SSF9435 30V P-Channel MOSFET D DESCRIPTION The SSF9435 uses advanced trench technology to provide excellent R DS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). G S Schematic Diagram GENERAL FEATURES ● V DS = -30V,ID = -5.3A R DS(ON) < 85mΩ @ VGS=-4.5V R DS(ON) < 53mΩ @ VGS=-10V D D D 8 7 D 6 5 9435 ● High Power and current handing capability ● Lead free product ● Surface Mount Package 3 4 1 2 S S S G Marking and Pin Assignment APPLICATIONS ●Battery protection ●Load switch ●Power management SOP-8 Top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 9435 SSF9435 SOP-8 Tape Width Quantity 12mm 2500 units Ø330mm ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V ID -5.3 A IDM -20 A PD 2.5 W TJ,TSTG -55 To 150 ℃ R θJA 50 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS=0V ID=-250μA -30 V Zero Gate Voltage Drain Current IDSS V DS=-24V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±20V,V DS=0V ±100 nA ON CHARACTERISTICS (Note 3) www.goodark.com Page 1 of 6 Rev.2.0 SSF9435 30V P-Channel MOSFET Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance VDS=VGS,ID=-250μA g FS -1 -3 VGS=-10V, ID=-5.3A 46 53 VGS=-4.5V, ID=-4.2A 70 85 V DS=-15V,ID=-4.5A 4 V mΩ 7 S 1040 PF 420 PF PF DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss V DS=-15V,VGS=0V, F=1.0MHz Output Capacitance C oss Reverse Transfer Capacitance C rss 150 Turn-on Delay Time td(on) 19 26 nS Turn-on Rise Time tr 9 13 nS 74 105 nS 50 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time V DD=-15V, ID=-1A, VGS=-10V,RGEN=6Ω td(off) Turn-Off Fall Time tf 36 Total Gate Charge Qg 12 nC Gate-Source Charge Qgs 2 nC Gate-Drain Charge Q gd 3 nC VDS=-15V,ID=-5.3A,VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD Diode Forward Current (Note 2) IS VGS=0V,IS=-1.7A -1.2 V -1.9 A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 6 Rev.2.0 SSF9435 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) -ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation -ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 4 Drain Current -ID- Drain Current (A) -Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS www.goodark.com Figure 6 Drain-Source On-Resistance Page 3 of 6 Rev.2.0 SSF9435 -ID- Drain Current (A) Normalized On-Resistance 30V P-Channel MOSFET -Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics -Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds -Is- Reverse Drain Current (A) -Vgs Gate-Source Voltage (V) -Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge www.goodark.com -Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward Page 4 of 6 Rev.2.0 SSF9435 -ID- Drain Current (A) 30V P-Channel MOSFET Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 5 of 6 Rev.2.0 SSF9435 30V P-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 6 of 6 Rev.2.0