1N914 SMALL SIGNAL DIODE FEATURES DO-35 min. 1.083 (27.5) ♦ For general purpose and switching. max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) max. .150 (3.8) ♦ Silicon Epitaxial Planar Diode MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g max. ∅.020 (0.52) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOL VALUE UNIT VRM 100 V Io 75 mA Ptot 500 mW Maximum Junction Temperature Tj 200 °C Maximum Forward Voltage Drop at IF = 10 mA VF 1.0 V Maximum Reverse Current at VR = 20 V VR = 75 V IR 25 5.0 nA µA trr 4.0 ns Ctot 4.0 pF Peak Reverse Voltage Maximum Average Rectified Current Maximum Power Dissipation at Tamb = 25 °C Max. Reverse Recovery Time at IF = IR = 10 mA, VR = 6 V, RL = 100 Ω, to Irr = 1 mA Maximum Capacitance at VR=0, f=1.0 MHZ 11/09/98