FGH40T65UP Field Stop Trench IGBT Chip 650V, 40A, VCE(sat) = 1.65V Part VCES ICn VCE (sat) Typ Die Size FGH50T65UP 650V 40A 1.65 3.9 x 3.9 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • Inverter Modules • Short Circuit Ruggedness > 5µs @ 25°C • Welding & Drive Applications • Low Saturation Voltage • Positive Temp Co-efficient for paralleling Maximum Ratings Symbol Parameter Ratings Units VCES Collector to Emitter Voltage 650 V Gate to Emitter Voltage ±20 V Continuous (TC = 25°C) 80 A Continuous (TC = 100°C) 40 A A VGES IC 1 Drain Current ICM Pulsed Collector Current 120 ILM Clamped Inductive Load Current @ TC = 25°C 120 A SCWT Short Circuit Withstand Time @ TC = 25°C 5 us TJ, TSTG Operation Junction & Storage Temperature -55 to 175 °C Static Characteristics, TJ = 25° unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 650 - - V ICES Collector Cut-Off Current VCE = VCES , VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA Symbol Parameter Test Conditions Min Typ Max Units VGE(th) G-E Threshold Voltage IC = 40mA, VCE = VGE 4.0 6.0 7.5 V IC = 40A, VGE = 15V - 1.65 2.3 V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V TC = 175°C - 2.1 - V Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 On Characteristics, TJ = 25°C unless otherwise noted Dynamic Characteristics2, TJ = 25°C unless otherwise noted Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 30V, VGE = 0V f = 1MHz VCE = 400V, IC = 40A VGE = 15V Min Typ Max Units - 2730 - pF - 82 - pF - 48 - pF - 177 - nC - 23 - nC - 100 - nC Min Typ Max - 20 - ns - 26 - ns - 144 - ns - 17 - ns Switching Characteristics3, TJ = 25°C unless otherwise noted Symbol Parameter td(on) Turn-On Delay Time Test Conditions Units tr Rise Time td (off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss - 1.59 - mJ Eoff Turn-Off Switching Loss - 0.58 - mJ Ets Total Switching Loss - 2.17 - mJ td (on) Turn-On Delay Time - 19 - ns - 38 - ns - 153 - ns - 60 - ns tr Rise Time td (off) Turn-Off Delay Time tf Fall Time VCC = 400V, IC = 40A RG = 7Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 400V, IC = 40A RG = 7Ω, VGE = 15V Inductive Load, TC = 175°C Eon Turn-On Switching Loss - 1.84 - mJ Eoff Turn-Off Switching Loss - 0.98 - mJ Ets Total Switching Loss - 2.82 - mJ TSC Short Circuit Withstand Time 5 - - us VGE = 15V, VCC = 400V RG = 10Ω Notes: 1. Performance will vary based on assembly technique and substrate choice 2. Defined by chip design, not subject to 100% production test at wafer level 3. Specified in discrete package for indicative purposes only, bare die performance will vary depending on module design. 4. Part Number Format Detail / Drawing FGH40T65UPMW Un-sawn wafer, electrical rejects inked Page 3 FGH40T65UPMF Sawn wafer on film-frame Page 4 FGH40T65UPMD Singulated die / chips in waffle pack Page 4 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page2 Ordering Guide Die Drawing – Dimensions (µm) Mechanical Data Parameter Units Chip Dimensions Un-sawn 3910 x 3910 µm Chip Thickness (Nominal) 75 µm Gate Pad Size 512 x 706 µm Wafer Diameter 150 (subject to change) mm Saw Street 80 (subject to change) µm Wafer orientation on frame Wafer notch parallel with frame flat Topside Metallisation & Thickness Al 4 µm Backside Metallisation & Thickness V/Ni/Ag 0.35 µm Nitride Recommended Die Attach Material Soft Solder or Conductive Epoxy Recommended Wire Bond - Gate Al 125µm X1 Recommended Wire Bond – Source Al < 500µm Page3 Topside Passivation Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 4.19mm ±0.13mm pocket size Y = 4.19mm ±0.13mm pocket size Z = 0.41mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 7 X 7 (49) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. 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LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page4 1. Life support devices or systems are devices or systems which,