ACE7331M P-Channel 30-V MOSFET Description The ACE7331M utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper lead frame DFN3x3-8L saves board space Fast switching speed High performance trench technology Absolute Maximum Ratings Continuous Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V TA=25℃ Drain Current a TA=70℃ ID -13.4 -11.0 A Pulsed Drain Current b IDM ±50 A Continuous Source Current (Diode Conduction) a IS -2.1 A TA=25℃ Power Dissipation a TA=70℃ Operating temperature / storage temperature PD 3.5 2.0 TJ/TSTG -55~150 W ℃ THERMAL RESISTANCE RATINGS Symbol Parameter Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA Maximum 35 81 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 ACE7331M P-Channel 30-V MOSFET Packaging Type DFN3*3-8L Ordering information ACE7331M NN + H Halogen - free Pb - free NN : DFN3*3-8L VER 1.1 2 ACE7331M P-Channel 30-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 uA Gate-Body Leakage IGSS VDS = 0 V, VGS = ±25 V ±100 Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 IDSS On-State Drain Current Drain-Source On-Resistance Diode Forward Voltage A A Min Typ Max Unit -1 V VDS = -24 V, VGS = 0 V, TJ = 55°C ID(on) A Forward Transconductance Test Conditions Static VDS = -5 V, VGS = -10 V RDS(ON) -5 -50 nA uA A VGS = -10 V, ID = -11.5 A 19 VGS = -4.5 V, ID =-9.3 A 30 mΩ gFS VDS =-15 V, ID = -11.5 A 29 S VSD IS = 2.5 A, VGS = 0 V -0.8 V Dynamic b Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 17 Turn-On Delay Time td(on) 15 Rise Time tr VDS = -15 V, RL = 6 Ω, 13 Turn-Off Delay Time td(off) ID = -1 A, VGEN = -10 V 100 Fall Time tf 25 VDS = -15 V, VGS = -5 V, ID =- 11.5 A 11 nC ns 54 Note : a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing VER 1.1 3 ACE7331M P-Channel 30-V MOSFET Typical Performance Characteristics VDS - Gate-to-Source Voltage (V) 1.On-Resistance Characteristics TJ –Junction Temperature(°C) 3. On-Resistance vs. Variation with Temperature VDS - Source to Drain Current (V) 5. Transfer Characteristics ID-Drain Current (A)ace 2. On-Resistance Variation with Drain Current and Gate Voltage VGS - Gate-to-Source Voltage (V) 4. On-Resistance vs with Gate to Source Voltage VGS- Gate to Source Voltage (V) 6.Body Diode Forward Voltage Variation with source Current and Temperature VER 1.1 4 ACE7331M P-Channel 30-V MOSFET Typical Performance Characteristics Qg - Total Gate Charge (nC) 7. Gate Charge Characteristics TJ –Junction Temperature (°C) 9. Maximum Safe Operating Area VDS (V) 8. Capacitance Characteristics Pulse TIME (S) 10.Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient Square Wave Pulse Duration (s) 11. Transient Thermal Response Curve VER 1.1 5 ACE7331M P-Channel 30-V MOSFET Packing Information DFN3*3-8L SYMBOLS A A1 b c D D1 E E1 E2 E3 e L L1 Θ1 DIMENSIONS IN MILLIMETERS MIN NOM MAX 0.700 0.80 0.900 0.00 0.05 0.24 0.30 0.35 0.10 0.152 0.25 3.00BSC 2.35BSC 3.20BSC 3.00BSC 1.75BSC 0.575BSC 0.65BSC 0.30 0.40 0.50 0 0.100 0° 10° 12° DIENSIONS IN INCHES MIN NOM MAX 0.0276 0.0315 0.0354 0.000 0.002 0.009 0.012 0.014 0.004 0.006 0.010 0.118BSC 0.093BSC 0.126BSC 0.118BSC 0.069BSC 0.023BSC 0.026BSC 0.0118 0.0157 0.0197 0 0.004 0° 10° 12° Unit: mm VER 1.1 6 ACE7331M P-Channel 30-V MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7