JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCV47 TRANSISTOR (NPN) SOT–23 FEATURES High Collector Current High Current Gain MARKING:FG 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 10 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 10 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA hFE(1) VCE=1V, IC=100µA 2000 hFE(2) VCE=5V, IC=10mA 4000 hFE(3) VCE=5V, IC=100mA 10000 hFE(4) VCE=5V, IC=0.5A 2000 DC current gain Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=0.1mA 1 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=0.1mA 1.5 V Transition frequency Collector output capacitance www.cj-elec.com fT Cob VCE=5V,IC=50mA, f=100MHz 170 MHz VCB=10V, IE=0, f=1MHz 3.5 pF 1 B,Sep,2014 Typical Characteristics Static Characteristic 2.0uA 1.6uA 150 hFE (k) IC 200 VCE= 5V DC CURRENT GAIN COMMON EMITTER Ta=25℃ hFE —— IC 1000 4.0uA 3.6uA 3.2uA 2.8uA 2.4uA COLLECTOR CURRENT (mA) 250 1.2uA 100 o Ta=100 C 100 o Ta=25 C 0.8uA 50 IB=0.4uA 0 10 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCE 10 1 VBEsat —— IC 2.0 VCEsat —— 1200 β=1000 IC 100 500 100 500 (mA) IC β=1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 10 COLLECTOR CURRENT (V) 1.5 Ta=25℃ 1.0 Ta=100℃ 0.5 1 10 COLLECTOR CURRENT IC —— 500 IC 800 Ta=100℃ 600 Ta=25℃ 400 200 0 500 100 1000 1 (mA) 10 COLLECTOR CURRENT VBE Cob / Cib 15 —— IC (mA) VCB / VEB o Ta=25 C 12 C (pF) 400 300 CAPACITANCE COLLECTOR CURRENT IC (mA) f=1MHz IE=0 / IC=0 o Ta=100 C 200 Ta=25℃ 100 9 Cib 6 Cob 3 VCE=5V 0 0.4 0 0.6 0.8 1.0 1.2 1.4 BASE-EMITTER VOLTAGE Pc COLLECTOR POWER DISSIPATION Pc (mW) 300 —— 1.6 1.8 1 10 REVERSE VOLTAGE VBE(V) V (V) 20 Ta 200 100 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 B,Sep,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 6° SOT-23 Suggested Pad Layout www.cj-elec.com 3 B,Sep,2014 SOT-23 Tape and Reel www.cj-elec.com 4 B,Sep,2014