AS5C512K8

SRAM
SRAM
SRAM
AS5C512K8
AS5C512K8
Austin Semiconductor, Inc.
AS5C512K8
Austin Semiconductor, Inc.
512K
ASSIGNMENT
512K xx 88 SRAM
SRAM
PINPIN
ASSIGNMENT
PIN
ASSIGNMENT
512K
x
8
SRAM
(Top View)
HIGH SPEED SRAM with
HIGH SPEED SRAM with
HIGH SPEED SRAM with
REVOLUTIONARY
REVOLUTIONARYPINOUT
PINOUT
REVOLUTIONARY
AVAILABLE
AS MILITARYPINOUT
(Top
View)
(Top
View)
36-Pin SOJ (DJ, ECJ & SOJ)
36-Pin
SOJ (DJ,
ECJ
& SOJ)
36-Pin
CLCC
(EC)
36-Pin CLCC (EC)
AVAILABLE AS MILITARY
SPECIFICATIONS
AVAILABLE AS MILITARY
SPECIFICATIONS
•SMD
5962-95600
SPECIFICATIONS
•SMD 5962-95600
•SMD
5962-95613
•SMD
5962-95600
•SMD
5962-95613
•MIL-STD-883
•SMD 5962-95613
•MIL-STD-883
•MIL-STD-883
FEATURES
•FEATURES
Ultra High Speed Asynchronous Operation
FEATURES
•• Fully
No Clocks
UltraStatic,
High Speed
Asynchronous Operation
• Ultra High Speed Asynchronous Operation
•• Multiple
center
and ground pins for improved Fully Static,
Nopower
Clocks
• Fully Static, No Clocks
noise
immunity
• Multiple
center power and ground pins for improved
• Multiple center power and ground pins for improved
• Easy
memory
expansion with CE\ and OE\
noise
immunity
noise
immunity
• options
Easy
memory
expansion
• Easy memory
expansionwith
withCE\
CE\and
andOE\
OE\
• All
inputs and outputs are TTL-compatible
options
options
•• Single
+5V and
Power
Supply +/-TTL-compatible
10%
inputs
outputs
•AllAll
inputs and
outputsare
are TTL-compatible
•• Data
Retention
Functionality
Testing
Single
+5V
Power
Supply
+/• Single +5V Power Supply +/-10%
10%
•• Cost
Efficient
Plastic
Packaging
Retention
Functionality
•Data
Data
Retention
FunctionalityTesting
Testing
•• Extended
Testing
OverPackaging
-55ºC to +125ºC for plastics
Efficient
Plastic
•Cost
Cost
Efficient
Plastic
Packaging
•• Plastic
36
pin
PSOJ
is
fully
compatible withfor
the Testing
Over
-55ºC
•Extended
Extended
Testing
Over
-55ºCtoto+125ºC
+125ºC forplastics
plastics
• Ceramic
36
pin
SOJ
and
offered
in
lead
free
finish
3636
pinpin
PSOJ
is isfully
•Plastic
Plastic
PSOJ
fullycompatible
compatiblewith
withthe
the
• TSOPII in Copper Lead Frame for Superior Thermal Ceramic
3636
pin SOJ and offered in lead free finish
Ceramic
2 pin SOJ and offered in lead free finish
Performance
• •3.3V
Future
Offering
3.3V
Future
Offering
• RoHS Compliant Options Available
OPTIONS
OPTIONS
OPTIONS
Timing • •Timing
36-Pin
Flat Pack
Pack (F)
(F)
36-Pin Flat
MARKING
MARKING
MARKING
•
Timing
12ns
access
-12
12ns
access
-12
12ns
access
-12
IS64C5128AL/AS
15ns
access IS61C5128AL/AS
-15
15ns
access
-15
15ns
access
-15
17ns
access
-17
17ns
access
-17
17ns
access
-17
20ns
access
-20
20ns
access
-20
20ns
access
-20
25ns
access
-25
25ns access
-25
HIGH
SPEED
(IS61/64C5128AL)
PIN CONFIGURATION
25ns
access
-25
35ns
access
-35
35ns access
-35
35ns
access
-35
45ns
access
-45
36-Pin
SOJ
(400-mil)
44-Pin TSOP (Type II)
45ns
access
-45
45ns access
-45
44-Pin TSOPII (DGC & DGCR)
•Operating
Operating
Temperature
Ranges
Temperature
Ranges
•• Operating
Temperature
Ranges
o
o
Full
Military
(-55
o o C to +125
o o C)A0
36
NC
1/883C
Full
Military
(-55
CCtoto+125
C)C) /883C
+125
/883C
Full
Military
(-55
o
o
GENERAL
44
NC
NC
1 DESCRIPTION
Military
(-55
35
A18
A1
2XT
o o C to +125
o o C)
GENERAL
DESCRIPTION
Military
(-55
C
to
+125
C)
XT
+125 C)
XT
Military (-55 C to
43
NC
NC
2
o
o
34
A17
A2
3IT
Industrial
(-40
The
AS5C512K8
is
a
high
speed
SRAM.
It
offers
o o C to +85
o o C)
42
NCflexibility in
A0
3
Industrial
IT IT
Industrial(-40
(-40CCtoto+85
+85C)
C)
The AS5C512K8
is
a
high
speed
SRAM.
It
offers
flexibility in
33
A16
A3
4
A18 and output
4
high-speed A1
memory
applications, with chip enable41(CE\)
high-speed A2
memory
applications, with chip enable
40 (CE\)
A17 and output
5
32
A15
A4
5
• Package(s)
• Package(s)
enable (OE\)
These features can place
the
39
A16 outputs in
A3 capabilities.
6
Package(s)
enable (OE\)
capabilities.
These features can place
the outputs in
31
OE
CEEC6
• Ceramic
LCC
38
A15
A4
7
Ceramic
LCC EC
High-Z for CE
additional
flexibility
in
system
design.
