HMC1015


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
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
Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing
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o Waffle Pack
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Onsite storage, stockholding &
scheduling
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o MIL-STD 883 Condition A
o MIL-STD 883 Condition A
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storage systems for secure long
term product support
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On-site failure analysis
Contact
[email protected]
For price, delivery and to place orders
HMC1015
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Hittite Microwave Corporation
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HMC1015
v01.0814
MIXERS - TRIPLE-BALANCED - CHIP
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Typical Applications
Features
The HMC1015 is ideal for:
Passive: No DC Bias Required
• Point-to-Point Radios
High Input IP3: 20 dBm
• Point-to-Multi-Point Radios & VSAT
High LO/RF Isolation: 45 dB
• Test Equipment & Sensors
High 2LO/IF Isolation: 50 dB
• Military End-Use
Wide IF Bandwidth: 16 - 22 GHz
Upconversion & Downconversion Applications
Die Size: 1.14 x 1.1 x 0.1 mm
Functional Diagram
General Description
The HMC1015 is a general purpose triple-balanced
mixer chip that can be used as a frequency converter
with 16 to 22 GHz at the IF port and 26 to 32 GHz at
the RF port. This mixer requires no external components
or matching circuitry. The HMC1015 provides excellent
LO/RF, LO/IF and 2LO/IF isolation due to optimized
balun structures. The mixer operates with LO drive
levels from +9 dBm to +15 dBm. The HMC1015
wideband mixer exhibits consistent conversion gain
and compression across its bandwidth.
Electrical Specifications, TA = +25° C, LO = 9 GHz, LO = +13 dBm [2]
Parameter
Min.
Typ.
Max.
Units
RF Frequency Range
26 - 32
GHz
IF Frequency Range
16- 22
GHz
LO Frequency Range
7 - 11
Conversion Loss
10
LO to RF Isolation
LO to IF Isolation
[1]
[1]
2LO to IF Isolation
[1]
GHz
13
dB
45
dB
31
dB
50
dB
RF to IF Isolation
35
dB
IP3 (Input)
22
dBm
1 dB Gain Compression (Input)
10
dBm
[1] Fixed IF = 17 GHz.
[2] Unless otherwise noted , all measurements performed as an upconverter with LO = 9 GHz.
1
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1015
v01.0814
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Conversion Gain vs. Temperature
Upconverter, LO= 7 GHz
Conversion Gain vs. Temperature
Upconverter, LO= 9 GHz
-5
-10
-15
-20
-25
-5
-10
-15
-20
-25
24
25
26
27
28
29
30
31
32
33
34
24
25
26
27
RF FREQUENCY (GHz)
+25 C
+85 C
-55 C
30
31
32
33
34
+85 C
-55 C
Conversion Gain vs. LO Power
Upconverter, LO= 7 GHz
0
CONVERSION GAIN (dB)
0
CONVERSION GAIN (dB)
29
+25 C
Conversion Gain vs. Temperature
Upconverter, LO= 11 GHz
-5
-10
-15
-20
-25
-5
-10
-15
-20
-25
24
25
26
27
28
29
30
31
32
33
34
24
25
26
27
RF FREQUENCY (GHz)
+25 C
28
29
30
31
32
33
34
RF FREQUENCY (GHz)
+85 C
-55 C
+9 dBm
+11 dBm
Conversion Gain vs. LO Power
Upconverter, LO= 9 GHz
+13 dBm
+15 dBm
Conversion Gain vs. LO Power
Upconverter, LO= 11 GHz
0
CONVERSION GAIN (dB)
0
CONVERSION GAIN (dB)
28
RF FREQUENCY (GHz)
MIXERS - TRIPLE-BALANCED - CHIP
0
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
0
-5
-10
-15
-20
-25
-5
-10
-15
-20
-25
24
25
26
27
28
29
30
31
32
33
RF FREQUENCY (GHz)
+9 dBm
+11 dBm
34
24
25
26
27
28
29
30
31
32
33
34
35
RF FREQUENCY (GHz)
+13 dBm
+15 dBm
+9 dBm
+11 dBm
+13 dBm
+15 dBm
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2
HMC1015
v01.0814
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Input IP3 vs. Temperature
