RENESAS PF08134B

PF08134B
MOS FET Power Amplifier Module
for GSM850 and DCS1800/1900 Triple Band Handy Phone
REJ03G0075-0101Z
Rev.1.01
May 13, 2004
Application
• Triple band amplifier for
GSM850 (824 MHz to 849 MHz) and DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz).
• For 3.5 V & GPRS Class12 operation compatible
Features
•
•
•
•
•
•
All in one including output matching circuit
Simple external circuit
Simple power control
High gain 3stage amplifier : 0 dBm input Typ
Lead less thin & Small package : 8.0 × 10.0 × 1.5 mm Max
High efficiency
 47% Typ at 33.5 dBm for GSM850
 47% Typ at 32.5 dBm for DCS1800
 47% Typ at 32.0 dBm for DCS1900
Pin Arrangement
• RF-Q-8
5
G6
8 7
4
G3
2
1
Rev.1.01, May 13, 2004, page 1 of 13
1: Pin GSM
2: Vapc
3: Vdd1
4: Pout GSM
5: Pout DCS & Pout PCS
6: Vdd2
7: Vctl
8: Pin DCS & Pin PCS
G: GND
PF08134B
Absolute Maximum Ratings *1
(Tc = 25°C)
Item
Symbol
Vdd
Supply voltage
Rating
7.0
Unit
V
V
A
Supply current
Idd GSM
5.0
3.5
Vctl voltage
Idd DCS
Vctl
2
4
A
V
Vapc voltage
Input power
Vapc
Pin
4
10
V
dBm
−30 to +100
−40 to +100
°C
°C
5
3
W
W
2
Operating case temperature *
Storage temperature
Tc (op)
Tstg
Output power
Pout GSM
Pout DCS
Remark
at no-operation
at operation (50 Ω load)
Notes: 1. The maximum ratings shall be valid over both the GSM850-band (824 to 849 MHz),
and the DCS1800/1900-band (1710 to 1785 MHz, 1850 to 1910 MHz).
2. These are specified at pulsed operation with pulse width = 1154 µs and duty cycle of 2:8.
Electrical Characteristics for DC
(Tc = 25°C)
Min
Typ
Max
Unit
Test Condition
Drain cutoff current
Item
Ids
Symbol
—
—
20
µA
Vapc control current
Iapc
—
—
2.0
mA
Vdd = 4.7 V, Vapc = 0 V,
Vctl = 0.2 V
Vapc = 2.2 V
Vctl control current
Ictl
—
—
2
µA
Vctl = 3 V
Rev.1.01, May 13, 2004, page 2 of 13
PF08134B
Electrical Characteristics for GSM850 band
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 824 to 849 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50 Ω, Tc = 25°C,
Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used.
Min
Typ
Max
Unit
Frequency range
Item
f
Symbol
824
—
849
MHz
Test Condition
Band select (GSM active)
Vctl
2.0
—
2.8
V
Input power
Pin
–2
—
2
dBm
Control voltage range
Vapc
0.2
—
2.2
V
Supply voltage
Vdd
3.1
3.5
4.5
V
Total efficiency
ηT
40
47
—
%
2nd harmonic distortion
2nd H.D.
—
–10.5
–2.5
dBm
3rd harmonic distortion
3rd H.D.
—
–16.5
–2.5
dBm
4th~8th harmonic distortion
4th~8th H.D.
