Training Module

2015 Super 12 Products
SiHP33N60EF / EF Series
High-Voltage MOSFETs
SiHP33N60EF / EF Series
HV Fast Body Diode Power MOSFET Offers up to 10x Reduction in Qrr
 Features:
• Based on E Series Super Junction technology
• Fast body diode provides as much as 10x reduction in Qrr over
the standard E Series MOSFET for lifetime control
• Designed and developed for soft-switching topologies along
with similar standard E Series on-resistance values
– Scales of economy can be achieved within a system using
EF Series throughout the design (in place of standard E
Series MOSFETs with similar on-resistance) in the hardswitched topology
• 600 V, 33 A maximum, RDS(on) max of 98 mΩ
• 28 A maximum, RDS(on) max of 123 mΩ option also available
(SiHx28N60EF)
• Package options include TO-220, TO-263 (D2PAK), and TO247AC
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SiHP33N60EF / EF Series
 Applications / Market Segments:
• Hard- and soft-switching (focus) topologies
― Zero voltage switching (ZVS) and LLC converters
• Applications
― Renewable energy: PV inverters
― Industrial: battery chargers
― Telecom: servers
― Computing: ATX / silver box SMPS
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Datasheet document number: 91592
Product page: www.vishay.com/ppg?91592
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SiHP33N60EF / EF Series
 Competition:
• Infineon: CoolMOS (CFD)
• ST: FDmesh II (Fast body diode MOSFETs)
• Fairchild: FRFET
• Toshiba: DTMOSIV (HSD)
 Why use SiHP33N60EF / EF Series?
• We offer similar on-resistance to our standard E Series
MOSFETs and can provide economies of scale where a
customer can use EF MOSFETs in hard-switched topologies as
well, and will achieve similar efficiency to using a standard E
Series MOSFET
• The competition sees 5 % to 7 % increase in on-resistance from
standard MOSFET to fast body diode MOSFET
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SiHP33N60EF / EF Series
 Contact:
• Philip Zuk ([email protected])
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