37
OE
8
30
I/O7
I/O0FEC
7
CeramicFlatpack
LCC
High-Z
for
additional
flexibility
in
system
design.
Ceramic
Ceramic Flatpack
F
Writing
devices is accomplished when write
enable (WE\)
36
I/O7
I/O0to these
9
29
I/O6
I/O1 F8
1
Ceramic
Flatpack
Writing
devices is accomplished when35write
enable (WE\)
I/O6
I/O1to these
10
Plastic
SOJ
(Lead
Free)
DJ DJ
Plastic
SOJ
(Lead
Free)*
and CE\ inputs
are
both
LOW.
Reading
is
accomplished
when WE\
28
GND
VDD
9
34
GND
VCC
11
Plastic
SOJ
(Lead
Free)*
DJ
and
CE\
inputs
are
both
LOW.
Reading
is
accomplished
when WE\
Ceramic
SOJ
(attached
formed
lead)
ECJ
Ceramic
SOJ
(attached
formed
lead)
ECJ
33
12
VCC
GND
remains HIGH and CE\ and OE\ go LOW.
27
VDD
10
GND
Ceramic
SOJ
(attached
formed
lead)
ECJ
32
13 CE\ and OE\ go LOW.
I/O5
I/O2 and
remains
HIGH
Ceramic
SOJ
SOJ
Ceramic SOJ
SOJ
26
11
I/O2
I/O5
As a option,
the device can be supplied offering31 a reduced
power
14
I/O4
I/O3
2
Ceramic
SOJ also
SOJ
As amode,
option,
the device
can designers
be supplied
reducedpower
power
Plastic
(44pin,
400mil)
DGC
25
12
I/O3factory
I/O4
30 astandby
15
A14
WE allowing
* PbTSOPII
finish
available,
contact
standby
system
to offering
meet low
2
29
16
A13
A5 allowing
* Pb finish
also(RoHS
available,
contactWE
factory
standby
mode,
system
designers
to
meet
low
standby
power
Plastic
TSOPII
Compliant)
DGCR
24
13
A14
requirements.
power supply
28
17 device operates from a single +5V
A12
A6 This
23
A13
requirements.
This
device are
operates
from a single 27+5VA11
power supply
18 outputs
A7 and
• 2V data retention/low power A5 14
L
and all inputs
fully TTL-compatible.
3
26
19
A10
A8
22
A6L L15
A12
2Vdata
dataretention/low
retention/lowpower
power
•• 2V
and all
inputs
and
outputsoffers
are fully
TTL-compatible.
The
AS5C512K8DJ
the convenience
and
of the
25 reliability
20
NC
A9
21
16
A7
A11
Notes:
24 reliability
21
NC
NC
The AS5C512K8DJ
offers
the
convenience
and
of the
AS5C512K8
SRAM
and
has
the
cost
advantage
of
a
durable
plastic.
Foravailable,
more products
and 17information
20
A8
A10
23
22
NC
NC
1. Pb finishFor
also more
contact
factory
AS5C512K8
SRAM
and
has
the
cost
advantage
of
a
durable
plastic.
The
AS5C512K8DJ
is
footprint
compatible
with
36
pin
CSOJ
products
and
18
A9 information
please
visit
our
web
site at 19 NC
2. Contact factory for
Copper
Lead
Frame
Products
The
AS5C512K8DJ
is footprint compatible with 36 pin CSOJ
package
of the SMD 5692-95600.
please
visit
our
web site
at
3. Not available
for
parts in
DGC
& DGCR
packages.
www.austinsemiconductor.com
package of the SMD 5692-95600.
www.austinsemiconductor.com
AS5C512K8
AS5C512K8
Rev. 7.5 01/13
Rev. 7.0 05/08
AS5C512K8
Rev. 7.0 05/08
PIN DESCRIPTIONS
A0-A18
Address Inputs
CE
Chip Enable Input
1 1
1
Micross Components reserves the right to change products or specifications without notice.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
SRAM
AS5C512K8
GENERAL DESCRIPTION
standby mode, allowing system designers to meet low standby power
requirements. This device operates from a single +5V power supply
and all inputs and outputs are fully TTL-compatible.
The AS5C512K8DJ offers the convenience and reliability of the
AS5C512K8 SRAM and has the cost advantage of a durable plastic. The AS5C512K8DJ is footprint compatible with 36 pin CSOJ package of the SMD 5692-95600. TSOPII with copper lead frame offers
superior thermal performance. The AS5C512K8 is a high speed SRAM. It offers flexibility in
high-speed memory applications, with chip enable (CE\) and output
enable (OE\) capabilities. These features can place the outputs in
High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write enable (WE\)
and CE\ inputs are both LOW. Reading is accomplished when WE\
remains HIGH and CE\ and OE\ go LOW.
As a option, the device can be supplied offering a reduced power
SRAM
AS5C512K8
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
GND
DQ8
I/O
CONTROLS
4,194,304-BIT
MEMORY ARRAY
ROW DECODER
A0-A18
INPUT BUFFER
VCC
1024 ROWS X
4096 COLUMNS
DQ1
CE\
OE\
COLUMN DECODER
WE\
*POWER
DOWN
*On the low voltage Data Retention option.
PIN FUNCTIONS
TRUTH TABLE
MODE
OE\ CE\ WE\
STANDBY
X
H
X
READ
L
L
H
NOT SELECTED H
L
H
WRITE
X
L
L
I/O
HIGH-Z
Q
HIGH-Z
D
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
X = Don’t Care
AS5C512K8
Rev. 7.5 01/13
A0 - A18
Address Inputs
WE\
Write Enable
CE\
Chip Enable
OE\
Output Enable
I/O0 - I/O7
Data Inputs/Outputs
VCC
Power
VSS
Ground
NC
No Connection
Micross Components reserves the right to change products or specifications without notice.
