SSF2649 20V Dual P-Channel MOSFET DESCRIPTION The SSF2649 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings. Schematic Diagram GENERAL FEATURES ●V DS = -20V,ID = -2.9A RDS(ON) < 98mΩ @ VGS=-2.5V RDS(ON) < 58mΩ @ VGS=-4.5V ● High Power and current handling capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●Battery protection ●Load switch ●Power management SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF2649 SSF2649 SOP-8 - - - ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±12 V ID -7.9 A IDM -30 A PD 5 W TJ,TSTG -55 To 150 ℃ R θJA 85 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS V DS=-20V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V ±100 nA www.goodark.com Page 1 of 4 -20 V Rev.1.0 SSF2649 20V Dual P-Channel MOSFET ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance VGS(th) R DS(ON) VDS=VGS, ID =-250μA -0.7 -3.0 VGS=-4.5V, ID =-2.9A 49 58 VGS=-2.7V, ID =-1.5A 82 98 V mΩ DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-20V,VGS=0V, F=1.0MHz 1040 PF 156 PF Output Capacitance Coss Reverse Transfer Capacitance Crss 112 PF Turn-on Delay Time td(on) 9 nS Turn-on Rise Time tr 8 nS 87 nS 38 nS 12 nC 2.7 nC 1.5 nC SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd V DD=-10V, ID =-1A VGS=-4.5V,RGEN=6Ω VDS=-10V, ID=-4.7A,VGS=-4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-2.9A -1.0 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 V SSF2649 20V Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Figure 2:Switching Waveforms R(t),Normalized Effective Transient Thermal Impedance Figure 1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF2649 20V Dual P-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0