Upconverter, LO= 7 GHz
Input IP3 vs. Temperature
Upconverter, LO= 9 GHz
30
25
IP3 (dBm)
IP3 (dBm)
25
20
15
10
15
5
24
25
26
27
28
29
30
31
32
33
34
24
25
26
RF FREQUENCY (GHz)
+25 C
-55 C
28
29
+25 C
Input IP3 vs. Temperature
Upconverter, LO= 11 GHz
30
31
32
33
34
+85 C
-55 C
Input IP3 vs. LO Power
Upconverter, LO= 7 GHz
30
25
25
IP3(dBm)
30
20
15
10
20
15
10
5
5
24
25
26
27
28
29
30
31
32
33
34
24
25
26
RF FREQUENCY (GHz)
27
28
29
30
31
32
33
34
RF FREQUENCY (GHz)
+85 C
-55 C
+9 dBm
+11 dBm
Input IP3 vs. LO Power
Upconverter, LO= 9 GHz
+13 dBm
+15 dBm
Input IP3 vs. LO Power
Upconverter, LO= 11 GHz
30
30
25
25
IP3(dBm)
IP3(dBm)
27
RF FREQUENCY (GHz)
+85 C
+25 C
20
15
10
20
15
10
5
5
24
25
26
27
28
29
30
31
32
33
34
RF FREQUENCY (GHz)
+9 dBm
+11 dBm
3
20
10
5
IP3 (dBm)
MIXERS - TRIPLE-BALANCED - CHIP
30
24
25
26
27
28
29
30
31
32
33
34
RF FREQUENCY (GHz)
+13 dBm
+15 dBm
+9 dBm
+11 dBm
+13 dBm
+15 dBm
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1015
v01.0814
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
RF and IF Return Loss
LO Return Loss
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
-10
-15
-20
-20
-30
-40
-25
-30
-50
15
19
23
27
31
35
6
8
10
FREQUENCY (GHz)
12
14
FREQUENCY (GHz)
RF
IF
+9 dBm
+11 dBm
Isolation LO/IF, LO/RF, 2LO/IF
+13 dBm
+15 dBm
Isolation RF/IF
-10
-10
-20
-20
ISOLATION (dB)
ISOLATION (dB)
-30
-40
-50
-60
-70
-30
-40
-50
-80
-60
-90
6
7
8
9
10
11
24
12
25
26
2LO/IF
29
LO/RF
30
31
32
33
34
RF/IF
Input P1dB vs. Temperature @ LO= 9 GHz
Input P1dB vs. LO Power @ LO= 9 GHz
14
14
12
12
10
10
P1dB (dBm)
P1dB (dBm)
28
RF FREQUENCY (GHz)
LO FREQUENCY (GHz)
LO/IF
27
MIXERS - TRIPLE-BALANCED - CHIP
0
0
8
6
4
8
6
4
2
2
24
25
26
27
28
29
30
31
32
33
34
RF FREQUENCY (GHz)
+25C
+85C
24
25
26
27
28
29
30
31
32
33
34
RF FREQUENCY (GHz)
-40C
+9 dBm
+11 dBm
+13 dBm
+15 dBm
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4
HMC1015
v01.0814
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
MIXERS - TRIPLE-BALANCED - CHIP
Table 1. Absolute Maximum Ratings
RF / IF Input (LO = +18 dBm)
15.5 dBm
LO Drive
20 dBm
Maximum Junction Temperature
150 °C
Continuous Pdiss (Ta = 85 °C)
(derate 2.5 mW/°C above 85 °C)
79 mW
Thermal Resistance (RTH)
(junction to die bottom)
392 °C/W
Operating Temperature
-55°C to +85°C
Storage Temperature
-65°C to 150°C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Table 2. Die Packaging Information
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS 0.004”
3. BOND PADS 1, 2 & 3 are 0.0059” [0.150] X 0.0039” [0.099].
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± 0.002
[1] For more information refer to the “Packaging
information” Document in the Product Support Section of
our website.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
5
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1015
v01.0814
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Table 3. Pad Descriptions
Function
Description
1
RF
This pad is AC coupled
and matched to 50 Ohms.
2
IF
This pad is AC coupled
and matched to 50 Ohms.
3
LO
This pad is AC coupled
and Matched to 50 Ohms.
Die Bottom
GND
Die bottom must be connected to RF/DC ground
Pad Schematic
Assembly Diagram
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
MIXERS - TRIPLE-BALANCED - CHIP
Pad Number
6
HMC1015
v01.0814
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
MIXERS - TRIPLE-BALANCED - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched
with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
7
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1015
v01.0814
GaAs MMIC FUNDAMENTAL
MIXER, 26 - 32 GHz
MIXERS - TRIPLE-BALANCED - CHIP
Notes:
For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8