2
SRAM
AS5C512K8
*Stresses greater than those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
Voltage on Vcc Supply Relative to Vss
Vcc ....................................................................-.5V to +7.0V is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the
Storage Temperature (Plastic)......................-65°C to +150°C
operation section of this specification is not implied. Exposure
Storage Temperature (Ceramic)...................-55°C to +125°C
Short Circuit Output Current (per I/O)…........................20mA to absolute maximum rating conditions for extended periods
Voltage on any Pin Relative to Vss.................-.5V to Vcc+1V may affect reliability.
Maximum Junction Temperature**..............................+150°C ** Junction temperature depends upon package type, cycle time,
Power Dissipation ................................................................1W loading, ambient temperature and airflow, and humidity. ABSOLUTE MAXIMUM RATINGS*
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TA < +125oC & -40oC < TA < +85oC ; Vcc = 5V +10%)
CONDITIONS
DESCRIPTION
WE\=CE\<VIL; Vcc = MAX
f = MAX = 1/tRC
Outputs Open
Power Supply
Current: Operating
"L" Version Only
CE\ > VIH, All other inputs < VIL,
Vcc = MAX, f = 0,
Outputs Open
Power Supply
Current: Standby
"L" Version Only
CE\ > Vcc -0.2V; Vcc = MAX
VIN<Vss +0.2V or
VIN>Vcc -0.2V; f = 0
"L" Version Only
DESCRIPTION
MAX
-12 -15 -17 -20 -25 -35 -45 UNITS NOTES
SYM
ICCSP 100 100 100 90
90
80
70
mA
ICCLP
75
75
75
65
65
60
50
mA
ISBTSP 20
20
20
20
20
20
20
mA
ISBTLP
10
10
10
10
10
10
10
mA
ISBCSP 15
15
15
15
15
15
15
mA
ISBCLP
5
5
5
5
5
5
mA
SYM
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
VIH
2.2
Vcc +0.5
V
1
Input Low (Logic 0) Voltage
VIL
-0.5
0.8
V
1, 2
0V < VIN < Vcc
ILI
-2
2
μA
Output(s) Disabled
0V < VOUT < Vcc
ILO
-2
2
μA
Output High Voltage
IOH = -4.0 mA
VOH
2.4
---
V
1
Output Low Voltage
IOL = 8 mA
VOL
---
0.4
V
1
VCC
4.5
5.5
V
1
Input Leakage Current
Output Leakage Current
CONDITIONS
5
3
Supply Voltage
CAPACITANCE
PARAMETER
Input Capacitance
Output Capactiance
AS5C512K8
Rev. 7.5 01/13
CONDITIONS
SYMBOL
MAX
UNITS
NOTES
TA = 25oC, f = 1MHz
VIN = 0
CI
8
pF
4
Co
10
pF
4
Micross Components reserves the right to change products or specifications without notice.
3
SRAM
AS5C512K8
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55oC < TA < +125oC or -40oC to +85oC; Vcc = 5V +10%)
DESCRIPTION
SYM
-12
-15
-17
-20
-25
-35
-45
UNITS NOTES
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
READ CYCLE
Read Cycle Time
tRC
Address Access Time
tAA
12
15
17
20
25
35
45
Chip Enable Access Time
tACE
12
15
17
20
25
35
45
Output Hold From Address Change
tOH
2
Chip Enable to Output in Low-Z
tLZCE
2
Chip Disable to Output in High-Z
tHZCE
0
12
Output Enable Acess Time
tAOE
Output Enable to Output in Low-Z
tLZOE
0
Output Disable to Output in High-Z
WRITE CYCLE
WRITE Cycle Time
tHZOE
0
15
17
2
2
2
6.5
0
7
0
8
0
0
8
0
0
10
0
0
12
0
0
15
0
20
25
0
15
0
ns
ns
ns
2
15
0
10
ns
2
2
10
0
8
45
2
2
8
0
8
35
2
2
8
0
7
25
2
2
7
0
6.5
20
20
ns
4, 6, 7
ns
4, 6, 7
ns
ns
4, 6, 7
ns
4, 6, 7
tWC
12
15
17
20
25
35
45
ns
Chip Enable to End of Write
tCW
12
15
16
17
20
30
35
ns
Address Valid to End of Write
tAW
12
15
16
17
20
30
35
ns
Address Setup Time
tAS
0
0
0
0
0
0
0
ns
Address Hold From End of Write
tAH
0
0
0
0
0
0
0
ns
WRITE Pulse Width
tWP
12
15
16
17
20
30
35
ns
Data Setup Time
tDS
6.5
7
9
10
12
20
25
ns
Data Hold Time
tDH
0
0
0
0
0
0
0
ns
Write Disable to Output in Low-Z
tLZWE
0
Write Enable to Output in High-Z
tHZWE
0
AS5C512K8
Rev. 7.5 01/13
0
6.5
0
0
7
0
0
8
0
0
8
0
0
10
0
0
15
0
20
ns
4, 6, 7
ns
4, 6, 7
Micross Components reserves the right to change products or specifications without notice.
4
SRAM
SRAM
AS5C512K8
AS5C512K8
Austin Semiconductor, Inc.
AC TEST
ACCONDITIONS
TEST CONDITIONS
Input pulse
levels
...............................................
Vss to 3.0V
Input
pulse
levels ......................................................
Vss to 3.0V
Input riseInput
and fall
..................................................
3ns
risetimes
and fall
times .........................................................
3ns
Input timing
reference
levels ........................................
1.5V
Input
timing reference
levels ...............................................
1.5V
Output reference
levels ..................................................
1.5V
Output reference
levels ........................................................
1.5V
Output load
.................................................
See Figures
1
Output
load .................................................
