1N 4150 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the MiniMELF case with the type designation LL4150. Mechanical Data Case: DO-34, DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted.) Parameter Symbol Limit Unit Peak reverse voltage VRM 50 Volts Maximum average rectified current IF(AV) 200 mA Maximum power dissipation at Tamb=25oC Ptot 500 mW Maximum junction temperature TJ 175 o C Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Symbol Test Condition Min. Typ. Max. Unit Forward voltage drop VF IF=200mA - - 1.0 Volt Reverse current IR VR=50V - - 100 nA trr IF=IR=10mA to 200mA to 0.1IF - - 4.0 ns Reverse recovery time 618