—
—
–2.5
dBm
Input VSWR
VSWR (in)
—
1.5
3
—
Output power (1)
Pout (1)
33.5
34.0
—
dBm
Vapc = 2.2 V
Output power (2)
Pout (2)
32.0
32.5
—
dBm
Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C
Pout GSM = 33.5 dBm,
Vapc controlled
Idd at Low power
—
—
—
300
mA
Pout GSM = 7 dBm
Isolation
—
—
–48
–37
dBm
Vapc = 0.2 V
Isolation at
DCS RF-output
when GSM is active
—
—
–25
–18
dBm
Pout GSM = 33.5 dBm,
Measured at f = 1648 to 1698 MHz
—
1
2
Switching time
tr, tf
µs
Pout GSM = 5 to 33.5 dBm
Stability
—
No parasitic oscillation
< –36 dBm
—
Vdd = 3.1 to 4.5 V, Pout GSM ≤ 33.5 dBm,
Vapc GSM ≤ 2.2 V, Rg = 50 Ω,
Output VSWR = 6 : 1 All phase angles
Load VSWR tolerance
—
No degradation
or
Permanent degradation
—
Vdd = 3.1 to 4.5 V, Pout GSM ≤ 33.5 dBm,
Vapc GSM ≤ 2.2 V, Rg = 50 Ω, t = 20 sec.,
Output VSWR = 10 : 1 All phase angles
Load VSWR tolerance
at GPRS CLASS 12
operation
—
No degradation
or
Permanent degradation
—
Vdd = 3.1 to 4.2 V, Pout GSM ≤ 33.5 dBm,
Vapc GSM ≤ 2.2 V, Rg = 50 Ω, t = 20 sec.,
Tc ≤ 90°C,
Output VSWR = 10 : 1 All phase angles
Slope Pout/Vapc
—
—
160
200
dB/V
AM output
—
—
15
20
%
Rev.1.01, May 13, 2004, page 3 of 13
Pout GSM = 5 to 33.5 dBm
Pout GSM = 5 to 33.5 dBm,
4% AM modulation at input
50 kHz modulation frequency
PF08134B
Electrical Characteristics for DCS1800 band
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 1710 to 1785 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50 Ω, Tc = 25°C,
Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used.
Item
Symbol
Min
Typ
Max
Unit
1710
—
1785
MHz
0
—
0.1
V
Pin
–2
—
2
dBm
Vapc
0.2
—
2.2
V
Supply voltage
Vdd
3.1
3.5
4.5
V
Total efficiency
ηT
40
47
—
%
2nd harmonic distortion
2nd H.D.
—
–14.5
–2.5
dBm
3rd harmonic distortion
3rd H.D.
—
–7.5
–2.5
dBm
4th~8th harmonic distortion
4th~8th H.D.
—
—
–2.5
dBm
Input VSWR
VSWR (in)
—
1.5
3
—
Output power (1)
Pout (1)
32.5
33.5
—
dBm
Vapc = 2.2 V
Output power (2)
Pout (2)
31.0
32.0
—
dBm
Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C
Frequency range
f
Band select (DCS active)
Vctl
Input power
Control voltage range
Test Condition
Pout DCS = 32.5 dBm,
Vapc controlled
Idd at Low power
—
—
—
150
mA
Pout DCS = 5 dBm
Isolation
—
—
–42
–37
dBm
Vapc = 0.2 V
Switching time
tr, tf
—
1
2
µs
Pout DCS = 0 to 32.5 dBm
Stability
—
No parasitic oscillation
< –36 dBm
—
Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.5 dBm,
Vapc DCS ≤ 2.2 V, Rg = 50 Ω,
Output VSWR = 6 : 1 All phase angles
Load VSWR tolerance
—
No degradation
or
Permanent degradation
—
Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.5 dBm,
Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec.,
Output VSWR = 10 : 1 All phase angles
Load VSWR tolerance
at GPRS CLASS 12
operation
—
No degradation
or
Permanent degradation
—
Vdd = 3.1 to 4.2 V, Pout DCS ≤ 32.5 dBm,
Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec.,
Tc ≤ 90°C,
Output VSWR = 10 : 1 All phase angles
Slope Pout/Vapc
—
—
160
200
dB/V
AM output
—
—
15
20
%
Rev.1.01, May 13, 2004, page 4 of 13
Pout DCS = 0 to 32.5 dBm
Pout DCS = 0 to 32.5 dBm,
4% AM modulation at input
50 kHz modulation frequency
PF08134B
Electrical Characteristics for DCS1900 band
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 1850 to 1910 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50 Ω, Tc = 25°C,
Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used.
Item
Symbol
Min
Typ
Max
Unit
1850
—
1910
MHz
0
—
0.1
V
Pin
–2
—
2
dBm
Vapc
0.2
—
2.2
V
Supply voltage
Vdd
3.1
3.5
4.5
V
Total efficiency
ηT
40
47
—
%
2nd harmonic distortion
2nd H.D.