See Figures
1 and 2
167 ohms
Q
167 ohms
Q
1.73V
C=30pF
1.73V
C=5pF
Fig. 2 Output
Fig. Load
2 Output Load
Fig. 1 Output
Fig. Load
1 Output Load
Equivalent
Equivalent
Equivalent
Equivalent
and 2
NOTES
NOTES1. All voltages referenced to VSS (GND).
1.
2.
3.
4.
5.
6.
7.
8. WE\ 9.
is HIGH
forisREAD
cycle. selected. Chip enables and
Device
continuously
All voltages
to VSS< (GND).
9. Device isoutput
continuously
enables
2. -2Vreferenced
for pulse width
20ns
enablesselected.
are held Chip
in their
activeand
state.
-2V for
< 20nson output loading and cycle rates.
output
arevalid
held in
their
state. with, latest
3. pulse
ICC iswidth
dependent
10.enables
Address
prior
to,active
or coincident
ICC is4.dependent
on outputisloading
and cycle
rates.
10. Address valid
prior chip
to, orenable.
coincident with, latest
This parameter
guaranteed
but not
tested.
occurring
This 5.
parameter
is guaranteed
but not tested.
occurring
chip= enable.
Test conditions
as specified
with the output loading
11. tRC
Read Cycle Time.
Test conditions
as specified
theotherwise
output loading
11. tRC =12.
Read
Cycle
Time.
as shown
in Fig. 1 with
unless
noted. Chip
enable
and write enable can initiate and
t
t
t
t
t
t
as shown
in Fig. 1LZWE,
unless otherwise
noted.HZOE and HZWE12. Chip enable
and write
enablecycle.
can initiate and
6. LZCE,
LZOE, HZCE,
terminate
a WRITE
t
t
t
LZCE, tLZWE,
LZOE,
HZOE and
is
terminate
a WRITE
cycle.
are specified
witht HZCE,
CL = 5pF
as in Fig. 2.tHZWE
Transition
13. Output
enable
(OE\) is inactive (HIGH).
are specified
with CL
= 5pF as
in Fig.
2. Transition
is 13. Output
(OE\)
is inactive
measured
±200mV
from
steady
state voltage.
14.enable
Output
enable
(OE\) is (HIGH).
active (LOW).
measured
±200mV
from
steady stateand
voltage.
(OE\)
active (LOW).
7. At
any given
temperature
voltage condition, 14. Output
15.enable
ASI does
notiswarrant
functionality nor reliability of
t
t voltage condition,
At any given
temperature
and
not product
warrant in
functionality
nor reliability
of
HZCE
is less than
LZCE, and tHZWE is less than 15. ASI does any
which the junction
temperature
t
t
t
HZCE is LZWE.
less than LZCE, and tHZWE is less than any product
in which
the Care
junction
temperature
exceeds
150°C.
should
be taken to limit power to
t
LZWE.
exceeds 150°C.
Carelevels.
should be taken to limit power to
8. WE\ is HIGH for READ cycle.
acceptable
acceptable levels.
DATA RETENTION
ELECTRICAL
CHARACTERISTICS
(L Version
Only) Only)
DATA RETENTION
ELECTRICAL
CHARACTERISTICS
(L Version
DESCRIPTION
DESCRIPTION
CONDITIONS
CONDITIONS
SYM
CE\
> VCC -0.2V
CE\ > VCC
-0.2V
Vcc for Retention
Data
Vcc for Retention
Data
>V
-0.2 or 0.2V
VIN
-0.2
orCC
0.2V
VIN > VCC
Data Retention
Data Retention
Current Current
VDR
Vcc =ICCDR
2.0V
Vcc = 2.0V
Chip Deselect
to Data to Data
Chip Deselect
tCDR
Operation
Recovery
Time
Operation
Recovery
Time
AS5C512K8 AS5C512K8
Rev. 7.5 01/13
Rev. 7.0 05/08
tR
SYM MAX
MINUNITS
MAX NOTES
UNITS
MIN
V
2 DR
2
ICCDR 2
V
NOTES
V
800
mA
uA
t0CDR
0
ns
4ns
10tR
10 ms
4, ms
11
4
4, 11
Micross Components
the rightInc.
to change
without
notice.
Austin reserves
Semiconductor,
reservesproducts
the rightor
tospecifications
change products
or specifications
without notice.
5
5
SRAM
AS5C512K8
LOW VCC DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V
4.5V
VDR>2V
tR
tCDR
VIH-
CE\
VDR
VILREAD CYCLE NO. 18, 9
(Address Controlled, CE\ = OE\ = VIL, WE\ = VIH)
tRC
ADDRESS
VALID
tAA
tOH
I/O, DATA IN
& OUT
Previous Data Valid
Data Valid
READ CYCLE NO. 2 2
(WE\ = VIH)
tRC
ADDRESS
tLZOE
tAOE
tHZOE
CE\
tLZCE
tACE
I/O, DATA IN
& OUT
tHZCE
Data Valid
High-Z
tPU
tPD
Icc
Don’t Care
Undefined
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specifications without notice.
6
SRAM
AS5C512K8
WRITE CYCLE NO. 112
(CE Controlled)
tWC
ADDRESS
tAW
tAS
tAH
tCW
CE\
tWP1
WE\
tDH
tDS
Data Valid
I/O, DATA IN
I/O, DATA OUT
High-Z
High-Z
WRITE CYCLE NO. 212, 13
(Write Enabled Controlled)
tWC
ADDRESS
tAW
tCW
CE\
tAS
tAH
tWP1
WE\
tDH
Data Valid
I/O, DATA IN
I/O, DATA OUT
AS5C512K8
Rev. 7.5 01/13
High-Z
High-Z
Micross Components reserves the right to change products or specifications without notice.
7
SRAM
AS5C512K8
WRITE CYCLE NO. 37,12, 14
(WE Controlled)
tWC
ADDRESS
tAW
CE\
tAS
tAH
tCW
tWP2
WE\
tDH
tDS
Data Valid
DATA IN
tHZWE
DATA OUT
AS5C512K8
Rev. 7.5 01/13
High-Z
Data Undefined
tLZWE
Micross Components reserves the right to change products or specifications without notice.
