ACE7438M N-Channel 30-V MOSFET Description The ACE7438M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features • • • Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications • • • White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V VGS ±20 V Gate-Source Voltage O TA=25 C Continuous Drain Current a TA=70 C Pulse Drain Current b Continuous Drain Current (Diode Continuous) 22 ID O a IDM 80 IS 5.1 O Power Dissipation a TA=25 C TA=70 C A 5 PD O A 18 W 3.2 Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 Parameter Maximum Junction-to-Ambient a O C Symbol Maximum Units t≦10sec Steady State RθJA 25 ℃/W 65 ℃/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 ACE7438M N-Channel 30-V MOSFET Packaging Type DFN5*6-8L Ordering information ACE7438M PN + H Halogen - free Pb - free PN : DFN5*6-8L VER 1.1 2 ACE7438M N-Channel 30-V MOSFET Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. 1 Typ. Max. Unit Static Gate Source Threshold Voltage VGS(th) VDS=VGS, ID=250uA Gate Body Leakage IGSS VDS=0V, VGS=±20V ±100 Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1 VDS=24V, VGS=0V, TJ=55℃ 25 On-State Drain-Current a ID(on) Static Drain-Source On-Resistance a rDS(ON) Forward Transconductance a gfS VGS=15V,ID=15.2 A 30 S VSD IS= 2.6 A ,VGS=0V 0.72 V Diode Forward Voltage a VDS=5V, VGS=10V Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tf Turn-Off Delay Time td(off) Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 40 nA uA A VGS=10V,ID=15.2 A 7.5 VGS= 4.5 V,ID= 14.4 A 11.5 Dynamic Total Gate Charge V mΩ b VDS=15V,VGS=4.5V , ID=15.2A 21 nC 8.0 9.2 4 VDS=15V, ,RL=1Ω ID=15.2A,VGEN=10V RGEN=6Ω, 58 ns 54 31 VDS=15V, VGS=0V f=1MHz 1835 315 pF 303 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. VER 1.1 3 ACE7438M N-Channel 30-V MOSFET Typical Performance Characteristics ID-Drain Current (A) 1. On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage VDS - Drain-to-Source Voltage (V) 5. Output Characteristics VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage VDS-Drain-to-Source Voltage (V) 6. Capacitance VER 1.1 4 ACE7438M N-Channel 30-V MOSFET Typical Performance Characteristics Qg - Total Gate Charge (nC) 7. Gate Charge VDS Drain to Source Voltage (V) 9. Safe Operating Area TJ -JunctionTemperature(°C) 8. Normalized On-Resistance Vs Junction Temperature t1 TIME (SEC) 10. Single Pulse Maximum Power Dissipation t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient VER 1.1 5 ACE7438M N-Channel 30-V MOSFET Packing Information DFN5*6-8L SYMBOLS A A1 b c D D1 E E1 E2 e L L1 L2 θ DIMENSIONS IN MILLIMETERS MIN NOM MAX 0.85 0.95 1.00 0.00 0.05 0.30 0.40 0.50 0.15 0.20 0.25 5.20 BSC 4.35 BSC 5.55 BSC 6.05 BSC 3.62 BSC 1.27 BSC 0.45 0.55 0.65 0 0.15 0.68 REF O 0 10O DIENSIONS IN INCHES MIN NOM MAX 0.033 0.037 0.039 0.000 0.002 0.012 0.016 0.020 0.006 0.008 0.010 0.205 BSC 0.171 BSC 0.219 BSC 0.238 BSC 0.143 BSC 0.050 BSC 0.018 0.022 0.026 0 0.006 0.027 REF O 0 10O VER 1.1 6 ACE7438M N-Channel 30-V MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7