PF08134B MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone REJ03G0075-0101Z Rev.1.01 May 13, 2004 Application • Triple band amplifier for GSM850 (824 MHz to 849 MHz) and DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz). • For 3.5 V & GPRS Class12 operation compatible Features • • • • • • All in one including output matching circuit Simple external circuit Simple power control High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 8.0 × 10.0 × 1.5 mm Max High efficiency 47% Typ at 33.5 dBm for GSM850 47% Typ at 32.5 dBm for DCS1800 47% Typ at 32.0 dBm for DCS1900 Pin Arrangement • RF-Q-8 5 G6 8 7 4 G3 2 1 Rev.1.01, May 13, 2004, page 1 of 13 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS & Pout PCS 6: Vdd2 7: Vctl 8: Pin DCS & Pin PCS G: GND PF08134B Absolute Maximum Ratings *1 (Tc = 25°C) Item Symbol Vdd Supply voltage Rating 7.0 Unit V V A Supply current Idd GSM 5.0 3.5 Vctl voltage Idd DCS Vctl 2 4 A V Vapc voltage Input power Vapc Pin 4 10 V dBm −30 to +100 −40 to +100 °C °C 5 3 W W 2 Operating case temperature * Storage temperature Tc (op) Tstg Output power Pout GSM Pout DCS Remark at no-operation at operation (50 Ω load) Notes: 1. The maximum ratings shall be valid over both the GSM850-band (824 to 849 MHz), and the DCS1800/1900-band (1710 to 1785 MHz, 1850 to 1910 MHz). 2. These are specified at pulsed operation with pulse width = 1154 µs and duty cycle of 2:8. Electrical Characteristics for DC (Tc = 25°C) Min Typ Max Unit Test Condition Drain cutoff current Item Ids Symbol — — 20 µA Vapc control current Iapc — — 2.0 mA Vdd = 4.7 V, Vapc = 0 V, Vctl = 0.2 V Vapc = 2.2 V Vctl control current Ictl — — 2 µA Vctl = 3 V Rev.1.01, May 13, 2004, page 2 of 13 PF08134B Electrical Characteristics for GSM850 band (Tc = 25°C) Test conditions unless otherwise noted: f = 824 to 849 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50 Ω, Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used. Min Typ Max Unit Frequency range Item f Symbol 824 — 849 MHz Test Condition Band select (GSM active) Vctl 2.0 — 2.8 V Input power Pin –2 — 2 dBm Control voltage range Vapc 0.2 — 2.2 V Supply voltage Vdd 3.1 3.5 4.5 V Total efficiency ηT 40 47 — % 2nd harmonic distortion 2nd H.D. — –10.5 –2.5 dBm 3rd harmonic distortion 3rd H.D. — –16.5 –2.5 dBm 4th~8th harmonic distortion 4th~8th H.D. — — –2.5 dBm Input VSWR VSWR (in) — 1.5 3 — Output power (1) Pout (1) 33.5 34.0 — dBm Vapc = 2.2 V Output power (2) Pout (2) 32.0 32.5 — dBm Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C Pout GSM = 33.5 dBm, Vapc controlled Idd at Low power — — — 300 mA Pout GSM = 7 dBm Isolation — — –48 –37 dBm Vapc = 0.2 V Isolation at DCS RF-output when GSM is active — — –25 –18 dBm Pout GSM = 33.5 dBm, Measured at f = 1648 to 1698 MHz — 1 2 Switching time tr, tf µs Pout GSM = 5 to 33.5 dBm Stability — No parasitic oscillation < –36 dBm — Vdd = 3.1 to 4.5 V, Pout GSM ≤ 33.5 dBm, Vapc GSM ≤ 2.2 V, Rg = 50 Ω, Output VSWR = 6 : 1 All phase angles Load VSWR tolerance — No degradation or Permanent degradation — Vdd = 3.1 to 4.5 V, Pout GSM ≤ 33.5 dBm, Vapc GSM ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Output VSWR = 10 : 1 All phase angles Load VSWR tolerance at GPRS CLASS 12 operation — No degradation or Permanent degradation — Vdd = 3.1 to 4.2 V, Pout GSM ≤ 33.5 dBm, Vapc GSM ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Tc ≤ 90°C, Output VSWR = 10 : 1 All phase angles Slope Pout/Vapc — — 160 200 dB/V AM output — — 15 20 % Rev.1.01, May 13, 2004, page 3 of 13 Pout GSM = 5 to 33.5 dBm Pout GSM = 5 to 33.5 dBm, 4% AM modulation at input 50 kHz modulation frequency PF08134B Electrical Characteristics for DCS1800 band (Tc = 25°C) Test conditions unless otherwise noted: f = 1710 to 1785 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50 Ω, Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used. Item Symbol Min Typ Max Unit 1710 — 1785 MHz 0 — 0.1 V Pin –2 — 2 dBm Vapc 0.2 — 2.2 V Supply voltage Vdd 3.1 3.5 4.5 V Total efficiency ηT 40 47 — % 2nd harmonic distortion 2nd H.D. — –14.5 –2.5 dBm 3rd harmonic distortion 3rd H.D. — –7.5 –2.5 dBm 4th~8th harmonic distortion 4th~8th H.D. — — –2.5 dBm Input VSWR VSWR (in) — 1.5 3 — Output power (1) Pout (1) 32.5 33.5 — dBm Vapc = 2.2 V Output power (2) Pout (2) 31.0 32.0 — dBm Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C Frequency range f Band select (DCS active) Vctl Input power Control voltage range Test Condition Pout DCS = 32.5 dBm, Vapc controlled Idd at Low power — — — 150 mA Pout DCS = 5 dBm Isolation — — –42 –37 dBm Vapc = 0.2 V Switching time tr, tf — 1 2 µs Pout DCS = 0 to 32.5 dBm Stability — No parasitic oscillation < –36 dBm — Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.5 dBm, Vapc DCS ≤ 2.2 V, Rg = 50 Ω, Output VSWR = 6 : 1 All phase angles Load VSWR tolerance — No degradation or Permanent degradation — Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.5 dBm, Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Output VSWR = 10 : 1 All phase angles Load VSWR tolerance at GPRS CLASS 12 operation — No degradation or Permanent degradation — Vdd = 3.1 to 4.2 V, Pout DCS ≤ 32.5 dBm, Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Tc ≤ 90°C, Output VSWR = 10 : 1 All phase angles Slope Pout/Vapc — — 160 200 dB/V AM output — — 15 20 % Rev.1.01, May 13, 2004, page 4 of 13 Pout DCS = 0 to 32.5 dBm Pout DCS = 0 to 32.5 dBm, 4% AM modulation at input 50 kHz modulation frequency PF08134B Electrical Characteristics for DCS1900 band (Tc = 25°C) Test conditions unless otherwise noted: f = 1850 to 1910 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50 Ω, Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used. Item Symbol Min Typ Max Unit 1850 — 1910 MHz 0 — 0.1 V Pin –2 — 2 dBm Vapc 0.2 — 2.2 V Supply voltage Vdd 3.1 3.5 4.5 V Total efficiency ηT 40 47 — % 2nd harmonic distortion 2nd H.D. — –15 –3 dBm 3rd harmonic distortion 3rd H.D. — –8 –3 dBm 4th~8th harmonic distortion 4th~8th H.D. — — –3 dBm Input VSWR VSWR (in) — 1.5 3 — Output power (1) Pout (1) 32.0 33.0 — dBm Vapc = 2.2 V Output power (2) Pout (2) 30.5 31.5 — dBm Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C Frequency range f Band select (DCS active) Vctl Input power Control voltage range Test Condition Pout DCS = 32.0 dBm, Vapc controlled Idd at Low power — — — 150 mA Pout DCS = 5 dBm Isolation — — –42 –37 dBm Vapc = 0.2 V Switching time tr, tf — 1 2 µs Pout DCS = 0 to 32.0 dBm Stability — No parasitic oscillation < –36 dBm — Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm, Vapc DCS ≤ 