8
SRAM
AS5C512K8
PACKAGING INFORMATION
Plastic TSOP
Package Code: T (Type II)
MECHANICAL DEFINITIONS
44-Pin TSOPII (Package Designators DGC & DGCR)
N
N/2+1
E1
1
Notes:
1. Controlling dimension: millimieters,
unless otherwise specified.
2. BSC = Basic lead spacing
between centers.
3. Dimensions D and E1 do not
include mold flash protrusions and
should be measured from the
bottom of the package.
4. Formed leads shall be planar with
respect to one another within
0.004 inches at the seating plane.
E
N/2
D
SEATING PLANE
A
ZD
.
b
e
L
A1
α
C
N=44 Leads
Symbol
Millimeters
Plastic TSOP (T - Type II) Inches
Ref. Std.
Min
Max
Min
Max
Millimeters
Inches
Millimeters
Inches
Millimeters
Inches
A Max ‐ Min 1.20
0.047
Symbol Min Max
Min
Max
Min ‐ Max
Min Max
Min Max
A1
0.05
0.15
0.002
0.006
Ref. Std.
No. Leads (N)
32
50
b
0.30
0.4544
0.012
0.018
A
—
1.20
—C
0.047 0.12 —
1.20
—
0.047
—
1.20
—
0.047
0.21
0.005
0.008
A1
0.05 0.15
0.002
0.00618.31 0.05 18.52
0.15
0.002
0.006 0.729
0.05 0.15
0.002 0.006
D
0.721
b
0.30 0.52
0.012 0.020
0.30 0.45
0.012 0.018
0.30 0.45
0.012 0.018
E1
10.03
10.29
0.395
0.405
C
0.12 0.21
0.005 0.008
0.12 0.21
0.005 0.008
0.12 0.21
0.005 0.008
E 11.56
11.96
0.455
0.471
D
20.82 21.08
0.820 0.830
18.31 18.52
0.721 0.729
20.82 21.08
0.820 0.830
e 0.400
0.80 BSC
E1
10.03 10.29
0.391
10.03 10.29
0.395 0.032 BSC
0.405
10.03 10.29
0.395 0.405
L
0.016
E
11.56 11.96
0.451
0.466 0.41 11.56 0.60
11.96
0.455
0.471 0.024
11.56 11.96
0.455 0.471
ZD BSC
0.032 REF 0.80 BSC
0.81 REF
e
1.27 BSC
0.050
0.80 BSC
0.032 BSC
0.031 BSC
o
o
o 0.024
o0.40
L
0.40 0.60
0.016
0.024
0.41
0.60
0.016
0.60
0.016
0.024
0
5
0
5
α
ZD
α
AS5C512K8
Rev. 7.5 01/13
0.95 REF
0°
5°
0.037 REF
0°
5°
0.81 REF
0°
5°
0.032 REF
0°
5°
0.88 REF
0°
5°
0.035 REF
0°
5°
Micross Components reserves the right to change products or specifications without notice.
9
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
SRAM
AS5C512K8
SRAM
Austin
Semiconductor,
Inc.
MECHANICAL
DEFINITIONS*
Pin 1 identifier area
AS5C512K8
Micross
Case #210 (Package
Designator EC)
MECHANICAL
DEFINITIONS*
SMD 5962-95600, Case Outline N
ASI Case #210 (Package Designator EC)
SMD 5962-95600, Case Outline N
P
A
P
R
Pin 1 identifier area
L2
A
R
1
L2
D
1
36
L
D
e
36
B
D1
L
e
B
D1
E
A1
E
A1
SYMBOL
A
A1
B
D
D1
E
e
L
L2
P
R
SMD SPECIFICATIONS
MIN
MAX
0.080
0.100
0.054
0.066
0.022
0.028
0.910
0.930
0.840
0.860
0.445
0.460
0.050 BSC
0.100 TYP
0.115
0.135
--0.006
0.009 TYP
*All measurements are in inches.
AS5C512K8
Rev. 7.5 01/13
*All measurements are in inches.
AS5C512K8
Rev. 7.0 05/08
Micross Components reserves the right to change products or specifications without notice.
10
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
SRAM
AS5C512K8
AS5C512K8
Austin Semiconductor, Inc.
MECHANICAL
MECHANICALDEFINITIONS*
DEFINITIONS*
ASI Case
#307
(Package
Designator
F) F)
Micross
Case
#307
(Package
Designator
SMD
SMD5962-95600,
5962-95600,Case
CaseOutline
OutlineTT
L
L
E
E
Pin 1 identifier area
Pin 1 identifier area
36
e
b
D1
1
36
1
e
D
b
D
D1
Bottom
View
Bottom
View
S
S
Top
View
Top
View
c
A
c
E2
SYMBOL
A
b
c
D
D1
E
E2
e
L
Q
E2
A
Q
SMD SPECIFICATIONS
MIN
MAX
0.096
0.125
0.015
0.022
0.003
0.009
0.910
0.930
0.840
0.860
0.505
0.515
0.385
0.397
0.050 BSC
0.250
0.370
0.020
0.045
*All measurements are in inches.
*All measurements are in inches.
AS5C512K8
AS5C512K8
Rev.
7.0 05/08
Rev. 7.5 01/13
Q
10
11
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Micross Components reserves the right to change products or specifications without notice.
SRAM
AS5C512K8
MECHANICAL DEFINITIONS*
Micross Case Package Designator: SOJ
SMD 5962-95600, Case Outline M
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specifications without notice.
12
SRAM
SRAM
Austin Semiconductor, Inc.
