1N 4151 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4151. Mechanical Data Case: DO-34, DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted.) Parameter Symbol Limit Unit Reverse voltage VR 50 Volts Peak reverse voltage VRM 75 Volts Average rectified current half wave rectification with resistive load at Tamb=25oC and f>50Hz (1) IF(AV) 150 mA Surge forward current at t<1s and Tj=25oC IFSM 500 mA Ptot 500 Power dissipation at Tamb=25oC (1) Thermal resistance junction to ambient air (1) mW o RθJA 350 Tj 175 o C -65 to +175 o C Junction temperature Storage temperature range TS C/W Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Reverse breakdown voltage Forward voltage Leakage current Capacitance Reverse recovery time Rectification efficiency Notes: Symbol Test Condition Min. Typ. Max. Unit V(BR)R IR=5uA (pulsed) 75 - - Volts VF IF=50mA - - 1.0 Volt IR VR=50V VR=50V, TJ=150OC - - 50 50 nA uA Ctot VF=VR=0V - - 2.0 pF - - 4.0 trr IF=10mA to IR=10mA to IR=1mA IF=10mA to IR=1mA VR=6V, RL=100Ω - - 2.0 0.45 - - ην ns f=100MHz, VRF=2V 1. Valid provided that leads at a distance of 8mm from case are kept at ambient temperature 619 - RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted) 620 RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted) 621