SSF4414 30V N-Channel MOSFET D DESCRIPTION The SSF4414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● V DS = 30V,ID = 8.5A R DS(ON) < 40mΩ @ VGS=4.5V R DS(ON) < 26mΩ @ VGS=10V ● High Power and current handling capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF4414 SSF4414 SOP-8 Ø330mm 12mm 2500 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V ID(25℃) 8.5 A ID(70℃) 7 A IDM 50 A PD 3 W TJ,TSTG -55 To 150 ℃ R θJA 40 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA www.goodark.com Page 1 of 4 30 V Rev.1.2 SSF4414 30V N-Channel MOSFET ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) V DS=VGS,ID=250μA Drain-Source On-State Resistance RDS(ON) Forward Transconductance g FS 1.9 3 V VGS=4.5V, ID=5A 31 40 mΩ VGS=10V, ID=8.5A 20 26 mΩ V DS=5V,ID=5A 1 4 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss Output Capacitance C oss Reverse Transfer Capacitance 680 V DS=15V,VGS=0V, F=1.0MHz 820 PF 100 PF C rss 75 PF Turn-on Delay Time td(on) 4.5 6.5 nS Turn-on Rise Time tr 4.2 6.3 nS 20 30 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDS=15V,VGS=10V,RGEN=3Ω RL=1.8Ω td(off) Turn-Off Fall Time tf 4.9 7.5 nS Total Gate Charge Qg 13.8 17 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd Body Diode Reverse Recovery Time Trr IF=8.5A, dI/dt=100A/µs 17.2 21 nS Body Diode Reverse Recovery Charge Qrr IF=8.5A, dI/dt=100A/µs 8.6 10 nC 0.76 1 V VDS=15V,ID=8.5A,VGS=10V 1.8 nC 3.3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD VGS=0V,IS=1A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.2 SSF4414 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rl Vin Vgs Rgen D Vout G S Figure 1: Switching Test Circuit ZthJA Normalized Transient Thermal Resistance Figure 2:Switching Waveforms Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.2 SSF4414 30V N-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.2