AS5C512K8
AS5C512K8
MECHANICAL
MECHANICALDEFINITIONS*
DEFINITIONS*
ASI Case
#503
(Package
Designator
ECJ)
Micross
Case
#503
(Package
Designator
ECJ)
SMD
SMD5962-95600,
5962-95600,Case
CaseOutline
OutlineMM
P P
A A
L L
TYP
TYP
L2 L2
1 1
3 636
e e
D D
D1D1
A2 A2
E2 E2
b b
A1A1
E E
SYMBOL
A
A1
A2
b
D
D1
E
E2
e
L
L2
P
SMD SPECIFICATIONS
MIN
MAX
0.140
0.160
0.054
0.075
0.025
0.063
0.019
0.028
0.910
0.939
0.840
0.860
0.434
0.460
0.374
0.410
0.050 BSC
0.050
0.070
0.115
0.135
--0.004
*All
measurements
*All
measurementsare
areinininches.
inches.
AS5C512K8
AS5C512K8
Rev.
7.07.5
05/08
Rev.
01/13
1213
Austin
Semiconductor,
Inc.reserves
reservesthe
theright
righttotochange
changeproducts
productsororspecifications
specificationswithout
without notice.
notice.
Micross
Components
SRAM
AS5C512K8
SRAM
Austin Semiconductor, Inc.
AS5C512K8
MECHANICAL DEFINITIONS*
MECHANICAL
DEFINITIONS*
Micross
Case #903 (Package
Designator DJ)
ASI Case #903 (Package Designator DJ)
*All measurements are in inches.
AS5C512K8
Rev. 7.5 01/13
*All measurements are in inches.
AS5C512K8
Rev. 7.0 05/08
Micross Components reserves the right to change products or specifications without notice.
14
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
SRAM
AS5C512K8
ORDERING INFORMATION
36-Pin Ceramic Flat Pack
EXAMPLE: AS5C512K8F-25/XT
Package
Speed
Device Number
Type
ns
AS5C512K8
F
-12
AS5C512K8
F
-15
AS5C512K8
F
-17
AS5C512K8
F
-20
AS5C512K8
F
-25
AS5C512K8
F
-30
AS5C512K8
F
-45
36-Pin CLCC
EXAMPLE: AS5C512K8EC-35/XT
Package
Speed
Device Number
Type
ns
AS5C512K8
EC
-12
AS5C512K8
EC
-15
AS5C512K8
EC
-17
AS5C512K8
EC
-20
AS5C512K8
EC
-25
AS5C512K8
EC
-30
AS5C512K8
EC
-45
44-Pin TSOPII - Sn/Pb Lead Finish
EXAMPLE: AS5C512K8DGC-12/XT
Speed
Package
Device Number
ns
Type
AS5C512K8
DGC
-12
AS5C512K8
DGC
-15
Options**
Process
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
Options**
Process
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
36-Pin Ceramic SOJ Package
EXAMPLE: AS5C512K8ECJ-15/IT
Package
Speed
Options** Process
Device Number
Type
ns
AS5C512K8
SOJ [ECJ]
-12
L
/*
AS5C512K8
SOJ [ECJ]
-15
L
/*
AS5C512K8
SOJ [ECJ]
-17
L
/*
AS5C512K8
SOJ [ECJ]
-20
L
/*
AS5C512K8
SOJ [ECJ]
-25
L
/*
AS5C512K8
SOJ [ECJ]
-30
L
/*
AS5C512K8
SOJ [ECJ]
-45
L
/*
*Consult Factory for ECJ package option, SOJ is new standard.
36-Pin Plastic SOJ
EXAMPLE: AS5C512K8DJ-20/XT
Package
Speed
Options** Process
Device Number
Type
ns
+
AS5C512K8
-12
L
/*
DJ
AS5C512K8
-15
L
/*
DJ+
AS5C512K8
-17
L
/*
DJ+
AS5C512K8
-20
L
/*
DJ+
AS5C512K8
-25
L
/*
DJ+
AS5C512K8
-30
L
/*
DJ+
AS5C512K8
-45
L
/*
DJ+
+Lead Free (Pb finish is also available, consult factory)
44-Pin TSOPII - RoHS Compliant - NiPdAu Lead Finish
EXAMPLE: AS5C512K8DGCR-12/IT
Package
Speed
Device Number
Process
Type
ns
AS5C512K8
DGCR
-12
/*
AS5C512K8
DGCR
-15
/*
Process
/*
/*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
**OPTIONS DEFINTIONS
L = 2V Data Retention / Low Power (Consult Factory)
** L Version is not currently an available option for parts in DGC & DGCR package.
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specifications without notice.
