PF08122B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-1400H (Z) Rev.8 Jul. 2002 Application • Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz). • For 3.5 V & GPRS Class12 operation compatible Features • All in one including output matching circuit • Simple external circuit • Simple power control • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ • High efficiency : 55% Typ at 35.0 dBm for E-GSM 50% Typ at 32.5 dBm for DCS1800 • Lower consume current at low power 100 mA Typ at 7 dBm for E-GSM 60 mA Typ at 5 dBm for DCS1800 Pin Arrangement • RF-K-8A 5 G6 8 7 G 12 G 4 G 3 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND PF08122B Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Remark Supply voltage Vdd 7.0 V at no-operation 5.0 V at operation (50 Ω load) Idd GSM 3.5 A Idd DCS 2 A Vctl voltage Vctl 4 V Vapc voltage Vapc 4 V Input power Pin 10 dBm Operating case temperature Tc (op) −25 to +90 °C Storage temperature Tstg −30 to +100 °C Output power Pout GSM 5 W Pout DCS 3 W Supply current Note: The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz), and the DCS1800-band (1710 to 1785 MHz). Electrical Characteristics for DC (Tc = 25°C) Item Symbol Min Typ Max Unit Test Condition Drain cutoff current Ids 20 µA Vdd = 4.7 V, Vapc = 0 V, Vctl = 0.2 V Vapc control current Iapc 2.0 mA Vapc = 2.2 V Vctl control current Ictl 2 µA Vctl = 3 V Rev.8, Jul. 2002, page 2 of 11 PF08122B Electrical Characteristics for GSM900 band (Tc = 25°C) Test conditions unless otherwise noted: f = 880 to 915 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50 Ω, Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used. Item Symbol Min Typ Max Unit Test Condition Frequency range f 880 915 MHz Band select (GSM active) Vctl 2.0 2.8 V Input power Pin –2 0 2 dBm Control voltage range Vapc 0.2 2.2 V Supply voltage Vdd 3.0 3.5 4.5 V Total efficiency ηT 47 55 % 2nd harmonic distortion 2nd H.D. −45 −35 dBc 3rd harmonic distortion 3rd H.D. −45 −35 dBc 4th~8th harmonic distortion 4th~8th H.D. −35 dBc Input VSWR VSWR (in) 1.5 3 Output power (1) Pout (1) 35.0 36.0 dBm Vapc = 2.2 V Output power (2) Pout (2) 33.5 34.5 dBm Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C Idd at Low power 100 300 mA Pout GSM = 7 dBm Isolation −50 −37 dBm Vapc = 0.2 V Isolation at DCS RF-output when GSM is active −25 −18 dBm Pout GSM = 35 dBm, Measured at f = 1760 to 1830 MHz Switching time t r, t f 1 2 µs Pout GSM = 5 to 35 dBm Stability No parasitic oscillation Vdd = 3.1 to 4.5 V, Pout ≤ 35 dBm, Vapc GSM ≤ 2.2 V, Rg = 50 Ω, Tc = 25°C, Output VSWR = 6 : 1 All phases Load VSWR tolerance No degradation Vdd = 3.1 to 4.5 V, Pout GSM ≤ 35 dBm, Vapc GSM ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Tc = 25°C, Output VSWR = 10 : 1 All phases Load VSWR tolerance at GPRS CLASS 12 operation No degradation Vdd = 3.1 to 4.2 V, Pout GSM ≤ 35 dBm, Vapc GSM ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Tc ≤ 90°C, Output VSWR = 10 : 1 All phases Slope Pout/Vapc 160 200 dB/V Pout GSM = 5 to 35 dBm AM output 15 30 % Pout GSM = 5 to 35 dBm, 4% AM modulation at input 50 kHz modulation frequency Pout GSM = 35 dBm, Vapc = controlled Rev.8, Jul. 2002, page 3 of 11 PF08122B Electrical Characteristics for DCS1800 band (Tc = 25°C) Test conditions unless otherwise noted: f = 1710 to 1785 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0.2 V, Rg = Rl = 50 Ω, Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used. Item Symbol Min Typ Max Unit Frequency range f 1710 1785 MHz