HMC970 v00.0111 2 WATT PIN MMIC HIGH ISOLATION SPDT SWITCH, 8 - 21 GHz Typical Applications Features The HMC970 is ideal for: High Isolation: 40 dB • Telecom Infrastructure Low Insertion Loss: 1.2 dB • Microwave Radio & VSAT All-Shunt Reflective Topology • Military Radios, Radar & ECM High Linearity: +50 dBm Input IP3 • Space Systems Compact Die Size: 2.21 x 1.45 x 0.1 mm • Test Instrumentation Functional Diagram General Description The HMC970 is a broadband high isolation all-shunt high IP3 design, reflective PIN SPDT MMIC chip. Covering 8 to 21 GHz, the switch features 40 dB isolation and low 1.2 dB isolation loss. The HMC970 is capable of switching 2W of power from 8 to 21 GHz. The HMC970 operates from a positive (30mA) supply current and a negative (-10V) supply voltage and includes on chip bias network, thus requiring no RF chokes to apply DC bias. Bias control signals for the switch consists of a reverse bias voltage of -10V typical for ON state and a forward bias current of 30 mA for the OFF state. Switches - Chip 7 Electrical Specifications, TA = +25° C, With 30mA / -10V Control, 50 Ohm System Parameter Frequency Insertion Loss RFC to RF1 Insertion Loss RFC to RF2 Isolation Typ. Max. Units 8 - 12 GHz 12 - 21 GHz 1.1 1.3 1.4 1.7 dB dB 8 - 14 GHz 14 - 18 GHz 18 - 21 GHz 0.9 1.2 1.4 1.2 1.6 1.7 dB dB dB 40 dB 10 dB dB Input Power for 1 dB Compression 34 dBm Input Third Order Intercept (Two-Tone Input Power= +16 dBm Each Tone, 1 MHz Tone Separation) 50 dBm Return Loss 7-1 Min. 35 “On State” For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC970 v00.0111 2 WATT PIN MMIC HIGH ISOLATION SPDT SWITCH, 8 - 21 GHz Isolation Loss, RFC to RF2 0 0 -0.2 -0.2 -0.4 +25C +85C -55C -0.6 INSERTION LOSS (dB) -0.8 -1 -1.2 -1.4 -0.4 -0.8 -1 -1.2 -1.4 -1.6 -1.6 -1.8 -1.8 -2 -2 6 8 10 12 14 16 18 20 22 +25C +85C -55C -0.6 24 6 8 10 Isolation 16 18 20 22 24 7 0 -5 -10 RFC/RF1 (RF2 ON) RFC/RF2 (RF1 ON) RF1/RF2 (RF1 ON) RF1/RF2 (RF2 ON) -20 RETURN LOSS (dB) ISOLATION (dB) 14 Return Loss 0 -30 -40 -50 -10 -15 -20 -25 RFC RF1 RF2 -30 -35 -40 -60 6 8 10 12 14 16 18 20 22 24 6 8 10 Insertion Loss vs. Pin, RFC to RF1 14 16 18 20 22 24 Insertion Loss vs. Pin, RFC to RF2 0 -0.5 -0.5 INSERTION LOSS (dB) 0 -1 -1.5 12GHz 14GHz 16GHz -2 12 FREQUENCY (GHz) FREQUENCY (GHz) INSERTION LOSS (dB) 12 FREQUENCY (GHz) FREQUENCY (GHz) Switches - Chip INSERTION LOSS (dB) Insertion Loss, RFC to RF1 -2.5 12GHz 14GHz 16GHz -1 -1.5 -2 -2.5 -3 -3 20 22 24 26 28 30 INPUT POWER (dBm) 32 34 36 20 22 24 26 28 30 32 34 36 INPUT POWER (dBm) *Isolation data taken with probe on the die For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC970 v00.0111 2 WATT PIN MMIC HIGH ISOLATION SPDT SWITCH, 8 - 21 GHz Absolute Maximum Ratings IP3 RFC to RF1 and RFC to RF2 70 RFC/RF1 RFC/RF2 IP3 (dBm) 60 50 RF Input Power +34 dBm Negative Control Voltage -14V Forward Bias Current 100 mA Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 40 30 8 10 12 14 16 18 20 FREQUENCY (GHz) Switches - Chip 7 7-3 Control Voltages State RFC - RF1 RFC - RF2 CNTL1 CNTL2 1 IL Isol -10V +30mA / 1.29V 2 Isol IL +30mA / 1.29V -10V Equivalent Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC970 v00.0111 2 WATT PIN MMIC HIGH ISOLATION SPDT SWITCH, 8 - 21 GHz Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. BACKSIDE METALIZATION: GOLD 4. BACKSIDE METAL IS GROUND 5. BOND PAD METALIZATION: GOLD 6. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Switches - Chip 7 7-4 HMC970 v00.0111 2 WATT PIN MMIC HIGH ISOLATION SPDT SWITCH, 8 - 21 GHz Pad Descriptions Switches - Chip 7 7-5 Pad Number Function Description 1 RFC RF common port. This port is DC shorted to ground through an on-chip inductor. 2 RF1 RF Output port (path1) contains DC control voltage and also may be connected to the external DC bias through an RF choke. 3 RF2 RF Output port (path2) contains DC control voltage and also may be connected to the external DC bias through an RF choke. 4 CNTL1 DC control input for port 1. 5 CTRL2 DC control input for port 2. Interface Schematic Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC970 v00.0111 2 WATT PIN MMIC HIGH ISOLATION SPDT SWITCH, 8 - 21 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. RF Ground Plane 0.150mm (0.005”) Thick Moly Tab Mounting 0.254mm (0.010”) Thick Alumina Thin Film Substrate The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Figure 2. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7 Switches - Chip Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. 7-6