15
SRAM
AS5C512K8
MICROSS TO DSCC PART NUMBER
CROSS REFERENCE
FOR SMD 5962-95600*
Micross Package Designator EC
Micross Package Designator ECJ
Micross Part #
AS5C512K8EC-12L
AS5C512K8EC-12L
AS5C512K8EC-15
AS5C512K8EC-15L
AS5C512K8EC-20L
AS5C512K8EC-25L
AS5C512K8EC-35L
AS5C512K8EC-45L
SMD Part #
5962-9560015QNA
5962-9560016QNA
5962-9560014QNA
5962-9560013QNA
5962-9560012QNA
5962-9560011QNA
5962-9560010QNA
5962-9560009QNA
Micross Part #
AS5C512K8ECJ-12L
AS5C512K8ECJ-12L
AS5C512K8ECJ-15
AS5C512K8ECJ-15L
AS5C512K8ECJ-20L
AS5C512K8ECJ-25L
AS5C512K8ECJ-35L
AS5C512K8ECJ-45L
SMD Part #
5962-9560015QMA
5962-9560016QMA
5962-9560014QMA
5962-9560013QMA
5962-9560012QMA
5962-9560011QMA
5962-9560010QMA
5962-9560009QMA
AS5C512K8EC-20
AS5C512K8EC-20L
AS5C512K8EC-25
AS5C512K8EC-25L
AS5C512K8EC-35
AS5C512K8EC-35L
AS5C512K8EC-45
AS5C512K8EC-45L
5962-9560004MNA
5962-9560008MNA
5962-9560003MNA
5962-9560007MNA
5962-9560002MNA
5962-9560006MNA
5962-9560001MNA
5962-9560005MNA
AS5C512K8ECJ-20
AS5C512K8ECJ-20L
AS5C512K8ECJ-25
AS5C512K8ECJ-25L
AS5C512K8ECJ-35
AS5C512K8ECJ-35L
AS5C512K8ECJ-45
AS5C512K8ECJ-45L
5962-9560004MMA
5962-9560008MMA
5962-9560003MMA
5962-9560007MMA
5962-9560002MMA
5962-9560006MMA
5962-9560001MMA
5962-9560005MMA
Micross Package Designator F
Micross Part #
AS5C512K8F-12L
AS5C512K8F-12L
AS5C512K8F-15
AS5C512K8F-15L
AS5C512K8F-20L
AS5C512K8F-25L
AS5C512K8F-35L
AS5C512K8F-45L
SMD Part #
5962-9560015QTA
5962-9560016QTA
5962-9560014QTA
5962-9560013QTA
5962-9560012QTA
5962-9560011QTA
5962-9560010QTA
5962-9560009QTA
AS5C512K8F-20
AS5C512K8F-20L
AS5C512K8F-25
AS5C512K8F-25L
AS5C512K8F-35
AS5C512K8F-35L
AS5C512K8F-45
AS5C512K8F-45L
5962-9560004MTA
5962-9560008MTA
5962-9560003MTA
5962-9560007MTA
5962-9560002MTA
5962-9560006MTA
5962-9560001MTA
5962-9560005MTA
* Micross part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specifications without notice.
16
SRAM
AS5C512K8
MICROSS TO DSCC PART NUMBER CROSS REFERENCE
FOR SMD 5962-95613*
Micross Package Designator EC
Micross Package Designator ECJ
Micross Part #
AS5C512K8EC-12/H
AS5C512K8EC-12L/H
AS5C512K8EC-15/H
AS5C512K8EC-17/H
AS5C512K8EC-17L/H
AS5C512K8EC-20/H
AS5C512K8EC-20L/H
AS5C512K8EC-25/H
AS5C512K8EC-25/H
AS5C512K8EC-25L/H
AS5C512K8EC-25L/H
AS5C512K8EC-35/H
AS5C512K8EC-35/H
AS5C512K8EC-35L/H
AS5C512K8EC-35L/H
AS5C512K8EC-45/H
AS5C512K8EC-45/H
AS5C512K8EC-45L/H
AS5C512K8EC-45L/H
AS5C512K8EC-55/H
AS5C512K8EC-55L/H
SMD Part #
5962-9561329HNA
5962-9561328HNA
5962-9561314HNA
5962-9561310HNA
5962-9561324HNA
5962-9561309HNA
5962-9561323HNA
5962-9561308HNA
5962-9561313HNA
5962-9561322HNA
5962-9561327HNA
5962-9561307HNA
5962-9561312HNA
5962-9561321HNA
5962-9561326HNA
5962-9561306HNA
5962-9561311HNA
5962-9561320HNA
5962-9561325HNA
5962-9561305HNA
5962-9561319HNA
Micross Part #
AS5C512K8ECJ-12/H
AS5C512K8ECJ-12L/H
AS5C512K8ECJ-15/H
AS5C512K8ECJ-17/H
AS5C512K8ECJ-17L/H
AS5C512K8ECJ-20/H
AS5C512K8ECJ-20L/H
AS5C512K8ECJ-25/H
AS5C512K8ECJ-25/H
AS5C512K8ECJ-25L/H
AS5C512K8ECJ-25L/H
AS5C512K8ECJ-35/H
AS5C512K8ECJ-35/H
AS5C512K8ECJ-35L/H
AS5C512K8ECJ-35L/H
AS5C512K8ECJ-45/H
AS5C512K8ECJ-45/H
AS5C512K8ECJ-45L/H
AS5C512K8ECJ-45L/H
AS5C512K8ECJ-55/H
AS5C512K8ECJ-55L/H
SMD Part #
5962-9561329HZA
5962-9561328HZA
5962-9561314HZA
5962-9561310HZA
5962-9561324HZA
5962-9561309HZA
5962-9561323HZA
5962-9561308HZA
5962-9561313HZA
5962-9561322HZA
5962-9561327HZA
5962-9561307HZA
5962-9561312HZA
5962-9561321HZA
5962-9561326HZA
5962-9561306HZA
5962-9561311HZA
5962-9561320HZA
5962-9561325HZA
5962-9561305HZA
5962-9561319HZA
AS5C512K8EC-12/H
AS5C512K8EC-12L/H
AS5C512K8EC-15/H
AS5C512K8EC-17/H
AS5C512K8EC-17L/H
AS5C512K8EC-20/H
AS5C512K8EC-20L/H
AS5C512K8EC-25/H
AS5C512K8EC-25/H
AS5C512K8EC-25L/H
AS5C512K8EC-25L/H
AS5C512K8EC-35/H
AS5C512K8EC-35/H
AS5C512K8EC-35L/H
AS5C512K8EC-35L/H
AS5C512K8EC-45/H
AS5C512K8EC-45/H
AS5C512K8EC-45L/H
AS5C512K8EC-45L/H
AS5C512K8EC-55/H
AS5C512K8EC-55L/H
5962-9561329HNC
5962-9561328HNC
5962-9561314HNC
5962-9561310HNC
5962-9561324HNC
5962-9561309HNC
5962-9561323HNC
5962-9561308HNC
5962-9561313HNC
5962-9561322HNC
5962-9561327HNC
5962-9561307HNC
5962-9561312HNC
5962-9561321HNC
5962-9561326HNC
5962-9561306HNC
5962-9561311HNC
5962-9561320HNC
5962-9561325HNC
5962-9561305HNC
5962-9561319HNC
AS5C512K8ECJ-12/H
AS5C512K8ECJ-12L/H
AS5C512K8ECJ-15/H
AS5C512K8ECJ-17/H
AS5C512K8ECJ-17L/H
AS5C512K8ECJ-20/H
AS5C512K8ECJ-20L/H
AS5C512K8ECJ-25/H
AS5C512K8ECJ-25/H
AS5C512K8ECJ-25L/H
AS5C512K8ECJ-25L/H
AS5C512K8ECJ-35/H
AS5C512K8ECJ-35/H
AS5C512K8ECJ-35L/H
AS5C512K8ECJ-35L/H
AS5C512K8ECJ-45/H
AS5C512K8ECJ-45/H
AS5C512K8ECJ-45L/H
AS5C512K8ECJ-45L/H
AS5C512K8ECJ-55/H
AS5C512K8ECJ-55L/H
5962-9561329HZC
5962-9561328HZC
5962-9561314HZC
5962-9561310HZC
5962-9561324HZC
5962-9561309HZC
5962-9561323HZC
5962-9561308HZC
5962-9561313HZC
5962-9561322HZC
5962-9561327HZC
5962-9561307HZC
5962-9561312HZC
5962-9561321HZC
5962-9561326HZC
5962-9561306HZC
5962-9561311HZC
5962-9561320HZC
5962-9561325HZC
5962-9561305HZC
5962-9561319HZC
* Micross part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specifications without notice.