2.2 V, Rg = 50 Ω, Output VSWR = 6 : 1 All phase angles Load VSWR tolerance — No degradation or Permanent degradation — Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm, Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Output VSWR = 10 : 1 All phase angles Load VSWR tolerance at GPRS CLASS 12 operation — No degradation or Permanent degradation — Vdd = 3.1 to 4.2 V, Pout DCS ≤ 32.0 dBm, Vapc DCS ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Tc ≤ 90°C, Output VSWR = 10 : 1 All phase angles Slope Pout/Vapc — — 160 200 dB/V AM output — — 15 20 % Rev.1.01, May 13, 2004, page 5 of 13 Pout DCS = 0 to 32.0 dBm Pout DCS = 0 to 32.0 dBm, 4% AM modulation at input 50 kHz modulation frequency PF08134B Circuit Diagram PIN7 Vctl PIN6 Vdd2 PIN8 Pin DCS PIN5 Pout DCS PIN1 Pin GSM PIN4 Pout GSM Bias circuit PIN2 Vapc Rev.1.01, May 13, 2004, page 6 of 13 PIN3 Vdd1 PF08134B Characteristic Curves GSM mode (824 MHz to 849 MHz) GSM mode (849 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 –10 –20 –30 –40 –50 –60 100 90 Pout 80 70 60 Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Control voltage range Vapc (V) Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25°C GSM mode (849 MHz) Eff vs. Pout GSM mode (824 MHz) Eff vs. Pout 60 20 10 0 5 10 15 20 25 30 35 Output power Pout (dBm) Input power Pin (dBm) Rev.1.01, May 13, 2004, page 7 of 13 30 20 10 0 40 GSM mode (824 MHz) Pout, Eff vs. Pin 36.0 60 35.5 Vdd = 3.5 V Tc = 25°C Pout 55 35.0 34.5 50 34.0 Eff 33.5 45 33.0 32.5 32.0 40 Pout : Vapc = 2.2 V 31.5 Eff : Pout = 33.5 dBm 31.0 35 –10 –8 –6 –4 –2 0 2 4 6 8 10 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 0 5 10 15 20 25 30 35 Output power Pout (dBm) 40 GSM mode (849 MHz) Pout, Eff vs. Pin 36.0 60 35.5 Vdd = 3.5 V Tc = 25°C 55 35.0 34.5 Pout 50 34.0 33.5 Eff 33.0 45 32.5 32.0 40 Pout : Vapc = 2.2 V 31.5 Eff : Pout = 33.5 dBm 35 31.0 –10 –8 –6 –4 –2 0 2 4 6 8 10 Input power Pin (dBm) Efficiency Eff (%) 30 Output power Pout (dBm) Output power Pout (dBm) Efficiency Eff (%) Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C Efficiency Eff (%) Efficiency Eff (%) 60 0 Efficiency Eff (%) Output power Pout (dBm) 100 Pin = 0 dBm 90 Pout Vdd = 3.5 V 80 Vapc = control 70 Tc = 25°C 60 Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Control voltage range Vapc (V) Efficiency Eff (%) Output power Pout (dBm) GSM mode (824 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 –10 –20 –30 –40 –50 –60 PF08134B GSM mode (824 MHz to 849 MHz) (cont.) GSM mode (824 MHz) Idd vs. Pout GSM mode (849 MHz) Idd vs. Pout 10 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C Supply current Idd (A) Supply current Idd (A) 10 0.1 0.01 –50 –40 –30 –20 –10 0 10 20 30 Output power Pout (dBm) Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 0.1 0.01 –50 –40 –30 –20 –10 0 10 20 30 Output power Pout (dBm) 40 Eff 50 Pout 35 45 34 33 32 31 650 40 Pin = 0 dBm Vdd = 3.5 V Tc = 25°C Pout : Vapc = 2.2 V Eff : Pout = 33.5 dBm 700 750 800 850 900 Frequency f (MHz) 35 30 950 Output power Pout (dBm) GSM mode (824 MHz) Pout vs. Pin (Temperature variation) 36 Vapc = 2.2 V Vdd = 3.5 V, Tc = 25°C 35 Vdd = 3.5 V, Tc = 85°C 34 Vdd = 3.1 V, Tc = 85°C 33 32 31 –8 –6 –4 –2 0 2 4 Input power Pin (dBm) Rev.1.01, May 13, 2004, page 8 of 13 6 8 38 37 