METALIZATION: GOLD
5.. BOND PAD METALIZATION: GOLD
6.. BACKSIDE METAL IS GROUND
7.. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8.. OVERALL DIE SIZE ±.002”
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4
HMC524
v03.1114
GaAs MMIC I/Q MIXER
22 - 32 GHz
Pad Descriptions
MIXERS - I/Q MIXERS / IRM - CHIP
Pad Descriptions
5
Pad Number
Function
Description
3
RF
This pad is AC coupled and matched to
50 Ohms.
6
LO
This pad is DC coupled and matched to
50 Ohms.
1, 4
IF2
2, 5
IF1
GND
Pin Schematic
This pad is DC coupled. For applications not requiring operation to DC, this port should be DC blocked
externally using a series capacitor whose value has
been chosen to pass the necessary IF frequency range.
For operation to DC, this pad must not source/sink more
than 3mA of current or die non-function and possible die
failure will result. Pads 4 and 5 are alternate IF ports.
The backside of the die must be connected
to RF/DC ground.
Assembly Diagrams
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC524
v03.1114
GaAs MMIC I/Q MIXER
22 - 32 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be
raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be brought as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Handling Precautions
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metalized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and flat.
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
MIXERS - I/Q MIXERS / IRM - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Figure 2.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface
temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/
hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for
more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
6