SSF3637 30V Dual P-Channel MOSFET DESCRIPTION D1 The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). D2 G1 G2 S1 S2 Schematic Diagram GENERAL FEATURES ●V DS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●Battery protection ●Load switch ●Power management SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF3637 SSF3637 SOP-8 Ø330mm 12mm 2500 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V ID -5 A IDM -20 A PD 2.0 W TJ,TSTG -55 To 150 ℃ R θJA 62.5 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS V DS=-24V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA www.goodark.com Page 1 of 4 -30 V Rev.1.0 SSF3637 30V Dual P-Channel MOSFET ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VGS(th) VDS=VGS, ID =-250μA R DS(ON) gFS -1 -1.8 -3 V VGS=-10V, ID =-5A 39 52 VGS=-4.5V, ID =-4A 67 87 VDS=-5V, ID =-5A 8 S 700 PF 120 PF mΩ DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-15V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 75 PF Turn-on Delay Time td(on) 9 nS Turn-on Rise Time tr 5 nS 30 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time V DD=-15V, ID =-1A VGS=-10V,RGEN=6Ω td(off) Turn-Off Fall Time tf 15 nS Total Gate Charge Qg 14.7 nC Gate-Source Charge Qgs 2 nC Gate-Drain Charge Qgd 3.8 nC VDS=-15V, ID=-5A,VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A -0.8 -1 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 V SSF3637 30V Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr Vdd td(on) Rl Vin Vgs Rgen D 90% Vout VOUT G toff tf td(off) 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedan www.goodark.com Page 3 of 4 Rev.1.0 SSF3637 30V Dual P-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0