ACE4468B N-Channel Enhancement Mode MOSFET Description The ACE4468B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. -RoHS Compliant Features • • • • VDS (V)=30V ID=11.6A (VGS=10V) RDS(ON)<14mΩ (VGS=10V) RDS(ON)<22mΩ (VGS=4.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous)*AC TA=25℃ TA=70℃ Drain Current (Pulsed)*B Power Dissipation ID IDM TA=25℃ TA=70℃ Operating temperature / storage temperature PD 11.6 9.2 50 3 2 A A W TJ/TSTG -55~150 ℃ Packaging Type SOP-8 Ordering information ACE4468BFM + H Halogen - free Pb - free FM : SOP-8 VER 1.1 1 ACE4468B N-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Static Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=250µA Zero gate voltage drain current IDSS VDS=30V, VGS=0V Gate threshold voltage VGS(th) VGS=VDS, IDS=250µA Gate leakage current IGSS VGS=±20V, VDS=0V VGS=10V, ID=11.6A Drain-source on-state resistance RDS(ON) VGS=4.5V, ID=10A Forward transconductance gFS VDS=5V, ID=11.6A Diode forward voltage VSD ISD=1A, VGS=0V Maximum body-diode continuous current IS Switching Total gate charge Qg VGS=5V, VDS=15V, Gate-source charge Qgs ID=11.6A Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time tr VGS=10V, VDS=15V RL=15Ω, RGEN=6Ω Turn-off delay time td(off) Turn-off fall time Input capacitance Output capacitance Reverse transfer capacitance tf Dynamic Ciss VGS=0V, VDS=15V, Coss f=1.0MHz Crss Min Typ Max 30 1.4 1 3 100 14 22 1.9 11 15 19 0.74 Unit V µA V nA mΩ S V A 1.0 2.6 7.65 2.82 2.49 13.92 2.64 31.4 3.28 9.95 3.67 3.24 27.84 5.28 62.8 6.56 886.01 151 75.77 nC ns pF Note : A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.1 2 ACE4468B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VDS (Volts) On-Region Characteristics VGS (Volts) On-Region Characteristics ID(A) On-Resistance vs. Drain Current and Gate Gate Voltage Temperature (OC) On-Resistance vs. Junction Temperature VGS (Volts) On-Resistance vs. Gate-Source Voltage VSD (Volts) Body-Diode Characteristics VER 1.1 3 ACE4468B N-Channel Enhancement Mode MOSFET Typical Performance Characteristics Qg (nC) Gate-Charge Characteristics VDS (Volts) Maximum Forward Biased Safe Operating Area VDS (Volts) Capacitance Characteristics Pulse Width(s) Single Pulse Power Rating Junction-to-Ambient Pulse Width(s) Normalized Maximum Transient Thermal Impedance VER 1.1 4 ACE4468B N-Channel Enhancement Mode MOSFET Packing Information SOP-8 DIM MILLMETERS MIN NOM MAX A 1.35 1.55 1.75 A(1) 0.10 0.18 0.25 B 0.38 0.45 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E 3.80 3.90 4.00 e 1.27 BSC H 5.8 6.00 6.20 L 0.50 0.72 0.93 0 0 0 a 0 4 8 h 0.25 0.38 0.50 Unit: mm VER 1.1 5 ACE4468B N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6