TO-126 Plastic-Encapsulate MOSFETS CJI02N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate MOSFETS
CJI02N60
N-Channel Power MOSFET
TO-126
General Description
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed
to withstand high energy in avalanche and commutation modes . The
new energy efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor controls ,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
1. GATE
2. DRAIN
3. SOURCE
FEATURES
z Robust High Voltage Termination
z Avalanche Energy Specified
z
Diode is Characterized for Use in Bridge Circuits
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Value
600
Unit
V
VGS
±20
Continuous Drain Current
ID
2
Pulsed Drain Current
IDM
4
Power Dissipation
PD
1.25
W
Single Pulsed Avalanche Energy*
EAS
128
mJ
Thermal Resistance, Junction-to-Ambient
R θJA
100
Junction Temperature
TJ
150
Storage Temperature
TSTG
-50 ~+150
TL
260
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
A
℃/W
℃
℃
*EAS condition: Tj=25℃,VDD=50V,L=64mH,IAS=2A,RG=25Ω
A-1,Sep,2013
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
Drain-source diode forward voltage(note2)
VSD
VGS = 0V, IS =2A
Zero gate voltage drain current
IDSS
VDS =600V, VGS =0V
Gate-body leakage current (n
IGSS
VDS =0V, VGS =±20V
600
1.6
V
0.25
µA
±100
nA
4.0
V
4.4
Ω
On characteristics (note2)
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
Static drain-source on-resistance
RDS(on)
VGS =10V, ID =1A
Forward Transconductance (note1)
gFS
VDS =50V, ID =1A
2.0
1
S
Dynamic characteristics (note 3)
435
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
9.2
td(on)
12
VDS =25V,VGS =0V,f =1MHz
56
pF
Switching characteristics (note 3)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
tf
VDD=300V, VGS=10V,
21
RG=18Ω, ID =2A
30
ns
24
Notes :
1.
2.
L=16mH, IL=5A, VDD=50V,,RG=25Ω,Starting TJ=25℃.
Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3.
These parameters have no way to verify.
A-1,Sep,2013