824 MHz 36 849 MHz 35 Vdd = 3.5 V Tc = 25°C Pout : Vapc = 2.2 V Eff : Pout = 33.5 dBm 34 33 3.1 3.3 3.5 3.7 3.9 4.1 4.3 Supply voltage Vdd (V) 4.5 GSM mode (849 MHz) Pout vs. Pin (Temperature variation) 36 Vapc = 2.2 V Output power Pout (dBm) 36 55 Output power Pout (dBm) GSM mode Pout vs. Vdd 37 Efficiency Eff (%) Output power Pout (dBm) GSM mode Pout, Eff vs. f 40 35 Vdd = 3.5 V, Tc = 25°C 34 Vdd = 3.5 V, Tc = 85°C 33 Vdd = 3.1 V, Tc = 85°C 32 31 –8 –6 –4 –2 0 2 4 Input power Pin (dBm) 6 8 PF08134B DCS mode (1710 MHz to 1785 MHz) DCS mode (1785 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 –10 –20 –30 –40 –50 –60 100 90 Pout 80 70 60 Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Control voltage range Vapc (V) Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25°C DCS mode (1785 MHz) Eff vs. Pout DCS mode (1710 MHz) Eff vs. Pout 60 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C Efficiency Eff (%) 30 20 10 0 5 10 15 20 25 30 Output power Pout (dBm) Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 35 55 33.5 50 Eff 33.0 32.5 45 40 Pout : Vapc = 2.2 V Eff : Pout = 32.5 dBm 32.0 –10 –8 –6 –4 –2 0 2 4 Input power Pin (dBm) Rev.1.01, May 13, 2004, page 9 of 13 6 8 35 10 Output power Pout (dBm) 34.0 Pout Vdd = 3.5 V Tc = 25°C 5 10 15 20 25 30 Output power Pout (dBm) 35 DCS mode (1785 MHz) Pout, Eff vs. Pin 60 Efficiency Eff (%) Output power Pout (dBm) DCS mode (1710 MHz) Pout, Eff vs. Pin 34.5 0 34.5 34.0 60 Vdd = 3.5 V Tc = 25°C 55 Pout 33.5 50 Eff 33.0 32.5 45 40 Pout : Vapc = 2.2 V Eff : Pout = 32.5 dBm 32.0 –10 –8 –6 –4 –2 0 2 4 6 Input power Pin (dBm) 8 35 10 Efficiency Eff (%) Efficiency Eff (%) 60 0 Efficiency Eff (%) Output power Pout (dBm) 100 Pin = 0 dBm 90 Pout Vdd = 3.5 V 80 Vapc = control 70 Tc = 25°C 60 Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Control voltage range Vapc (V) Efficiency Eff (%) Output power Pout (dBm) DCS mode (1710 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 –10 –20 –30 –40 –50 –60 PF08134B DCS mode (1710 MHz to 1785 MHz) (cont.) DCS mode (1710 MHz) Idd vs. Pout DCS mode (1785 MHz) Idd vs. Pout 10 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C Supply current Idd (A) Supply current Idd (A) 10 0.1 0.01 –50 –40 –30 –20 –10 0 10 20 30 Output power Pout (dBm) Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 0.1 0.01 –50 –40 –30 –20 –10 0 10 20 30 Output power Pout (dBm) 40 Pout 34 55 33 50 32 Eff 31 45 Vdd = 3.5 V Tc = 25°C Pout : Vapc = 2.2 V Eff : Pout = 32.5 dBm 40 30 35 1600 1650 1700 1750 1800 1850 1900 1950 2000 Frequency f (MHz) Output power Pout (dBm) DCS mode (1710 MHz) Pout vs. Pin (Temperature variation) 36 Vapc = 2.2 V 35 Vdd = 3.5 V, Tc = 25°C 34 Vdd = 3.5 V, Tc = 85°C 33 Vdd = 3.1 V, Tc = 85°C 32 31 –8 –6 –4 –2 0 2 4 Input power Pin (dBm) Rev.1.01, May 13, 2004, page 10 of 13 6 8 37 36 35 34 1710 MHz 1785 MHz 33 32 3.1 3.3 Pin = 0 dBm Vapc = 2.2 V Tc = 25°C 3.5 3.7 3.9 4.1 4.3 Supply voltage Vdd (V) 4.5 DCS mode (1785 MHz) Pout vs. Pin (Temperature variation) 36 Vapc = 2.2 V Output power Pout (dBm) 60 Output power Pout (dBm) DCS mode Pout vs. Vdd 35 Efficiency Eff (%) Output power Pout (dBm) DCS, PCS mode Pout, Eff vs. f 40 35 34 Vdd = 3.5 V, Tc = 25°C 33 Vdd = 3.5 V, Tc = 85°C 32 Vdd = 3.1 V, Tc = 85°C 31 –8 –6 –4 –2 0 2 4 