SSS1004
100V N-Channel MOSFET
Main Product Characteristics
VDSS
100V
RDS(on)
3.4mΩ (typ.)
ID
180A
①
TO-220
Features and Benefits
Marking and Pin
Schematic Diagram
Assignment
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
180 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
130 ①
IDM
Pulsed Drain Current ②
670
Power Dissipation ③
375
W
Linear Derating Factor
2.5
W/°C
VDS
Drain-Source Voltage
100
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
1045
mJ
IAS
Avalanche Current @ L=0.3mH
83.5
A
-55 to +175
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.0
SSS1004
100V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case ③
—
0.4
°C/W
Junction-to-ambient (t ≤ 10s) ④
—
62
°C/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
°C/W
Electrical Characteristics @TA=25℃
unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source breakdown voltage
100
—
—
V
RDS(on)
Static Drain-to-Source on-resistance
—
3.4
4.0
—
7.7
—
VGS(th)
Gate threshold voltage
2.0
—
4.0
—
2.2
—
IDSS
Drain-to-Source leakage current
—
—
1
—
—
50
IGSS
Gate-to-Source forward leakage
—
—
100
—
—
-100
Qg
Total gate charge
—
224
—
Qgs
Gate-to-Source charge
—
80
—
Qgd
Gate-to-Drain("Miller") charge
—
55
—
VGS = 10V
td(on)
Turn-on delay time
—
40
—
VGS=10V, VDD =65V,
tr
Rise time
—
141
—
td(off)
Turn-Off delay time
—
95
—
tf
Fall time
—
101
—
ID =75A
Ciss
Input capacitance
—
5634
—
VGS = 0V
Coss
Output capacitance
—
657
—
Crss
Reverse transfer capacitance
—
12.6
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID= 1mA
VGS=10V,ID =75A
TJ = 125°C
VDS = VGS, ID =250μA
TJ = 125°C
VDS =120V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 50A,
nC
nS
pF
VDS=50V,
RL=0.87Ω,
RGEN=2.6Ω
VDS = 50V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
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Min.
Typ.
Max.
Units
—
—
180 ①
A
—
—
670
A
—
0.9
1.3
V
Page 2 of 7
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=75A, VGS=0V, TJ = 25°C
Rev.1.0
SSS1004
100V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 7
Rev.1.0
SSS1004
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
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Figure 4: Normalized On-Resistance Vs. Case
Temperature
Page 4 of 7
Rev.1.0
SSS1004
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
SSS1004
100V N-Channel MOSFET
Mechanical Data
TO-220 PACKAGE OUTLINE DIMENSION_GN
E
ФP
A
ϴ1
D
D2
ФP1
ϴ
ϴ2
D1
b1
b
A1
ϴ4
L
c
e
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
ϴ3
ϴ4
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Dimension In Millimeters
Min
Nom
Max
1.300
2.200
2.400
2.600
1.270
1.270
1.370
1.470
0.500
15.600
28.700
9.150
9.900
10.000
10.100
10.160
3.600
1.500
2.54BSC
12.900
13.100
13.300
0
7
0
7
30
0
3
Page 6 of 7
E
Dimension In Inches
Nom
Max
0.051
0.094
0.102
0.050
0.054
0.058
0.020
0.614
1.130
0.360
0.394
0.398
0.400
0.142
0.059
0.1BSC
0.508
0.516
0.524
0
7
0
7
Min
0.087
0.050
0.390
-
50
70
90
10
30
50
Rev.1.0
SSS1004
100V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSS1004
Package (Available)
TO-220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-220
50
20
1000
6000
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=125℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 7 of 7
Rev.1.0