—
–15
–3
dBm
3rd harmonic distortion
3rd H.D.
—
–8
–3
dBm
4th~8th harmonic distortion
4th~8th H.D.
—
—
–3
dBm
Input VSWR
VSWR (in)
—
1.5
3
—
Output power (1)
Pout (1)
32.0
33.0
—
dBm
Vapc = 2.2 V
Output power (2)
Pout (2)
30.5
31.5
—
dBm
Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C
Frequency range
f
Band select (DCS active)
Vctl
Input power
Control voltage range
Test Condition
Pout DCS = 32.0 dBm,
Vapc controlled
Idd at Low power
—
—
—
150
mA
Pout DCS = 5 dBm
Isolation
—
—
–42
–37
dBm
Vapc = 0.2 V
Switching time
tr, tf
—
1
2
µs
Pout DCS = 0 to 32.0 dBm
Stability
—
No parasitic oscillation
< –36 dBm
—
Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm,
Vapc DCS ≤ 2.2 V, Rg = 50 Ω,
Output VSWR = 6 : 1 All phase angles
Load VSWR tolerance
—
No degradation
or
Permanent degradation
—
Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm,
Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec.,
Output VSWR = 10 : 1 All phase angles
Load VSWR tolerance
at GPRS CLASS 12
operation
—
No degradation
or
Permanent degradation
—
Vdd = 3.1 to 4.2 V, Pout DCS ≤ 32.0 dBm,
Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec.,
Tc ≤ 90°C,
Output VSWR = 10 : 1 All phase angles
Slope Pout/Vapc
—
—
160
200
dB/V
AM output
—
—
15
20
%
Rev.1.01, May 13, 2004, page 5 of 13
Pout DCS = 0 to 32.0 dBm
Pout DCS = 0 to 32.0 dBm,
4% AM modulation at input
50 kHz modulation frequency
PF08134B
Circuit Diagram
PIN7
Vctl
PIN6
Vdd2
PIN8
Pin DCS
PIN5
Pout DCS
PIN1
Pin GSM
PIN4
Pout GSM
Bias circuit
PIN2
Vapc
Rev.1.01, May 13, 2004, page 6 of 13
PIN3
Vdd1
PF08134B
Characteristic Curves
GSM mode (824 MHz to 849 MHz)
GSM mode (849 MHz) Pout, Eff vs. Vapc
40
30
20
10
0
–10
–20
–30
–40
–50
–60
100
90
Pout
80
70
60
Eff
50
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Control voltage range Vapc (V)
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25°C
GSM mode (849 MHz) Eff vs. Pout
GSM mode (824 MHz) Eff vs. Pout
60
20
10
0
5
10 15 20 25 30 35
Output power Pout (dBm)
Input power Pin (dBm)
Rev.1.01, May 13, 2004, page 7 of 13
30
20
10
0
40
GSM mode (824 MHz) Pout, Eff vs. Pin
36.0
60
35.5 Vdd = 3.5 V
Tc = 25°C
Pout
55
35.0
34.5
50
34.0
Eff
33.5
45
33.0
32.5
32.0
40
Pout : Vapc = 2.2 V
31.5
Eff : Pout = 33.5 dBm
31.0
35
–10 –8 –6 –4 –2 0 2 4 6 8 10
Pin = 0 dBm
50 Vdd = 3.5 V
Vapc = control
40 Tc = 25°C
0
5
10 15 20 25 30 35
Output power Pout (dBm)
40
GSM mode (849 MHz) Pout, Eff vs. Pin
36.0
60
35.5 Vdd = 3.5 V
Tc = 25°C
55
35.0
34.5
Pout
50
34.0
33.5
Eff
33.0
45
32.5
32.0
40
Pout : Vapc = 2.2 V
31.5
Eff : Pout = 33.5 dBm
35
31.0
–10 –8 –6 –4 –2 0 2 4 6 8 10
Input power Pin (dBm)
Efficiency Eff (%)
30
Output power Pout (dBm)
Output power Pout (dBm)
Efficiency Eff (%)
Pin = 0 dBm
50 Vdd = 3.5 V
Vapc = control
40 Tc = 25°C
Efficiency Eff (%)
Efficiency Eff (%)
60
0
Efficiency Eff (%)
Output power Pout (dBm)
100
Pin = 0 dBm
90
Pout
Vdd = 3.5 V
80
Vapc = control
70
Tc = 25°C
60
Eff
50
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Control voltage range Vapc (V)
Efficiency Eff (%)
Output power Pout (dBm)
GSM mode (824 MHz) Pout, Eff vs. Vapc
40
30
20
10
0
–10
–20
–30
–40
–50
–60
PF08134B
GSM mode (824 MHz to 849 MHz) (cont.)