Band select (DCS active) Vctl 0 0.2 V Input power Pin –2 0 2 dBm Control voltage range Vapc 0.2 2.2 V Supply voltage Vdd 3.0 3.5 4.5 V Total efficiency ηT 43 50 % 2nd harmonic distortion 2nd H.D. −45 −35 dBc 3rd harmonic distortion 3rd H.D. −45 −35 dBc 4th~8th harmonic distortion 4th~8th H.D. –35 dBc Input VSWR VSWR (in) 1.5 3 Output power (1) Pout (1) 32.5 33.5 dBm Vapc = 2.2 V Output power (2) Pout (2) 31.0 32.0 dBm Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C, Idd at Low power 60 150 mA Pout DCS = 5 dBm Isolation −47 −37 dBm Vapc = 0.2 V Switching time t r, t f 1 2 µs Pout DCS = 0 to 32.5 dBm Stability No parasitic oscillation Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.5 dBm, Vapc ≤ 2.2 V, Rg = 50 Ω, Output VSWR = 6 : 1 All phases Load VSWR tolerance No degradation Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.5 dBm, Vapc ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Tc = 25°C, Output VSWR = 10 : 1 All phases Load VSWR tolerance at GPRS CLASS 12 operation No degradation Vdd = 3.1 to 4.2 V, Pout DCS ≤ 32.5 dBm, Vapc ≤ 2.2 V, Rg = 50 Ω, t = 20 sec., Tc ≤ 90°C, Output VSWR = 10 : 1 All phases Slope Pout/Vapc 160 200 dB/V Pout DCS = 0 to 32.5 dBm AM output 15 30 % Pout DCS = 0 to 32.5 dBm, 4% AM modulation at input 50 kHz modulation frequency Rev.8, Jul. 2002, page 4 of 11 Test Condition Pout DCS = 32.5 dBm, Vapc = controlled PF08122B Circuit Diagram PIN7 Vctl PIN6 Vdd2 PIN8 Pin DCS PIN5 Pout DCS PIN1 Pin GSM PIN4 Pout GSM Bias circuit PIN2 Vapc PIN3 Vdd1 Rev.8, Jul. 2002, page 5 of 11 PF08122B Characteristic Curves GSM mode (915 MHz) Pout, Eff vs. Vapc 40 100 30 Pin = 0 dBm 90 20 Vdd = 3.5 V 80 10 Vapc = control 70 Eff 60 0 Tc = 25°C Pout 50 –10 40 –20 30 –30 20 –40 10 –50 –60 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) GSM mode (880 MHz) Eff vs. Pout GSM mode (915 MHz) Eff vs. Pout 60 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 Eff (%) 20 10 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 0 0 5 10 15 20 25 Pout (dBm) 30 35 40 0 GSM mode (880 MHz) Pout, Eff vs. Pin Eff 37.0 36.0 53 Vdd = 3.5 V 36.5 Tc = 25°C 49 Pout 47 Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 35.5 –10 –8 –6 –4 –2 0 2 4 Pin (dBm) Rev.8, Jul. 2002, page 6 of 11 6 30 35 40 GSM mode (915 MHz) Pout, Eff vs. Pin 51 36.5 15 20 25 Pout (dBm) 37.0 45 8 10 Pout (dBm) Vdd = 3.5 V 37.5 Tc = 25°C 10 55 Eff (%) 38.0 5 60 Eff 57 36.0 54 Pout 35.5 35.0 51 48 Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 34.5 –10 –8 –6 –4 –2 0 2 4 Pin (dBm) 6 45 8 10 Eff (%) Eff (%) 60 Pout (dBm) Eff (%) Pout (dBm) GSM mode (880 MHz) Pout, Eff vs. Vapc 40 100 30 Pin = 0 dBm 90 20 Vdd = 3.5 V 80 10 Vapc = control 70 Eff 60 0 Tc = 25°C Pout 50 –10 40 –20 30 –30 20 –40 10 –50 –60 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) Eff (%) Pout (dBm) GSM mode (880MHz to 915 MHz) PF08122B GSM mode (880MHz to 915 MHz) (cont) GSM mode (880 MHz) Idd vs. Pout GSM mode (915 MHz) Idd vs. Pout 10 10 Idd (A) Idd (A) Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 0.1 0.01 –50 –40 –30 –20 –10 0 10 Pout (dBm) 20 30 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 0.1 40 0.01 –50 –40 –30 –20 –10 0 10 Pout (dBm) 60 39.0 55 38.0 50 35 45 Vdd = 3.5 V Tc = 25°C Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 34 40 Pout (dBm) 36 Eff (%) Pout (dBm) 40 Eff Pout 33 35 800 820 840 860 880 900 920 940 960 Freq (MHz) 880 MHz 37.0 915 MHz 36.0 Vdd = 3.5 V Tc = 25°C Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 35.0 34.0 3 3.2 3.4 