FQA62N25C N-Channel Planar DMOS Mosfet Chip 250V, 62A, 35mΩ1 Chip Part V(BR)DSS IDn RDS(on) FQA62N25C 250V 62A 35mΩ 1 Die Size 9.0 x 7.1 mm Photo 2 See page 2 for ordering part numbers & supply formats TBA Features Applications • High density AC / DC Converters • High Avalanche Energy Strength • Switching PWM stages • Low Gate Charge • Low Crss Maximum Ratings Symbol Parameter Ratings Units VDSS Drain to Source Voltage 250 V Gate to Source Voltage ±30 V VGSS ID Drain Current IDM Drain Current TJ, TSTG 2 3 Continuous (TC = 25°C) 62 Continuous (TC = 100°C) 39 Pulsed 248 Operation Junction & Storage Temperature EAS Single Pulsed Avalanche Energy -55 to 150 °C L= 0.96mH, IAS=62A,VDD =50V, RG=25Ω Starting TJ =25°C 2300 mJ ISD≤62A,di/dt≤300A/µs, VDD≤BVDSS, Start @ TJ=25°C 5.5 V/ns 4 4 dv/dt Peak Diode Recovery dv/dt A Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 250 - - V VGS(th) Gate threshold Voltage VGS = VDS, ID =250µA 2.0 - 4.0 V IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V - - 10 µA IDSS Zero Gate Voltage Drain Current 125°C VDS = 200V, VGS = 0V - - 100 µA IGSSF Gate to Body Leakage Current, Forward VGS = 30V , VDS = 0V - - IGSSR Gate to Body Leakage Current, Reverse VGS = -30V , VDS = 0V 1 RDS(on) Static Drain to Source On Resistance 1. 2. 3. VGS = 10V, ID = 31A - 29 100 nA -100 nA 35 mΩ Notes: Defined by chip design, not subject to 100% production test at wafer level Performance will vary based on assembly technique and substrate choice Repetitive Rating: Pulse width limited by maximum junction temperature Further Information - Contact your Micross sales office or email your enquiry to [email protected] Page1 Static Characteristics, TJ = 25° unless otherwise noted Dynamic Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min VDS = 40V, ID = 31A - 55 - S - 4830 6280 pF - 945 1230 pF - 63.5 83 pF - 100 130 nC - 25.5 - nC - 39 - nC gFS Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS =200V, ID = 62A 5 VGS = 10V Typ Max Units Switching Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Test Conditions VDD = 125V, ID = 62A RG = 25Ω5 Min Typ Max Units - 75 160 ns - 395 800 ns - 245 500 ns - 335 680 ns Units Drain-Source Diode Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max IS Maximum Continuous Drain to Source Diode Forward Current - - 62 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 248 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 62A - - 1.5 V trr Reverse Recovery Time - 340 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 62A dIF/dt = 100A/μs - 4.77 - µC 4. 5. Notes: Characterised by design & tested at component level, not subject to production test at wafer level Essentially independent of Operating Temperature Typical Characteristics Ordering Guide Part Number Format Detail / Drawing FQA62N25CMW Un-sawn wafer, electrical rejects inked Page 3 FQA62N25CMF Sawn wafer on film-frame Page 4 FQA62N25CMD Singulated die / chips in waffle pack Page 4 Page2 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Further Information - Contact your Micross sales office or email your enquiry to [email protected] Die Drawing Mechanical Data Parameter Units Chip Dimensions Un-sawn 9040 x 7140 µm Chip Thickness (Nominal) 300 µm Gate Pad Size 512 x 706 µm Wafer Diameter 150 (subject to change) mm Saw Street 80 (subject to change) µm Wafer orientation on frame Wafer notch parallel with frame flat Topside Metallisation & Thickness Al 4 µm Backside Metallisation & Thickness V/Ni/Ag 0.45 µm Topside Passivation Silicon Nitride Recommended Die Attach Material Soft Solder or Conductive Epoxy Al 150µm X1 Al 380µm X2 Page3 Recommended Wire Bond - Gate Recommended Wire Bond – Source Further Information - Contact your Micross sales office or email your enquiry to [email protected] Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 10.13mm ±0.13mm pocket size Y = 7.59mm ±0.13mm pocket size Z = 0.61mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 4 X 5 (20) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] Page4 1. Life support devices or systems are devices or systems which,