GSM mode (824 MHz) Idd vs. Pout
GSM mode (849 MHz) Idd vs. Pout
10
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
1 Tc = 25°C
Supply current Idd (A)
Supply current Idd (A)
10
0.1
0.01
–50 –40 –30 –20 –10 0 10 20 30
Output power Pout (dBm)
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
1 Tc = 25°C
0.1
0.01
–50 –40 –30 –20 –10 0 10 20 30
Output power Pout (dBm)
40
Eff
50
Pout
35
45
34
33
32
31
650
40
Pin = 0 dBm
Vdd = 3.5 V
Tc = 25°C
Pout : Vapc = 2.2 V
Eff : Pout = 33.5 dBm
700
750
800
850
900
Frequency f (MHz)
35
30
950
Output power Pout (dBm)
GSM mode (824 MHz) Pout vs. Pin (Temperature variation)
36
Vapc = 2.2 V
Vdd = 3.5 V, Tc = 25°C
35
Vdd = 3.5 V, Tc = 85°C
34
Vdd = 3.1 V, Tc = 85°C
33
32
31
–8
–6
–4 –2
0
2
4
Input power Pin (dBm)
Rev.1.01, May 13, 2004, page 8 of 13
6
8
38
37
824 MHz
36
849 MHz
35
Vdd = 3.5 V
Tc = 25°C
Pout : Vapc = 2.2 V
Eff : Pout = 33.5 dBm
34
33
3.1
3.3
3.5 3.7 3.9 4.1 4.3
Supply voltage Vdd (V)
4.5
GSM mode (849 MHz) Pout vs. Pin (Temperature variation)
36
Vapc = 2.2 V
Output power Pout (dBm)
36
55
Output power Pout (dBm)
GSM mode Pout vs. Vdd
37
Efficiency Eff (%)
Output power Pout (dBm)
GSM mode Pout, Eff vs. f
40
35
Vdd = 3.5 V, Tc = 25°C
34
Vdd = 3.5 V, Tc = 85°C
33
Vdd = 3.1 V, Tc = 85°C
32
31
–8
–6
–4 –2
0
2
4
Input power Pin (dBm)
6
8
PF08134B
DCS mode (1710 MHz to 1785 MHz)
DCS mode (1785 MHz) Pout, Eff vs. Vapc
40
30
20
10
0
–10
–20
–30
–40
–50
–60
100
90
Pout
80
70
60
Eff
50
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Control voltage range Vapc (V)
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25°C
DCS mode (1785 MHz) Eff vs. Pout
DCS mode (1710 MHz) Eff vs. Pout
60
Pin = 0 dBm
50 Vdd = 3.5 V
Vapc = control
40 Tc = 25°C
Efficiency Eff (%)
30
20
10
0
5
10
15
20
25
30
Output power Pout (dBm)
Pin = 0 dBm
50 Vdd = 3.5 V
Vapc = control
40 Tc = 25°C
30
20
10
0
35
55
33.5
50
Eff
33.0
32.5
45
40
Pout : Vapc = 2.2 V
Eff : Pout = 32.5 dBm
32.0
–10 –8 –6 –4 –2
0
2
4
Input power Pin (dBm)
Rev.1.01, May 13, 2004, page 9 of 13
6
8
35
10
Output power Pout (dBm)
34.0
Pout
Vdd = 3.5 V
Tc = 25°C
5
10
15
20
25
30
Output power Pout (dBm)
35
DCS mode (1785 MHz) Pout, Eff vs. Pin
60
Efficiency Eff (%)
Output power Pout (dBm)
DCS mode (1710 MHz) Pout, Eff vs. Pin
34.5
0
34.5
34.0
60
Vdd = 3.5 V
Tc = 25°C
55
Pout
33.5
50
Eff
33.0
32.5
45
40
Pout : Vapc = 2.2 V
Eff : Pout = 32.5 dBm
32.0
–10 –8 –6 –4 –2 0 2 4 6
Input power Pin (dBm)
8
35
10
Efficiency Eff (%)
Efficiency Eff (%)
60
0
Efficiency Eff (%)
Output power Pout (dBm)
100
Pin = 0 dBm
90
Pout
Vdd = 3.5 V
80
Vapc = control
70
Tc = 25°C
60
Eff
50
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Control voltage range Vapc (V)
Efficiency Eff (%)
Output power Pout (dBm)
DCS mode (1710 MHz) Pout, Eff vs. Vapc
40
30
20
10
0
–10
–20
–30
–40
–50
–60
PF08134B
DCS mode (1710 MHz to 1785 MHz) (cont.)
