1n4150

1N 4150
Small-Signal Diode
Fast Switching Diode
Features
Silicon Epitaxial Planar Diode
For general purpose and switching
This diode is also available in other case styles including the
MiniMELF case with the type designation LL4150.
Mechanical Data
Case: DO-34, DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(TA=25oC unless otherwise noted.)
Parameter
Symbol
Limit
Unit
Peak reverse voltage
VRM
50
Volts
Maximum average rectified current
IF(AV)
200
mA
Maximum power dissipation at Tamb=25oC
Ptot
500
mW
Maximum junction temperature
TJ
175
o
C
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage drop
VF
IF=200mA
-
-
1.0
Volt
Reverse current
IR
VR=50V
-
-
100
nA
trr
IF=IR=10mA to 200mA
to 0.1IF
-
-
4.0
ns
Reverse recovery time
618