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Pb Free Product
BLM3050K
N-Channel Enhancement Mode Power MOSFET
Description
The BLM3050K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =30V,ID =50A
RDS(ON) < 11mΩ @ VGS=10V
Schematic diagram
RDS(ON) < 16mΩ @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
●
Power switching application
●
Hard switched and high frequency circuits
●
Uninterruptible Power Supply
Marking and pin assignment
100% UIS TESTED!
TO-252-2L top view
Package Marking And Ordering Information
Device Marking
3050K
Device
Device Package
Reel Size
Tape width
Quantity
BLM3050K
TO-252-2L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
Unit
30
V
±20
V
ID
50
A
ID (100℃)
35
A
Pulsed Drain Current
IDM
140
A
Maximum Power Dissipation
PD
60
W
0.4
W/℃
EAS
70
mJ
TJ,TSTG
-55 To 175
℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
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BLM3050K
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
2.5
℃/W
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
30
33
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1
1.6
3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=25A
-
8
11
VGS=5V, ID=20A
-
10
16
VDS=5V,ID=20A
15
-
-
S
-
2000
-
PF
-
280
-
PF
-
160
-
PF
-
10
-
nS
On Characteristics (Note 3)
Forward Transconductance
gFS
mΩ
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=15V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=15V,ID=20A
-
8
-
nS
td(off)
VGS=10V,RGEN=1.8Ω
-
30
-
nS
-
5
-
nS
-
23
-
nC
-
7
-
nC
-
4.5
-
nC
-
0.85
1.2
V
-
-
40
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=25A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=25A
Diode Forward Current (Note 2)
IS
Reverse Recovery Time
trr
TJ = 25°C, IF = 40A
-
22
35
nS
Reverse Recovery Charge
Qrr
di/dt = 100A/μs(Note3)
-
12
20
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃, VDD=15V,VG=10V,L=1mH, Rg=25Ω
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BLM3050K
Test circuit
1）EAS test Circuits
2）Gate charge test Circuit:
3）Switch Time Test Circuit：
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BLM3050K
ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical And Thermal Characteristics (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance Normalized
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
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Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
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Normalized BVdss
C Capacitance (pF)
BLM3050K
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 9
BVDSS vs Junction Temperature
ID- Drain Current (A)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Safe Operation Area
Figure 10
VGS(th) vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Figure 8
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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BLM3050K
TO-252-2L Package Information
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