DCS mode (1710 MHz) Idd vs. Pout
DCS mode (1785 MHz) Idd vs. Pout
10
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
1 Tc = 25°C
Supply current Idd (A)
Supply current Idd (A)
10
0.1
0.01
–50 –40 –30 –20 –10 0 10 20 30
Output power Pout (dBm)
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
1 Tc = 25°C
0.1
0.01
–50 –40 –30 –20 –10 0 10 20 30
Output power Pout (dBm)
40
Pout
34
55
33
50
32
Eff
31
45
Vdd = 3.5 V
Tc = 25°C
Pout : Vapc = 2.2 V
Eff : Pout = 32.5 dBm
40
30
35
1600 1650 1700 1750 1800 1850 1900 1950 2000
Frequency f (MHz)
Output power Pout (dBm)
DCS mode (1710 MHz) Pout vs. Pin (Temperature variation)
36
Vapc = 2.2 V
35
Vdd = 3.5 V, Tc = 25°C
34
Vdd = 3.5 V, Tc = 85°C
33
Vdd = 3.1 V, Tc = 85°C
32
31
–8
–6
–4 –2
0
2
4
Input power Pin (dBm)
Rev.1.01, May 13, 2004, page 10 of 13
6
8
37
36
35
34
1710 MHz
1785 MHz
33
32
3.1
3.3
Pin = 0 dBm
Vapc = 2.2 V
Tc = 25°C
3.5 3.7 3.9 4.1 4.3
Supply voltage Vdd (V)
4.5
DCS mode (1785 MHz) Pout vs. Pin (Temperature variation)
36
Vapc = 2.2 V
Output power Pout (dBm)
60
Output power Pout (dBm)
DCS mode Pout vs. Vdd
35
Efficiency Eff (%)
Output power Pout (dBm)
DCS, PCS mode Pout, Eff vs. f
40
35
34
Vdd = 3.5 V, Tc = 25°C
33
Vdd = 3.5 V, Tc = 85°C
32
Vdd = 3.1 V, Tc = 85°C
31
–8
–6
–4 –2
0
2
4
Input power Pin (dBm)
6
8
PF08134B
PCS mode (1850 MHz to 1910 MHz)
PCS mode (1910 MHz) Pout, Eff vs. Vapc
40
30
20
10
0
–10
–20
–30
–40
–50
–60
100
90
Pout
80
70
60
Eff
50
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Control voltage range Vapc (V)
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25°C
PCS mode (1910 MHz) Eff vs. Pout
PCS mode (1850 MHz) Eff vs. Pout
60
Pin = 0 dBm
50 Vdd = 3.5 V
Vapc = control
40 Tc = 25°C
Efficiency Eff (%)
30
20
10
0
5
10
15
20
25
30
Output power Pout (dBm)
Pin = 0 dBm
50 Vdd = 3.5 V
Vapc = control
40 Tc = 25°C
30
20
10
0
35
0
Vdd = 3.5 V
Tc = 25°C
55
35
Eff
50
34
Pout
45
33
32
–8
40
Pout : Vapc = 2.2 V
Eff : Pout = 32 dBm
–6
–4
–2
0
2
4
Input power Pin (dBm)
Rev.1.01, May 13, 2004, page 11 of 13
6
8
35
Output power Pout (dBm)
36
10
15
20
25
30
Output power Pout (dBm)
35
PCS mode (1910 MHz) Pout, Eff vs. Pin
60
Efficiency Eff (%)
Output power Pout (dBm)
PCS mode (1850 MHz) Pout, Eff vs. Pin
37
5
37
36
60
Vdd = 3.5 V
Tc = 25°C
55
Eff
50
35
