SSF2641S 20V P-Channel MOSFET D DESCRIPTION The SSF2641S uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings. G S Schematic Diagram GENERAL FEATURES ●V DS = -20V,ID = -7.9A RDS(ON) < 70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V ● High Power and current handling capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●Battery protection ●Load switch ●Power management SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF2641S SSF2641S SOP-8 Ø330mm 8mm 2500 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±12 V ID -7.9 A IDM -30 A PD 5 W TJ,TSTG -55 To 150 ℃ R θJA 85 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 4 Rev.1.0 SSF2641S 20V P-Channel MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 V Zero Gate Voltage Drain Current IDSS V DS=-20V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V ±100 nA VGS(th) VDS=VGS, ID =-250μA -0.75 -0.95 V VGS=-4.5V, ID =-2.8A 40 50 VGS=-2.5V, ID =-2.3A 56 70 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance R DS(ON) -0.55 mΩ DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-20V,VGS=0V, F=1.0MHz 1000 PF 150 PF Output Capacitance Coss Reverse Transfer Capacitance Crss 100 PF Turn-on Delay Time td(on) 8 nS Turn-on Rise Time tr 7 nS 80 nS 35 nS 10 nC 2.2 nC 1.3 nC SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time V DD=-10V, ID =-1A VGS=-4.5V,RGEN=6Ω td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V, ID=-4.7A,VGS=-4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1.7A -0.8 -1.2 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 V SSF2641S 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms R(t),Normalized Effective Transient Thermal Impedance Figure 1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF2641S 20V P-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0