17
SRAM
AS5C512K8
MICROSS TO DSCC PART NUMBER CROSS REFERENCE
FOR SMD 5962-95613*
Micross Package Designator F
Micross Part #
AS5C512K8F-12/H
AS5C512K8F-12L/H
AS5C512K8F-15/H
AS5C512K8F-17/H
AS5C512K8F-17L/H
AS5C512K8F-20/H
AS5C512K8F-20L/H
AS5C512K8F-25/H
AS5C512K8F-25/H
AS5C512K8F-25L/H
AS5C512K8F-25L/H
AS5C512K8F-35/H
AS5C512K8F-35/H
AS5C512K8F-35L/H
AS5C512K8F-35L/H
AS5C512K8F-45/H
AS5C512K8F-45/H
AS5C512K8F-55/H
AS5C512K8F-55L/H
AS5C512K8F-45L/H
AS5C512K8F-45L/H
SMD Part #
5962-9561329HUA
5962-9561328HUA
5962-9561314HUA
5962-9561310HUA
5962-9561324HUA
5962-9561309HUA
5962-9561323HUA
5962-9561308HUA
5962-9561313HUA
5962-9561322HUA
5962-9561327HUA
5962-9561307HUA
5962-9561312HUA
5962-9561321HUA
5962-9561326HUA
5962-9561306HUA
5962-9561311HUA
5962-9561305HUA
5962-9561319HUA
5962-9561320HUA
5962-9561325HUA
AS5C512K8F-12/H
AS5C512K8F-12L/H
AS5C512K8F-15/H
AS5C512K8F-17/H
AS5C512K8F-17L/H
AS5C512K8F-20/H
AS5C512K8F-20L/H
AS5C512K8F-25/H
AS5C512K8F-25/H
AS5C512K8F-25L/H
AS5C512K8F-25L/H
AS5C512K8F-35/H
AS5C512K8F-35/H
AS5C512K8F-35L/H
AS5C512K8F-35L/H
AS5C512K8F-45/H
AS5C512K8F-45/H
AS5C512K8F-55/H
AS5C512K8F-55L/H
AS5C512K8F-45L/H
AS5C512K8F-45L/H
5962-9561329HUC
5962-9561328HUC
5962-9561314HUC
5962-9561310HUC
5962-9561324HUC
5962-9561309HUC
5962-9561323HUC
5962-9561308HUC
5962-9561313HUC
5962-9561322HUC
5962-9561327HUC
5962-9561307HUC
5962-9561312HUC
5962-9561321HUC
5962-9561326HUC
5962-9561306HUC
5962-9561311HUC
5962-9561305HUC
5962-9561319HUC
5962-9561320HUC
5962-9561325HUC
* Micross part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specifications without notice.
18
SRAM
AS5C512K8
DOCUMENT TITLE
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
REVISION HISTORY
Rev #
7.1
HistoryRelease Date
Updated 36 lead SOJ Drawing
September 2008
Status
Release
7.2
Added Micross Information
Release
January 2010
7.3
Expanded package offering to include March 2011
Copper Lead Frames and RoHS
compliancy, pages 1&14,
changed elect. char. limits:
From: To:
ICCSP 225mA for all speeds
100mA for -12,-15 & -17
90mA for -20 & -25
80mA for -35
70mA for -45
ICCLP 180mA for all speeds
75mA for -12,-15 & -17
65mA for -20 & -25
60mA for -35
50mA for -45
ISBTSP 60mA for all speeds
20mA for all speeds
ISBTLP 30mA for all speeds
10mA for all speeds
ISBCSP 25mA for all speeds
15mA for all speeds
ISBCLP 10mA for all speeds
5mA for all speeds
ILI
±10µA±2µA
CI
12pF8pF
CO
14pF10pF
tAH
1ns for all speeds
0ns for all speeds
tHZWE 25ns -35 & 30ns -45
15ns -35 & 20ns -45
Release
7.4
Updated Data Retention Electrical
Characteristics (L Version Only)
ICCDR max. from 800 uA to 4.5 mA
Release
August 2012
7.5
Updated Data Retention Electrical
January 2013
Release
Characteristics (L Version Only)
ICCDR max. from 4.5mA to 2mA AS5C512K8
Rev. 7.5 01/13
Micross Components reserves the right to change products or specifications without notice.
19