3.6 3.8 Vdd (V) 4 4.2 4.4 GSM mode (880 MHz) Pout vs. Pin (Temperature variation) 37.0 Vapc = 2.2 V Vdd = 3.5 V, Tc = 25°C GSM mode (915 MHz) Pout vs. Pin (Temperature variation) 37.0 Vapc = 2.2 V 36.0 36.0 Vdd = 3.5 V, Tc = 85°C 35.0 Pout (dBm) Pout (dBm) 30 GSM mode Pout vs. Vdd GSM mode Pout, Eff vs. Freq 38 37 20 Vdd = 3.1 V, Tc = 85°C 34.0 33.0 –8 –6 –4 –2 0 2 Pin (dBm) 4 6 8 Vdd = 3.5 V, Tc = 25°C Vdd = 3.5 V, Tc = 85°C 35.0 Vdd = 3.1 V, Tc = 85°C 34.0 33.0 –8 –6 –4 –2 0 2 Pin (dBm) 4 6 8 Rev.8, Jul. 2002, page 7 of 11 PF08122B DCS mode (1710MHz to 1785 MHz) 40 30 20 10 0 –10 –20 –30 –40 –50 –60 100 90 80 70 60 Pout Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) DCS mode (1710 MHz) Eff vs. Pout DCS mode (1785 MHz) Eff vs. Pout 60 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C Eff (%) 30 20 10 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 0 0 5 10 15 20 Pout (dBm) 25 30 35 0 DCS mode (1710 MHz) Pout, Eff vs. Pin Eff 50 33.0 Vdd = 3.5 V 45 Tc = 25°C 32.5 Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm 40 32.0 –10 –8 –6 –4 –2 0 2 4 6 8 10 Pin (dBm) Rev.8, Jul. 2002, page 8 of 11 Pout (dBm) Pout Eff (%) 33.5 10 15 20 Pout (dBm) 25 30 35 DCS mode (1785 MHz) Pout, Eff vs. Pin 55 34.0 5 33.5 55 33.0 52 32.5 32.0 49 Pout 46 Vdd = 3.5 V Tc = 25°C 31.5 43 Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm 31.0 40 –10 –8 –6 –4 –2 0 2 4 6 8 10 Pin (dBm) Eff Eff (%) Eff (%) 60 Pout (dBm) Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25°C Eff (%) Pout (dBm) DCS mode (1785 MHz) Pout, Eff vs. Vapc 100 Pin = 0 dBm 90 Vdd = 3.5 V 80 Vapc = control 70 Tc = 25°C 60 Pout Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) Eff (%) Pout (dBm) DCS mode (1710 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 –10 –20 –30 –40 –50 –60 PF08122B DCS mode (1710MHz to 1785 MHz) (cont) DCS mode (1710 MHz) Idd vs. Pout DCS mode (1785 MHz) Idd vs. Pout 10 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C Idd (A) Idd (A) 10 0.1 0.01 –50 –40 –30 –20 –10 0 10 Pout (dBm) 20 30 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 0.1 0.01 –50 –40 –30 –20 –10 0 10 Pout (dBm) 40 DCS mode Pout, Eff vs. Freq 50 Eff Vdd = 3.5 V Tc = 25°C Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm 45 40 Pout (dBm) 33 Eff (%) Pout (dBm) 55 Pout 31 Vdd = 3.5 V, Tc = 85°C 32.0 Vdd = 3.1 V, Tc = 85°C 31.0 30.0 –8 –4 –2 0 2 Pin (dBm) 4 6 8 1785 MHz 32.0 3.2 3.4 3.6 3.8 Vdd (V) 4 4.2 4.4 DCS mode (1785 MHz) Pout vs. Pin (Temperature variation) 35.0 Vapc = 2.2 V 34.0 Vdd = 3.5 V, Tc = 25°C 33.0 Vdd = 3.5 V, Tc = 85°C 32.0 Vdd = 3.1 V, Tc = 85°C 31.0 –6 1710 MHz 33.0 3 Pout (dBm) Pout (dBm) DCS mode (1710 MHz) Pout vs. Pin (Temperature variation) 35.0 Vapc = 2.2 V 34.0 Vdd = 3.5 V, Tc = 25°C Pin = 0 dBm 35.0 Vapc = 2.2 V Tc = 25°C 34.0 31.0 30 35 1600 1650 1700 1750 1800 1850 1900 Freq (MHz) 33.0 40 36.0 60 32 30 DCS mode Pout vs. Vdd 35 34 20 30.0 –8 –6 –4 –2 0 2 Pin (dBm) 4 6 8 Rev.8, Jul. 2002, page 9 of 11 PF08122B Package Dimensions Unit: mm 1.6 ± 0.2 7 G 6 5 G 8.0 ± 0.3 8.0 ± 0.3 8 G 1 2 G 3 (Upper side) 4 5 G6 8 7 G 13.75 ± 0.3 (5.375) (5.375) (3.275) (3.275) (1.1) (0.3) (1.6) (1.6) (1.6) (1.6) (3.7) (3.7) (2.4) (3.7) (Bottom side) (2.2) (3.7) (0.7) (1.5) (1.5) (1.3) (1.4) (2.4) (0.3) (1.1) (3.7) 12 4 G 3 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm. Hitachi Code JEDEC JEITA Mass (reference value) Rev.8, Jul. 2002, page 10 of 11 G RF-K-8A PF08122B Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.8, Jul. 2002, page 11 of 11