SSF3324
30V N-Channel MOSFET
Main Product Characteristics
VDSS
30V
RDS(on) 26.5mohm(typ.)
ID
5.8A
①
SOT23
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Parameter
Max.
ID @ TC = 25°C
Symbol
Continuous Drain Current, VGS @ 10V
5.8 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
4.2 ①
IDM
Pulsed Drain Current ②
PD @TC = 25°C
Power Dissipation
VDS
Drain-Source Voltage
VGS
Gate-to-Source Voltage
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 8
Units
A
23
1.4
W
30
V
± 12
V
-55 to + 150
°C
Rev.1.1
SSF3324
30V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJA
Junction-to-ambient (t ≤ 10s) ③
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
RDS(on)
Static Drain-to-Source on-resistance
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
—
90
℃/W
unless otherwise specified
Min.
Typ.
Max.
Units
30
—
—
V
—
26.5
35
—
43.7
—
—
31.1
40
—
50.2
—
—
44.9
50
—
62.1
—
0.7
—
1.4
—
0.63
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
10
—
Qgs
Gate-to-Source charge
—
2
—
Qgd
Gate-to-Drain("Miller") charge
—
3
—
td(on)
Turn-on delay time
—
3
—
tr
Rise time
—
5
—
td(off)
Turn-Off delay time
—
26
—
tf
Fall time
—
4
—
Ciss
Input capacitance
—
1245
—
Coss
Output capacitance
—
85
—
Crss
Reverse transfer capacitance
—
70
—
mΩ
Conditions
VGS = 0V, ID = 250μA
VGS=4.5V,ID = 2A
TJ = 125℃
mΩ
VGS=2.5V,ID=1.5A
TJ = 125℃
mΩ
VGS=1.8V,ID=1A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
nA
VDS = 24V,VGS = 0V
TJ = 125°C
VGS =12V
VGS = -12V
ID = 5.8A,
nC
VDS=15V,
VGS = 4.5V
ns
VGS=10V, VDS =15V,
RGEN=3Ω，
VGS = 0V,
pF
VDS =15V,
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
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Min.
Typ.
Max.
Units
—
—
5.8 ①
A
—
—
23
A
—
0.72
1.2
V
Page 2 of 8
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=1A, VGS=0V
Rev.1.1
SSF3324
30V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max junction temperature.
③The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
④These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
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Page 3 of 8
Rev.1.1
SSF3324
30V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1: Typical Output Characteristics
Figure 2. Typical Transfer Characteristics
Figure 3. Gate to source cut-off voltage
Figure 4: Drain-to-Source Breakdown Voltage vs.
Temperature
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Page 4 of 8
Rev.1.1
SSF3324
30V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Normalized On-Resistance Vs. Case
Figure 6. Maximum Drain Current Vs. Case
Temperature
Temperature
Figure 7. Typical Capacitance Vs. Drain-to-Source
Voltage
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Page 5 of 8
Rev.1.1
SSF3324
30V N-Channel MOSFET
Figure8. Normalized Maximum Transient Thermal Impedance
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Page 6 of 8
Rev.1.1
SSF3324
30V N-Channel MOSFET
Mechanical Data
SOT-23 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
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Dimension In M illimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.95TYP
1.800
2.000
0.55REF
0.300
0.500
00
80
Page 7 of 8
Dimension In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037TYP
0.071
0.079
0.022REF
0.012
0.020
00
80
Rev.1.1
SSF3324
30V N-Channel MOSFET
Ordering and Marking Information
Device Marking: 3324
Package (Available)
SOT23
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tubes/Inner
Type
Tube Box
SOT23
3000
10
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner
Box
30000
Inner
Units/Carton
Boxes/Carton Box
Box
4
120000
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 8 of 8
Rev.1.1