JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors JC(T BC856S SOT-363 DUAL TRANSISTOR (PNP+PNP) FEATURES Two transistors in one package z Reduces number of components and board space z z No mutual interference between the transistors MRKING MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -80 V VCEO Collector-Emitter Voltage -65 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W RθJA Thermal Resistance from Junction to Ambient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS PNP 5401 (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -65 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -15 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE VCE=-5V,IC=-2mA IC=-10mA, IB=-0.5mA -0.1 V IC=-100mA, IB=-5mA * -0.3 V Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Output Capacitance Current Gain-Bandwidth Product Cobo fT 110 IC=-10mA, IB=-0.5mA 0.7 VCB =-10V, f= 1MHz, IE = 0 VCE =-5V, IC =-10mA, f= 100MHz V 2.5 100 pF MHz *pulse test: PW≤350µS, δ≤2%. www.cj-elec.com 1 D,Mar,2016 A,Jun,2014 Typical Characteristics hFE Static Characteristic -8 COMMON EMITTER Ta=25℃ Ta=100℃ -27uA -6 IC -24uA hFE (mA) -30uA -21uA DC CURRENT GAIN COLLECTOR CURRENT —— IC 1000 -18uA -4 -15uA -12uA -9uA -2 Ta=25℃ 100 -6uA COMMON EMITTER VCE= -5V IB=-3uA -0 -0 -2 -4 -6 COLLECTOR-EMITTER VOLTAGE VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1 —— VCE 10 -0.1 -8 -1 (V) -10 COLLECTOR CURRENT IC VBEsat —— IC -100 (mA) IC -2 -1 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ -0.1 Ta=100℃ Ta=25℃ Ta=100℃ β=20 β=20 -0.01 -0.1 -1 -10 COLLECTOR CURRENT IC IC -0.1 -0.1 -100 (mA) —— VBE fT IC -100 (mA) IC —— (MHz) 500 (mA) Ta=100℃ fT -10 TRANSITION FREQUENCY IC COLLECTOR CURRENT -10 COLLECTOR CURRENT -100 Ta=25℃ -1 COMMON EMITTER VCE=-5V -0.1 -0.0 -1 -0.3 -0.6 -0.9 100 COMMON EMITTER VCE=-5V Ta=25℃ 10 -0.1 -1.2 -1 BASE-EMMITER VOLTAGE VBE (V) Cob/ Cib -10 COLLECTOR CURRENT —— VCB/ VEB PC 250 30 —— IC -100 (mA) Ta f=1MHz IE=0/IC=0 COLLECTOR POWER DISSIPATION PC (mW) 10 C (pF) Ta=25 ℃ Cib CAPACITANCE Cob 1 -0.1 -1 REVERSE VOLTAGE www.cj-elec.com -10 VR 200 150 100 50 0 -20 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) D,Mar,2016 A,Jun,2014 SOT-363 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.100 0.150 2.000 2.200 1.150 1.350 2.150 2.400 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.004 0.006 0.079 0.087 0.045 0.053 0.085 0.094 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-363 Suggested Pad Layout www.cj-elec.com 3 D,Mar,2016 A,Jun,2014 SOT-363 Tape and Reel www.cj-elec.com 4 D,Mar,2016 A,Jun,2014