JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002N46 TRANSISTOR（NPN） TO-92 FEATURE 3ower 6witching $pplications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 00 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature 0.8 W 156 ℃/W 150 ℃ -55~150 ℃ RθJA TJ Tstg Storage Temperature 3. BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 00 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA,IC=0 6 V ICBO VCB= 600V,IE=0 100 µA ICEO VCE= 500V,IB=0 100 µA IEBO VEB= 6 V, IC=0 100 µA hFE1 VCE= 10 V, IC=200mA 9 hFE2 VCE= 10 V, IC=0.25mA 5 Collector cut-off current Emitter cut-off current 40 Dccurrentgain Collector-emitter saturation voltage VCE(sat) IC=200mA, IB=40mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=200mA, IB=40mA 1.1 V Transition frequency fT Fall time tf Storage time ts VCE=10V, IC=100mA f =1MHz 5 MHz IC=1A,IB1=-IB2=0.2A 0.5 µs VCC=100V 2.5 µs CLASSIFICATION OF hFE1 Range www.cj-elec.com 9-15 15-20 20-25 1 25-30 30-35 35-40 B,Dec,2015 Typical Characteristics Static Characteristic 350 COMMON EMITTER Ta=25℃ hFE 250 10.5mA DC CURRENT GAIN COLLECTOR CURRENT VCE= 10V 15mA 13.5mA 12mA IC (mA) 300 hFE —— IC 50 9mA 200 7.5mA 150 6mA 4.5mA 100 40 o Ta=100 C 30 20 o Ta=25 C 10 3mA 50 IB=1.5mA 0 0 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE VCE 14 16 1 VBEsat —— IC 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat —— 1000 β=5 800 10 COLLECTOR CURRENT (V) Ta=25℃ 600 Ta=100℃ 400 200 100 IC 800 (mA) IC β=5 800 600 400 Ta=100℃ 200 Ta=25℃ 0 0.1 1 10 800 100 COLLECTOR CURRENT VBE —— IC 0 0.1 (mA) 1 10 100 COLLECTOR CURRENT IC 1000 800 Cob / Cib —— IC VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) C 600 CAPACITANCE COLLECTOR CURRENT IC (mA) VCE=10V 400 o Ta=100 C Ta=25℃ Cib 100 10 Cob 200 0 200 400 600 800 BASE-EMITTER VOLTAGE Pc 1000 COLLECTOR POWER DISSIPATION Pc (mW) 700 (mA) —— 1 0.1 1000 1 REVERSE VOLTAGE VBE(mV) 10 V 20 (V) Ta 800 600 400 200 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 B,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 B,Dec,2015 TO-92 7DSHDQG5HHO www.cj-elec.com 4 B,Dec,2015