FDP047N10 N-Channel Power Trench Mosfet Chip 100V, 164A, 4.7mΩ1 Part V(BR)DSS FDP047N10 100V IDn RDS(on) Max 164A 4.7mΩ Die Size 1 6.4 x 5.3 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • High density AC / DC Converters • High Power & Current Handling Capability • Motor drives & Micro Inverters • Low RDS (on) per mm2 • Low Gate Charge, Fast Switching Maximum Ratings Symbol Parameter Ratings Units VDSS Drain to Source Voltage 100 V Gate to Source Voltage ±20 V VGSS 2 ID Drain Current 3 IDM Drain Current TJ, TSTG Continuous (TC = 25°C) 164 Continuous (TC = 100°C) 116 Pulsed 656 Operation Junction & Storage Temperature EAS Single Pulsed Avalanche 4 Energy dv/dt Peak Diode Recovery dv/dt 4 A -55 to 175 °C L = 0.41mH, IAS = 75A, VDD= 50V, RG=25Ω Starting TJ =25°C 1153 mJ ISD≤75A,di/dt≤200A/µs, VDD≤BVDSS, Start @ TJ=25°C 6 V/ns Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 100 - - V VGS(th) Gate threshold Voltage VGS = VDS, ID =250µA 2.5 3.5 4.5 V IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V - - 1 µA Zero Gate Voltage Drain Current @ 150°C VDS = 100V, VGS = 0V - - 500 IGSS Gate to Body Leakage Current VGS = ±20V , VDS = 0V - - ±100 nA RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 75A - 3.9 4.7 mΩ 1. 2. 3. 1 Notes: Defined by chip design, not subject to 100% production test at wafer level Performance will vary based on assembly technique and substrate choice Repetitive Rating: Pulse width limited by maximum junction temperature Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 Static Characteristics, TJ = 25° unless otherwise noted Dynamic Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min VDS = 10V, ID = 75A - 170 - S - 11500 15265 pF - 1120 1500 pF - 455 680 pF - 160 210 nC - 56 - nC - 36 - nC gFS Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS =25V, VGS = 0V f = 1MHz VDS =80V, ID = 75A 5 VGS = 10V Typ Max Units Switching Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Test Conditions VDD = 50V, ID = 75A VGS = 10V RGEN = 25Ω5 Min Typ Max Units - 174 358 ns - 386 782 ns - 344 698 ns - 244 299 ns Drain-Source Diode Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units IS Maximum Continuous Drain to Source Diode Forward Current - - 164 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 656 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.25 V trr Reverse Recovery Time - 88 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 75A dIF/dt = 100A/μs - 245 - nC 4. 5. Notes: Characterised by design & tested at component level, not subject to production test at wafer level Essentially independent of Operating Temperature Typical Characteristics Ordering Guide Part Number Format Detail / Drawing FDP047N10MW Un-sawn wafer, electrical rejects inked Page 3 FDP047N10MWF Sawn wafer on film-frame Page 4 FDP047N10MD Singulated die / chips in waffle pack Page 4 Page2 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Die Drawing Mechanical Data Parameter Units Chip Dimensions Un-sawn 6409 x 5310 µm Chip Thickness (Nominal) 200 µm Gate Pad Size 340 x 461 µm Wafer Diameter 200 (subject to change) mm Saw Street 80 (subject to change) µm Wafer orientation on frame Wafer notch parallel with frame flat Topside Metallisation & Thickness Al / Cu +TiW+Ti 4 µm Backside Metallisation & Thickness Ti+Ni / V+Ag 0.75 µm Topside Passivation Unpassivated Recommended Die Attach Material Soft Solder or Conductive Epoxy Al 125µm X1 Al 500µm X3 double stitch Page3 Recommended Wire Bond - Gate Recommended Wire Bond – Source Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 5.94mm ±0.13mm pocket size Y = 8.23mm ±0.13mm pocket size Z = 0.51mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 6 X 4 (24) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page4 1. Life support devices or systems are devices or systems which,