SSF3615 30V P-Channel MOSFET D DESCRIPTION The SSF3615 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS =- 30V,ID =-10A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 14mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF3615 SSF3615 SOP-8 Ø330mm 12mm 2500 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±25 V ID(25℃) -8 A ID(70℃) -6 A IDM -80 A PD 3.1 W TJ,TSTG -55 To 150 ℃ R θJA 40 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage www.goodark.com BV DSS VGS=0V ID=-250μA Page 1 of 6 -30 V Rev.2.1 SSF3615 30V P-Channel MOSFET Zero Gate Voltage Drain Current IDSS V DS=-30V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±25V,V DS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -2.2 -3 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-7.5A 20 25 mΩ VGS=-10V, ID=-10A 12 14 mΩ VDS=-5V,ID=-10A 18 S 1200 PF 240 PF ON CHARACTERISTICS (Note 3) Forward Transconductance g FS -1.7 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss V DS=-15V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance C rss 150 PF Turn-on Delay Time td(on) 9 nS Turn-on Rise Time tr 8.5 nS 20 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDS=-15V,V GS=-10V,RGEN=3Ω ID=1A Turn-Off Fall Time tf 8 nS Total Gate Charge Qg 18 nC Gate-Source Charge Q gs 5 nC Gate-Drain Charge Q gd 3.5 nC Body Diode Reverse Recovery Time T rr 24 nS Body Diode Reverse Recovery Charge Qrr 12 nC VDS=-15V,ID=-10A,V GS=-10V IF=-10A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD VGS=0V,IS=-1A -0.74 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 6 Rev.2.1 SSF3615 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) -ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation -ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current -ID- Drain Current (A) -Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS www.goodark.com Figure 6 Drain-Source On-Resistance Page 3 of 6 Rev.2.1 SSF3615 -ID- Drain Current (A) Normalized On-Resistance 30V P-Channel MOSFET -Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics -Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds -Is- Reverse Drain Current (A) -Vgs Gate-Source Voltage (V) -Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge www.goodark.com -Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward Page 4 of 6 Rev.2.1 SSF3615 -ID- Drain Current (A) 30V P-Channel MOSFET Vds Drain-Source Voltage (V) Safe Operation Area Z thJA Normalized Transient Thermal Resistance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 5 of 6 Rev.2.1 SSF3615 30V P-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 6 of 6 Rev.2.1