34
33
32
–8
45
Pout
40
Pout : Vapc = 2.2 V
Eff : Pout = 32 dBm
–6
–4
–2
0
2
4
Input power Pin (dBm)
6
8
35
Efficiency Eff (%)
Efficiency Eff (%)
60
0
Efficiency Eff (%)
Output power Pout (dBm)
100
Pin = 0 dBm
90
Vdd = 3.5 V
Pout
80
Vapc = control
70
Tc = 25°C
60
Eff
50
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Control voltage range Vapc (V)
Efficiency Eff (%)
Output power Pout (dBm)
PCS mode (1850 MHz) Pout, Eff vs. Vapc
40
30
20
10
0
–10
–20
–30
–40
–50
–60
PF08134B
PCS mode (1850 MHz to 1910 MHz) (cont.)
PCS mode (1850 MHz) Idd vs. Pout
PCS mode (1910 MHz) Idd vs. Pout
10
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
1 Tc = 25°C
Supply current Idd (A)
Supply current Idd (A)
10
0.1
0.01
–50 –40 –30 –20 –10 0 10 20 30
Output power Pout (dBm)
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
1 Tc = 25°C
0.1
0.01
–50 –40 –30 –20 –10 0 10 20 30
Output power Pout (dBm)
40
Pout
34
55
33
50
32
45
Eff
31
Vdd = 3.5 V
Tc = 25°C
Pout : Vapc = 2.2 V
Eff : Pout = 32 dBm
40
30
35
1600 1650 1700 1750 1800 1850 1900 1950 2000
Frequency f (MHz)
Output power Pout (dBm)
PCS mode (1850 MHz) Pout vs. Pin (Temperature variation)
35
Vapc = 2.2 V
34
Vdd = 3.5 V, Tc = 25°C
33
Vdd = 3.5 V, Tc = 85°C
32
Vdd = 3.1 V, Tc = 85°C
31
30
29
–8
–6
–4 –2
0
2
4
Input power Pin (dBm)
Rev.1.01, May 13, 2004, page 12 of 13
6
8
37
36
35
34
33
1850 MHz
1910 MHz
32
31
3.1
3.3
Pin = 0 dBm
Vapc = 2.2 V
Tc = 25°C
3.5 3.7 3.9 4.1 4.3
Supply voltage Vdd (V)
4.5
PCS mode (1910 MHz) Pout vs. Pin (Temperature variation)
35
Vapc = 2.2 V
34
Output power Pout (dBm)
60
Output power Pout (dBm)
PCS mode Pout vs. Vdd
35
Efficiency Eff (%)
Output power Pout (dBm)
DCS, PCS mode Pout, Eff vs. f
40
33
Vdd = 3.5 V, Tc = 25°C
32
Vdd = 3.5 V, Tc = 85°C
31
Vdd = 3.1 V, Tc = 85°C
30
29
–8
–6
–4 –2
0
2
4
Input power Pin (dBm)
6
8
PF08134B
Package Dimensions
Unit: mm
10.0 ± 0.3
1.5 max
7
G
6
5
1
2
G
3
4
8.0 ± 0.3
8
5
G6
8 7
(Upper side)
4
G3
2
1
(0.80)
(3.20)
(0.80)
(1.80)
(0.60)
1: Pin GSM
2: Vapc
3: Vdd1
4: Pout GSM
5: Pout DCS & Pout PCS
6: Vdd2
7: Vctl
8: Pin DCS & Pin PCS
G: GND
(1.20)
(2.50)
(3.90)
(Bottom side)
Rev.1.01, May 13, 2004, page 13 of 13
Package Code
JEDEC
JEITA
Mass (reference value)
RF-Q-8
—
—
—
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