FGA15N120AN NPT Trench IGBT Chip 1200V, 15A, VCE(sat) = 1.9V Part VCES ICn VCE (sat) Typ Die Size FGA15N120AN 1200V 15A 1.9 5.3 x 5.5 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • Low / Medium Power Modules • Low Saturation Voltage • Welding & Drive Applications • Low Eoff 0.3mJ • Positive Temp Co-efficient for paralleling Maximum Ratings Symbol Parameter Ratings Units VCES Collector to Emitter Voltage 1200 V Gate to Emitter Voltage ±20 V Continuous (TC = 25°C) 30 A Continuous (TC = 100°C) 15 A VGES IC 1 Drain Current ICM Pulsed Collector Current 45 A TJ, TSTG Operation Junction & Storage Temperature -55 to 150 °C Static Characteristics, TJ = 25° unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 1200 - - V ICES Collector Cut-Off Current VCE = VCES , VGE = 0V - - 3 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA Symbol Parameter Test Conditions Min Typ Max Units VGE(th) G-E Threshold Voltage IC = 15mA, VCE = VGE 4.5 6.5 8.5 V IC = 15A, VGE = 15V - 1.9 2.4 V VCE(sat) Collector to Emitter Saturation Voltage IC = 15A, VGE = 15V @ 125°C - 2.2 - V Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 On Characteristics, TJ = 25°C unless otherwise noted Dynamic Characteristics2, TJ = 25°C unless otherwise noted Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 30V, VGE = 0V f = 1MHz VCE = 600V, IC = 15A VGE = 15V Min Typ Max Units - 2650 - - 143 - - 96 - - 120 180 - 16 22 - 23 65 Min Typ Max - 15 - ns - 20 - ns - 160 - ns - 100 - ns pF nC Switching Characteristics3, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions td(on) Turn-On Delay Time tr Rise Time td (off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss - 3 4.5 mJ Eoff Turn-Off Switching Loss - 0.6 0.9 mJ Ets Total Switching Loss - 3.6 5.4 mJ td (on) Turn-On Delay Time - 15 - ns - 20 - ns - 170 - ns - 150 - ns VCC = 600V, IC = 15A RG = 10Ω, VGE = 15V Resistive Load, TC = 25°C Units tr Rise Time td (off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss - 3.2 4.8 mJ Eoff Turn-Off Switching Loss - 0.8 1.2 mJ Ets Total Switching Loss - 4.0 6.0 mJ VCC = 600V, IC = 15A RG = 10Ω, VGE = 15V Resistive Load, TC = 125°C Notes: 1. Performance will vary based on assembly technique and substrate choice 2. Defined by chip design, not subject to 100% production test at wafer level 3. Specified in discrete package for indicative purposes only, bare die performance will vary depending on module design. 4. Ordering Guide Part Number Format Detail / Drawing FGA15N120ANMW FGA15N120ANMF FGA15N120ANMD Un-sawn wafer, electrical rejects inked Page 3 Sawn wafer on film-frame Page 4 Singulated die / chips in waffle pack Page 4 Page2 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Die Drawing – Dimensions (µm) 5257 EMITTER 3098 GATE 762 5537 660 3912 Chip backside is COLLECTOR Mechanical Data Parameter Units Chip Dimensions Un-sawn 5257 x 5537 µm Chip Thickness (Nominal) 280 µm Gate Pad Size 660 x 762 µm Wafer Diameter 150 (subject to change) mm 80 (subject to change) µm Saw Street Wafer notch parallel with frame flat Topside Metallisation & Thickness Al Backside Metallisation & Thickness V/Ni/Ag 4 µm 0.35 µm Topside Passivation Silicon Nitride Recommended Die Attach Material Soft Solder or Conductive Epoxy Recommended Wire Bond - Gate Al 150µm X1 Recommended Wire Bond – Source Al 380µm X2 Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page3 Wafer orientation on frame Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 5.82mm ±0.13mm pocket size Y = 5.82mm ±0.13mm pocket size Z = 0.81mm ±0.05mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 6 X 6 (36) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page4 1. Life support devices or systems are devices or systems which, Page5 Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components