JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551K TO – 92 TRANSISTOR (NPN) 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V 0.6 A Collector Current IC Collector Power Dissipation 625 mW Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ PC RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Test V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO conditions Min Typ Max Unit IC=100µA,IE=0 180 V IC=1mA,IB=0 160 V IE=10µA,IC=0 6 V Collector cut-off current ICBO VCB=120V,IE=0 50 nA Emitter cut-off current IEBO VEB=4V,IC=0 50 nA hFE(1) VCE=5V, IC=1mA 80 hFE(2) VCE=5V, IC=10mA 80 hFE(3) VCE=5V, IC=50mA 50 VCE(sat)（1） IC=10mA,IB=1mA 0.15 V VCE(sat)（2） IC=50mA,IB=5mA 0.2 V VBE (sat)（1） IC=10mA,IB=1mA 1 V VBE (sat)（2） IC=50mA,IB=5mA 1 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 6 pF Emitter input capacitance Cib VBE=0.5V,IC=0, f=1MHz 20 pF Transition frequency fT VCE=10V,IC=10mA, f=100MHz 300 MHz 100 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(2) RANK RANGE www.cj-elec.com 80-100 A B C 100-150 150-200 200-300 1 ','HF,201 Typical Characteristics hFE Static Characteristic 50 1000 COMMON EMITTER Ta=25℃ 300uA 270uA (mA) 40 hFE IC 210uA DC CURRENT GAIN COLLECTOR CURRENT Ta=100℃ 240uA 30 180uA 150uA 20 IC —— 120uA 90uA 10 Ta=25℃ 100 60uA COMMON EMITTER VCE=5V IB=30uA 0 10 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 10 (V) IC VBEsat 2 IC —— (mA) IC 1 100 Ta=100℃ Ta=25℃ 1 10 100 COLLECTOR CURRENT IC IC Ta=100℃ 0.1 200 1 10 (mA) 100 COLLECTOR CURRENT —— VBE 200 Ta=25℃ β=10 β=10 10 Cob/ Cib 100 IC —— VCB/ VEB f=1MHz IE=0/ IC=0 (pF) (mA) IC CAPACITANCE T =2 5℃ a C 10 T =1 00℃ a COLLECTOR CURRENT Ta=25℃ Cib 1 10 Cob COMMON EMITTER VCE=5V 0.1 0.0 0.3 0.6 0.9 1 0.1 1.2 1 BASE-EMMITER VOLTAGE VBE (V) fT 10 REVERSE VOLTAGE —— IC 700 100 600 COLLECTOR POWER DISSIPATION PC (mW) 200 fT (MHz) 200 (mA) 100 TRANSITION FREQUENCY 200 100 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1000 VCE 8 10 COMMON EMITTER Ta=25℃ PC —— V 20 (V) Ta 500 400 300 200 100 VCE=10V 1 1 www.cj-elec.com 0 60 10 COLLECTOR CURRENT IC 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) ','HF,201 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 D,Oct,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 D,Oct,2015