Input power Pin (dBm) 6 8 PF08134B PCS mode (1850 MHz to 1910 MHz) PCS mode (1910 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 –10 –20 –30 –40 –50 –60 100 90 Pout 80 70 60 Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Control voltage range Vapc (V) Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25°C PCS mode (1910 MHz) Eff vs. Pout PCS mode (1850 MHz) Eff vs. Pout 60 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C Efficiency Eff (%) 30 20 10 0 5 10 15 20 25 30 Output power Pout (dBm) Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 35 0 Vdd = 3.5 V Tc = 25°C 55 35 Eff 50 34 Pout 45 33 32 –8 40 Pout : Vapc = 2.2 V Eff : Pout = 32 dBm –6 –4 –2 0 2 4 Input power Pin (dBm) Rev.1.01, May 13, 2004, page 11 of 13 6 8 35 Output power Pout (dBm) 36 10 15 20 25 30 Output power Pout (dBm) 35 PCS mode (1910 MHz) Pout, Eff vs. Pin 60 Efficiency Eff (%) Output power Pout (dBm) PCS mode (1850 MHz) Pout, Eff vs. Pin 37 5 37 36 60 Vdd = 3.5 V Tc = 25°C 55 Eff 50 35 34 33 32 –8 45 Pout 40 Pout : Vapc = 2.2 V Eff : Pout = 32 dBm –6 –4 –2 0 2 4 Input power Pin (dBm) 6 8 35 Efficiency Eff (%) Efficiency Eff (%) 60 0 Efficiency Eff (%) Output power Pout (dBm) 100 Pin = 0 dBm 90 Vdd = 3.5 V Pout 80 Vapc = control 70 Tc = 25°C 60 Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Control voltage range Vapc (V) Efficiency Eff (%) Output power Pout (dBm) PCS mode (1850 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 –10 –20 –30 –40 –50 –60 PF08134B PCS mode (1850 MHz to 1910 MHz) (cont.) PCS mode (1850 MHz) Idd vs. Pout PCS mode (1910 MHz) Idd vs. Pout 10 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C Supply current Idd (A) Supply current Idd (A) 10 0.1 0.01 –50 –40 –30 –20 –10 0 10 20 30 Output power Pout (dBm) Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 0.1 0.01 –50 –40 –30 –20 –10 0 10 20 30 Output power Pout (dBm) 40 Pout 34 55 33 50 32 45 Eff 31 Vdd = 3.5 V Tc = 25°C Pout : Vapc = 2.2 V Eff : Pout = 32 dBm 40 30 35 1600 1650 1700 1750 1800 1850 1900 1950 2000 Frequency f (MHz) Output power Pout (dBm) PCS mode (1850 MHz) Pout vs. Pin (Temperature variation) 35 Vapc = 2.2 V 34 Vdd = 3.5 V, Tc = 25°C 33 Vdd = 3.5 V, Tc = 85°C 32 Vdd = 3.1 V, Tc = 85°C 31 30 29 –8 –6 –4 –2 0 2 4 Input power Pin (dBm) Rev.1.01, May 13, 2004, page 12 of 13 6 8 37 36 35 34 33 1850 MHz 1910 MHz 32 31 3.1 3.3 Pin = 0 dBm Vapc = 2.2 V Tc = 25°C 3.5 3.7 3.9 4.1 4.3 Supply voltage Vdd (V) 4.5 PCS mode (1910 MHz) Pout vs. Pin (Temperature variation) 35 Vapc = 2.2 V 34 Output power Pout (dBm) 60 Output power Pout (dBm) PCS mode Pout vs. Vdd 35 Efficiency Eff (%) Output power Pout (dBm) DCS, PCS mode Pout, Eff vs. f 40 33 Vdd = 3.5 V, Tc = 25°C 32 Vdd = 3.5 V, Tc = 85°C 31 Vdd = 3.1 V, Tc = 85°C 30 29 –8 –6 –4 –2 0 2 4 Input power Pin (dBm) 6 8 PF08134B Package Dimensions Unit: mm 10.0 ± 0.3 1.5 max 7 G 6 5 1 2 G 3 4 8.0 ± 0.3 8 5 G6 8 7 (Upper side) 4 G3 2 1 (0.80) (3.20) (0.80) (1.80) (0.60) 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS & Pout PCS 6: Vdd2 7: Vctl 8: Pin DCS & Pin PCS G: GND (1.20) (2.50) (3.90) (Bottom side) Rev.1.01, May 13, 2004, page 13 of 13 Package Code JEDEC JEITA Mass (reference value) RF-Q-8 — — — Sales Strategic Planning Div. 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